STB30NF10T4 Equivalent & Substitute Parts

Part Overview

The STB30NF10T4 is an N-Channel 100V 35A MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This surface mount device is packaged in D2PAK (TO-263-3) configuration and is rated for 115W power dissipation at case temperature. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity level.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are maintained across the critical parameters that define MOSFET functionality in switching and linear applications. The substitute parts listed maintain the same drain-source voltage rating, similar continuous drain current capability, compatible gate drive characteristics, and identical D2PAK packaging.

Key Parameters

Parameter	STB30NF10T4 Value	Unit	Substitution Relevance
Drain to Source Voltage (Vdss)	100	V	Critical - must match or exceed
Continuous Drain Current (Id) @ 25°C	35	A (Tc)	Critical - substitutes must support equal or greater current
Rds On (Max) @ 15A, 10V	45	mOhm	Important - lower values indicate better performance
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V	Important - affects gate drive requirements
Power Dissipation (Max)	115	W (Tc)	Important - thermal capability indicator
Mounting Type	Surface Mount	-	Critical - must be surface mount
Package / Case	TO-263-3, D2PAK	-	Critical - physical compatibility requirement
Operating Temperature Range	-55 to 175	°C (TJ)	Important - thermal operating window

Substitute Part Grouping Explanation

Substitution logic for the STB30NF10T4 is based on the following criteria:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 100V
Mounting Type: Surface Mount
Package Type: D2PAK (TO-263-3)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Performance Parameters (Equal or Better):

Continuous Drain Current (Id) @ 25°C: 35A or greater
Operating Temperature Range: -55°C to 175°C or wider
Gate Threshold Voltage (Vgs(th)): 4V or lower for equivalent gate drive compatibility

Acceptable Variation Parameters:

Rds On (Max): Lower values are acceptable and indicate improved performance
Power Dissipation (Max): Equal or greater values are acceptable
Gate Charge (Qg): Variation acceptable within application requirements
Input Capacitance (Ciss): Variation acceptable within application requirements

All substitute parts listed maintain 100V Vdss rating, D2PAK surface mount packaging, and support continuous drain currents equal to or exceeding 35A at 25°C case temperature.

Parameter Comparison

Parameter	STB30NF10T4	BUK9640-100A,118	FDB3682	FQB44N10TM	HUF75631S3ST	IRF1310NSTRLPBF	IRF540NSTRLPBF	IRL540NSTRLPBF	Unit
Manufacturer	STMicroelectronics	Nexperia USA Inc.	onsemi	onsemi	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	-
Vdss	100	100	100	100	100	100	100	100	V
Id @ 25°C (Tc)	35	39	32	43.5	33	42	33	36	A
Rds On (Max) @ 10V	45 @ 15A	39 @ 25A	36 @ 32A	39 @ 21.75A	40 @ 33A	36 @ 22A	44 @ 16A	44 @ 18A	mOhm
Vgs(th) @ Id	4 @ 250µA	2 @ 1mA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	2 @ 250µA	V
Gate Charge (Qg) @ Vgs	55 @ 10V	48 @ 5V	28 @ 10V	62 @ 10V	79 @ 20V	110 @ 10V	71 @ 10V	74 @ 5V	nC
Power Dissipation (Max)	115	158	95	146	120	160	130	140	W (Tc)
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
Product Status	Active	Active	Active	Active	Active	Active	Active	Active	-

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

IRL540NSTRLPBF (Infineon Technologies) - Continuous drain current of 36A at 25°C case temperature exceeds the STB30NF10T4 requirement of 35A. Rds On of 44mOhm at 18A, 10V is comparable. Gate threshold voltage of 2V at 250µA provides improved gate drive margin. Power dissipation of 140W exceeds the original 115W. All electrical parameters support direct substitution. Active product status with RoHS3 compliance and REACH Unaffected status.

IRF1310NSTRLPBF (Infineon Technologies) - Continuous drain current of 42A at 25°C case temperature significantly exceeds the 35A requirement. Rds On of 36mOhm at 22A, 10V provides superior performance. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 160W exceeds the original 115W. Active product status with RoHS3 compliance and REACH Unaffected status.

BUK9640-100A,118 (Nexperia USA Inc.) - Continuous drain current of 39A at 25°C case temperature exceeds the 35A requirement. Rds On of 39mOhm at 25A, 10V provides improved performance. Gate threshold voltage of 2V at 1mA provides enhanced gate drive characteristics. Power dissipation of 158W exceeds the original 115W. Active product status with RoHS3 compliance, REACH Unaffected status, and AEC-Q101 automotive qualification.

Secondary Substitutes (Acceptable Compatibility):

FQB44N10TM (onsemi) - Continuous drain current of 43.5A at 25°C case temperature significantly exceeds the 35A requirement. Rds On of 39mOhm at 21.75A, 10V provides superior performance. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 146W exceeds the original 115W. Active product status with RoHS3 compliance and REACH Unaffected status.

HUF75631S3ST (onsemi) - Continuous drain current of 33A at 25°C case temperature is slightly below the 35A requirement but remains within acceptable operating range for many applications. Rds On of 40mOhm at 33A, 10V is comparable. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 120W exceeds the original 115W. Active product status with RoHS3 compliance and REACH Unaffected status.

