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STB2N62K3 Equivalent & Substitute Parts
Part Overview
The STB2N62K3 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 620V drain-to-source voltage with 2.2A continuous drain current. The device is housed in a TO-263 (D2PAK) surface mount package and is part of the SuperMESH3™ series. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 620 | V |
| Continuous Drain Current (Id) @ 25°C | 2.2 | A (Tc) |
| On-State Resistance (Rds On) @ 1.1A, 10V | 3.6 | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ 50µA | 4.5 | V |
| Gate Charge (Qg) @ 10V | 15 | nC |
| Power Dissipation (Max) | 45 | W (Tc) |
| Operating Temperature (TJ) | 150 | °C |
| Package Type | TO-263 (D2PAK) | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the STB2N62K3 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss) must equal or exceed 620V
- Continuous Drain Current (Id) must equal or exceed 2.2A
- On-State Resistance (Rds On) must not exceed 3.6Ohm at specified gate voltage
- Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
- Power Dissipation capability must support 45W (Tc) operation
- Operating Temperature range must support 150°C (TJ)
Mechanical Compatibility Criteria:
- Package type must be TO-263 (D2PAK) or equivalent surface mount configuration
- Pin configuration must match 2 Leads + Tab standard
- Mounting type must be Surface Mount
Compliance Requirements:
- RoHS3 Compliant status
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
The substitute parts identified below meet these criteria within the allowed parameter tolerances for this MOSFET category.
Parameter Comparison
| Parameter | STB2N62K3 | STD2N62K3 | IRFBC20SPBF | IRFBC20STRLPBF |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | Vishay Siliconix | Vishay Siliconix |
| Vdss (V) | 620 | 620 | 600 | 600 |
| Id @ 25°C (A) | 2.2 | 2.2 | 2.2 | 2.2 |
| Rds On (Ohm) | 3.6 @ 1.1A, 10V | 3.6 @ 1.1A, 10V | 4.4 @ 1.3A, 10V | 4.4 @ 1.3A, 10V |
| Vgs(th) (V) | 4.5 @ 50µA | 4.5 @ 50µA | 4.0 @ 250µA | 4.0 @ 250µA |
| Gate Charge Qg (nC) | 15 @ 10V | 15 @ 10V | 18 @ 10V | 18 @ 10V |
| Power Dissipation (W) | 45 (Tc) | 45 (Tc) | 50 (Tc) | 50 (Tc) |
| Operating Temperature (°C) | 150 | 150 | -55 to 150 | -55 to 150 |
| Package | TO-263 (D2PAK) | DPAK (TO-252) | TO-263 (D2PAK) | TO-263 (D2PAK) |
| Product Status | Obsolete | Active | Active | Active |
| RoHS3 Compliant | Yes | Yes | Yes | Yes |
Engineering Selection Recommendations
STD2N62K3 (STMicroelectronics)
The STD2N62K3 is the primary substitute for the obsolete STB2N62K3. Both devices are manufactured by STMicroelectronics and share identical electrical specifications, including 620V Vdss, 2.2A continuous drain current, and 3.6Ohm Rds On. The STD2N62K3 is currently in active production status with higher inventory availability (8600 Pcs). The primary difference is the package configuration: STD2N62K3 uses DPAK (TO-252) versus the original TO-263 (D2PAK). This package difference requires PCB layout modification. The STD2N62K3 maintains full RoHS3 compliance and MSL 1 rating.
IRFBC20SPBF and IRFBC20STRLPBF (Vishay Siliconix)
Both Vishay Siliconix devices (IRFBC20SPBF in Tube packaging and IRFBC20STRLPBF in Tape & Reel packaging) are functionally equivalent substitutes with the same TO-263 (D2PAK) package as the original STB2N62K3. These devices maintain 2.2A continuous drain current and support the same surface mount configuration. The Vishay parts operate at 600V Vdss (20V lower than the original specification) and exhibit slightly higher Rds On (4.4Ohm versus 3.6Ohm). Both devices are in active production status with RoHS3 compliance and MSL 1 rating. The extended operating temperature range (-55°C to 150°C) provides additional thermal margin compared to the original part.
Selection Basis:
- All substitute parts maintain N-Channel MOSFET technology and surface mount configuration
- All substitutes are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating
- Product status prioritizes active production parts over obsolete designs
- Package compatibility with original PCB layout is a primary consideration
- Electrical parameter derating (Vdss 600V vs. 620V, Rds On 4.4Ohm vs. 3.6Ohm) must be evaluated against circuit margin requirements
Frequently Asked Questions (FAQ)
Q: Can STD2N62K3 be used as a direct replacement for STB2N62K3 without PCB modification?
A: No. While the electrical specifications are identical, the package differs: STD2N62K3 uses DPAK (TO-252) while STB2N62K3 uses TO-263 (D2PAK). These packages have different pin layouts and footprints, requiring PCB redesign.
Q: What is the key difference between IRFBC20SPBF and IRFBC20STRLPBF?
A: Both devices are electrically identical. The difference is packaging format: IRFBC20SPBF is supplied in Tube packaging, while IRFBC20STRLPBF is supplied in Tape & Reel (TR) format. Selection depends on procurement and assembly requirements.
Q: Are the Vishay IRFBC20 devices suitable replacements if the circuit operates below 600V?
A: Yes. The IRFBC20SPBF and IRFBC20STRLPBF are rated for 600V Vdss, which is 20V lower than the original STB2N62K3 (620V). These devices are suitable for applications operating below 600V. Circuit margin analysis is required for applications near the 600V threshold.
Q: How do the on-state resistance values compare between substitutes?
A: The STB2N62K3 and STD2N62K3 both specify 3.6Ohm Rds On at 1.1A and 10V gate voltage. The Vishay IRFBC20 devices specify 4.4Ohm Rds On at 1.3A and 10V gate voltage. The higher Rds On in Vishay parts results in increased power dissipation and heat generation. Circuit thermal analysis is required to confirm acceptability.
Q: Do all substitute parts maintain the same gate charge characteristics?
A: No. The STB2N62K3 and STD2N62K3 specify 15nC gate charge at 10V. The Vishay IRFBC20 devices specify 18nC gate charge at 10V. Higher gate charge increases driver current requirements and switching losses. Gate driver capability must be verified for Vishay substitutes.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. STD2N62K3, IRFBC20SPBF, and IRFBC20STRLPBF are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original STB2N62K3 compliance status.
Q: What is the operating temperature range for each substitute?
A: STB2N62K3 and STD2N62K3 are rated to 150°C (TJ). IRFBC20SPBF and IRFBC20STRLPBF support an extended range of -55°C to 150°C (TJ), providing additional low-temperature capability.
Q: Which substitute offers the best inventory availability?
A: STD2N62K3 has the highest inventory availability at 8600 Pcs. IRFBC20SPBF has 2400 Pcs and IRFBC20STRLPBF has 1524 Pcs available.
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