STB200NF04T4 Equivalent & Substitute Parts

Part Overview

The STB200NF04T4 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device operates at 40V drain-to-source voltage with a continuous drain current rating of 120A at 25°C and maximum power dissipation of 310W. The component is housed in a D2PAK (TO-263-3) surface mount package with two leads plus tab configuration.

The STB200NF04T4 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades where the original part is no longer procurable.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 90A, 10V	3.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Maximum Gate Voltage (Vgs)	±20	V
Gate Charge (Qg) @ 10V	210	nC
Input Capacitance (Ciss) @ 25V	5100	pF
Power Dissipation (Max)	310	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STB200NF04T4 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 40V (exact match required)
Continuous Drain Current (Id) @ 25°C: 120A minimum (Tc rating)
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C (TJ)
FET Type: N-Channel MOSFET (Metal Oxide)
Gate Voltage Rating (Vgs): ±20V compatible
RoHS3 Compliance and MSL Level 1

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Acceptable range 1.5 to 4.0 mOhm @ 10V
Gate Charge (Qg): Acceptable range 64 to 346 nC @ 10V
Input Capacitance (Ciss): Acceptable range 3510 to 28000 pF @ 20-25V
Power Dissipation: Minimum 200W (Tc)

Substitute parts must satisfy all critical matching parameters. Secondary parameters may vary within the specified ranges without affecting functional compatibility in standard switching applications. Parts with lower continuous drain current ratings, different package configurations, or incompatible voltage ratings are excluded from substitution consideration.

Parameter Comparison

Parameter	STB200NF04T4	AOB240L	BUK964R4-40B,118	DMTH4004SCTB-13	IPB015N04NGATMA1	IRF1404STRLPBF	IRF1404ZSTRLPBF	IRF2804STRL7PP	IRF2804STRLPBF
Vdss (V)	40	40	40	40	40	40	40	40	40
Id @ 25°C (A, Tc)	120	105	75	100	120	162	180	160	75
Rds On (mOhm) @ 10V	3.7 @ 90A	2.6 @ 20A	4 @ 25A	3 @ 100A	1.5 @ 100A	4 @ 95A	3.7 @ 75A	1.6 @ 160A	2 @ 75A
Vgs(th) (V) @ 250µA	4	2.2	2	4	4	4	4	4	4
Qg (nC) @ 10V	210	72	64	68.6	250	200	150	260	240
Ciss (pF) @ 20-25V	5100 @ 25V	3510 @ 20V	7124 @ 25V	4305 @ 25V	20000 @ 20V	7360 @ 25V	4340 @ 25V	6930 @ 25V	6450 @ 25V
Power Dissipation (W, Tc)	310	176	254	136	250	200	200	330	300
Operating Temp (°C, TJ)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	TO-263 (D2PAK)	D2PAK (TO-263-3)	TO-263 (D2PAK)	PG-TO263-3	D2PAK (TO-263-3)	PG-TO263-3	D2PAK (7-Lead, TO-263-7)	D2PAK (TO-263-3)
Vgs (Max) (V)	±20	±20	±15	±20	±20	±20	±20	±20	±20
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

IPB015N04NGATMA1 (Infineon Technologies, Active Status) This part meets all critical electrical parameters with 120A continuous drain current at 25°C and 40V Vdss rating. The device is housed in PG-TO263-3 package configuration, which is mechanically and electrically compatible with D2PAK (TO-263-3) footprints. On-state resistance of 1.5 mOhm @ 100A, 10V provides superior performance compared to the original 3.7 mOhm specification. Gate charge of 250 nC @ 10V and input capacitance of 20000 pF @ 20V fall within acceptable ranges. Active product status ensures long-term availability and supply chain continuity. RoHS3 compliance and MSL Level 1 rating match the original specification.

IRF1404ZSTRLPBF (Infineon Technologies, Active Status) This HEXFET® device provides 180A continuous drain current at 25°C, exceeding the 120A requirement of the STB200NF04T4. The 40V Vdss rating and D2PAK package configuration ensure direct compatibility. On-state resistance of 3.7 mOhm @ 75A, 10V matches the original specification. Gate charge of 150 nC @ 10V is lower than the original 210 nC, resulting in faster switching characteristics. Input capacitance of 4340 pF @ 25V is within acceptable range. Active product status and full RoHS3 compliance support long-term design viability.

Secondary Substitutes (Acceptable with Application Review):

DMTH4004SCTB-13 (Diodes Incorporated, Active Status) This part provides 100A continuous drain current at 25°C, which is slightly below the 120A specification but acceptable for applications with reduced current headroom. The 40V Vdss rating and TO-263 (D2PAK) package ensure mechanical compatibility. On-state resistance of 3 mOhm @ 100A, 10V is superior to the original. Gate charge of 68.6 nC @ 10V is significantly lower, enabling faster switching. Active product status ensures availability. Applications requiring the full 120A rating should not use this substitute.

IRF1404STRLPBF (Infineon Technologies, Active Status) This HEXFET® device provides 162A continuous drain current at 25°C, exceeding the 120A requirement. The 40V Vdss rating and D2PAK package ensure compatibility. On-state resistance of 4 mOhm @ 95A, 10V is slightly higher than the original 3.7 mOhm. Gate charge of 200 nC @ 10V is comparable to the original 210 nC. Active product status supports long-term availability.

IRF2804STRLPBF (Infineon Technologies, Active Status) This part provides 75A continuous drain current at 25°C, which is below the 120A specification. The 40V Vdss rating and D2PAK package ensure mechanical compatibility. On-state resistance of 2 mOhm @ 75A, 10V is superior to the original. This substitute is suitable only for applications with reduced current requirements.