IRF540NSTRLPBF (Infineon Technologies) - Continuous drain current of 33A at 25°C case temperature is slightly below the 35A requirement. Rds On of 44mOhm at 16A, 10V is comparable. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 130W exceeds the original 115W. Active product status with RoHS3 compliance and REACH Unaffected status.

Tertiary Substitutes (Limited Compatibility):

FDB3682 (onsemi) - Continuous drain current of 32A at 25°C case temperature is below the 35A requirement. Rds On of 36mOhm at 32A, 10V provides superior performance. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 95W is below the original 115W. Active product status with RoHS3 compliance and REACH Unaffected status. Suitable only for applications with reduced current requirements.

IRF540SPBF and IRF540STRLPBF (Vishay Siliconix) - Continuous drain current of 28A at 25°C case temperature is significantly below the 35A requirement. Rds On of 77mOhm at 17A, 10V is higher than the original specification. Gate threshold voltage of 4V at 250µA matches the original specification. Power dissipation of 150W exceeds the original 115W. Active product status with RoHS3 compliance. IRF540SPBF has REACH Affected status; IRF540STRLPBF has REACH Affected status. Suitable only for applications with significantly reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can I substitute the STB30NF10T4 with any of the listed parts without circuit modification?

A: Direct substitution is possible for parts with equal or greater continuous drain current ratings at 25°C case temperature and identical D2PAK packaging. IRL540NSTRLPBF, IRF1310NSTRLPBF, BUK9640-100A,118, and FQB44N10TM are fully compatible without modification. Parts with lower current ratings (FDB3682, HUF75631S3ST, IRF540NSTRLPBF, IRF540SPBF, IRF540STRLPBF) require application review to confirm current requirements do not exceed the substitute part rating.

Q: What is the significance of the gate threshold voltage (Vgs(th)) difference between parts?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. The STB30NF10T4 has a Vgs(th) of 4V at 250µA. Substitute parts with lower Vgs(th) values (such as 2V) require less gate drive voltage and may provide faster switching response. Substitute parts with matching 4V Vgs(th) maintain identical gate drive requirements. Lower threshold voltage parts are generally preferred for improved performance.

Q: Are all substitute parts available in the same packaging?

A: Yes, all substitute parts listed are packaged in D2PAK (TO-263-3) surface mount configuration, which is mechanically and electrically compatible with the STB30NF10T4. Packaging variants (Cut Tape, Tape & Reel, Tube) differ only in delivery format and do not affect electrical performance or PCB compatibility.

Q: What does RoHS3 compliance mean for substitution?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements and contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. All substitute parts listed are RoHS3 compliant, ensuring environmental and regulatory compatibility with the original STB30NF10T4.

Q: How does Rds On (on-resistance) affect part selection?

A: Rds On determines the voltage drop across the MOSFET when conducting current. Lower Rds On values result in reduced power dissipation and heat generation. The STB30NF10T4 has Rds On of 45mOhm at 15A, 10V. Substitute parts with lower Rds On values (such as 36-39mOhm) provide improved efficiency. Higher Rds On values increase power dissipation and may require enhanced thermal management.

Q: What is the importance of power dissipation rating in substitution?

A: Power dissipation rating indicates the maximum heat the MOSFET can safely dissipate at case temperature. The STB30NF10T4 is rated for 115W at case temperature. Substitute parts with equal or higher power dissipation ratings (such as 140W, 158W, 160W) provide equal or improved thermal capability. Parts with lower power dissipation ratings (such as 95W) may require enhanced cooling or reduced operating current.

Q: Can I use a substitute part with higher continuous drain current rating?

A: Yes. Substitute parts with higher continuous drain current ratings (such as 39A, 42A, 43.5A) are fully compatible and provide improved current handling capability. The circuit will operate safely as long as the gate drive voltage and other electrical parameters remain within specification. Higher current-rated parts do not negatively affect circuit operation.

Q: What is the difference between Tc and Ta temperature ratings?

A: Tc refers to case temperature, while Ta refers to ambient temperature. Continuous drain current and power dissipation specifications are typically given at Tc (case temperature). The STB30NF10T4 is rated for 35A at Tc. Some substitute parts list both Tc and Ta ratings. Tc ratings are more conservative and represent the actual junction temperature condition.

Q: Are there any compliance or certification differences between substitute parts?

A: All substitute parts are RoHS3 compliant and have Active product status. BUK9640-100A,118 includes AEC-Q101 automotive qualification, indicating suitability for automotive applications. IRF540SPBF and IRF540STRLPBF have REACH Affected status, while all other parts have REACH Unaffected status. These differences do not affect electrical compatibility but may be relevant for specific application requirements or supply chain restrictions.

Q: What is the moisture sensitivity level (MSL) and why does it matter?

A: Moisture Sensitivity Level (MSL) indicates the component's susceptibility to moisture damage during storage and handling. All listed parts have MSL 1 (Unlimited), meaning they have unlimited shelf life and require no special moisture control during storage or handling. This ensures consistent reliability regardless of storage conditions.

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