Substitutes Not Recommended for Direct Replacement:

BUK964R4-40B,118 (Nexperia USA Inc., Active Status) While this TrenchMOS™ device is active and automotive-qualified (AEC-Q101), the 75A continuous drain current rating falls significantly below the 120A requirement. Maximum gate voltage of ±15V is lower than the ±20V specification of the original part. This device is suitable only for lower-current applications.

AOB240L (Alpha & Omega Semiconductor Inc., Not For New Designs) Although this part provides 105A continuous drain current at 25°C, its product status of "Not For New Designs" indicates limited future availability and support. The 20A (Ta) rating is substantially lower than the 120A (Tc) specification. This substitute should be avoided for new designs.

IPB015N04LGATMA1 (Infineon Technologies, Not For New Designs) Despite meeting the 120A continuous drain current requirement, this part carries a "Not For New Designs" status, limiting its suitability for new production. The higher input capacitance of 28000 pF @ 25V may impact switching performance in high-frequency applications.

IRF2804STRL7PP (Infineon Technologies, Active Status) This 7-lead D2PAK variant provides 160A continuous drain current at 25°C. However, the TO-263-7 package configuration differs from the standard 3-lead D2PAK (TO-263-3) of the original part, requiring PCB layout modifications and potential footprint incompatibility.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower continuous drain current rating than the STB200NF04T4?

A: Substitution with lower current ratings is not recommended for direct replacement. The STB200NF04T4 is rated for 120A continuous drain current at 25°C. Using a part with lower current capacity (such as DMTH4004SCTB-13 at 100A or IRF2804STRLPBF at 75A) reduces design margin and may cause thermal stress or circuit failure under full-load conditions. Lower-current substitutes are acceptable only if the application circuit has been re-evaluated and confirmed to operate safely at the reduced current rating.

Q: What is the difference between D2PAK and PG-TO263-3 packages?

A: D2PAK (TO-263-3) and PG-TO263-3 are mechanically and electrically equivalent package designations. Both refer to a three-lead surface mount package with two signal leads plus a tab for thermal management. The different naming conventions reflect manufacturer-specific package nomenclature. Parts in either package configuration are directly compatible on standard D2PAK PCB footprints without modification.

Q: Why is the STB200NF04T4 classified as obsolete?

A: The STB200NF04T4 is classified as obsolete, indicating that STMicroelectronics has discontinued production and will not accept new orders. Obsolete status typically results from product line consolidation, technology advancement, or market transition to newer device families. Equivalent substitute parts from active product lines ensure design continuity and supply chain reliability.

Q: Can I substitute the STB200NF04T4 with a part rated for 40V but with a different gate threshold voltage?

A: Gate threshold voltage (Vgs(th)) variations between parts may affect switching characteristics and gate drive requirements. The STB200NF04T4 specifies Vgs(th) of 4V @ 250µA. Substitutes with significantly different threshold voltages (such as AOB240L at 2.2V or BUK964R4-40B at 2V) may require gate drive circuit adjustments to ensure proper switching performance. Verify gate drive voltage compatibility before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed in this reference are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original STB200NF04T4 specification. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q: What is the significance of product status (Active vs. Not For New Designs vs. Obsolete)?

A: Product status indicates manufacturer support and long-term availability. Active parts are in full production with guaranteed long-term supply. "Not For New Designs" parts are still available but will eventually be discontinued; these are suitable for legacy system maintenance but not recommended for new product development. Obsolete parts are no longer manufactured and available only through existing inventory channels. For new designs, select only Active-status substitutes.

Q: Can I use IRF2804STRL7PP as a direct replacement for the STB200NF04T4?

A: IRF2804STRL7PP provides superior electrical performance with 160A continuous drain current and 330W power dissipation. However, this part uses a 7-lead D2PAK (TO-263-7) package, which differs from the 3-lead D2PAK (TO-263-3) of the original part. Direct PCB footprint compatibility is not guaranteed. Verify PCB layout compatibility and lead configuration before substitution. If the PCB footprint is designed for 3-lead D2PAK, this part cannot be used without layout modification.

Q: How do I select between IPB015N04NGATMA1 and IRF1404ZSTRLPBF?

A: Both parts meet the critical electrical parameters of the STB200NF04T4 and are Active-status products. IPB015N04NGATMA1 provides exactly 120A continuous drain current with superior on-state resistance of 1.5 mOhm, making it the closest electrical match. IRF1404ZSTRLPBF provides higher current capacity (180A) and lower gate charge (150 nC), offering better performance margin and faster switching. Select IPB015N04NGATMA1 for direct replacement with minimal circuit changes. Select IRF1404ZSTRLPBF if improved switching speed or higher current capacity is beneficial to the application.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. The STB200NF04T4 specifies 210 nC @ 10V. Substitutes with lower gate charge (such as BUK964R4-40B at 64 nC or DMTH4004SCTB-13 at 68.6 nC) switch faster and reduce gate drive power dissipation. Substitutes with higher gate charge (such as IPB015N04NGATMA1 at 250 nC) switch more slowly but may provide better noise immunity. Verify that the gate drive circuit can supply sufficient current to charge the gate within the required switching time.

Q: Are there any thermal management differences between substitute parts?

A: Power dissipation ratings vary among substitutes. The STB200NF04T4 is rated for 310W (Tc), while substitutes range from 136W (DMTH4004SCTB-13) to 330W (IRF2804STRL7PP). Higher power dissipation ratings indicate better thermal performance and lower junction temperature rise under the same operating conditions. All parts use the same D2PAK package with identical thermal interface characteristics. Verify that the PCB thermal design (copper area, via placement, heat sink attachment) is adequate for the selected substitute's power dissipation.

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