STB200N4F3 Equivalent & Substitute Parts

Part Overview

The STB200N4F3 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ series, rated for 40V drain-to-source voltage and 120A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package with a maximum power dissipation of 300W at case temperature. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	120	A
On-State Resistance (Rds On) @ 80A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	75	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	5100	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STB200N4F3 is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 40V. Parts rated at 60V are acceptable as they provide backward compatibility with 40V applications.

Current Rating: Substitute parts must support a continuous drain current (Id) of at least 120A at 25°C to maintain equivalent current-handling capability.

On-State Resistance: Rds On values must be comparable to the original 4mOhm specification to ensure similar power dissipation and thermal performance.

Package Type: All substitutes must use D2PAK (TO-263-3) or compatible surface mount packages to ensure mechanical and thermal interface compatibility.

Operating Temperature: All substitutes must support the full -55°C to 175°C operating range.

Compliance: All substitutes must maintain ROHS3 compliance and EAR99 export classification.

Substitute parts are grouped into two categories: direct replacements with identical or superior electrical specifications, and functional alternatives with enhanced performance characteristics that maintain backward compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	Status
STB200N4F3	STMicroelectronics	40	120	4.0	4	75	300	D2PAK	Obsolete
AUIRL1404ZSTRL	International Rectifier	40	160	3.1	2.7	110	200	D2PAK	Active
IPB015N04LGATMA1	Infineon Technologies	40	120	1.5	2	346	250	D2PAK	Not For New Designs
IPB015N04NGATMA1	Infineon Technologies	40	120	1.5	4	250	250	D2PAK	Active
IRF1404STRLPBF	Infineon Technologies	40	162	4.0	4	200	200	D2PAK	Active
IRF1404ZSTRLPBF	Infineon Technologies	40	180	3.7	4	150	200	D2PAK	Active
IRF2204SPBF	Infineon Technologies	40	170	3.6	4	200	200	D2PAK	Obsolete
IRF2804STRL7PP	Infineon Technologies	40	160	1.6	4	260	330	D2PAK (7-Lead)	Active
IRF2804STRLPBF	Infineon Technologies	40	75	2.0	4	240	300	D2PAK	Active
IRFS3306TRLPBF	Infineon Technologies	60	120	4.2	4	120	230	D2PAK	Active
IRL1404STRLPBF	Infineon Technologies	40	160	4.0	3	140	200	D2PAK	Not For New Designs

Engineering Selection Recommendations

Primary Substitutes (Active Status, Direct Replacement):

IPB015N04NGATMA1 is the recommended primary substitute. This Infineon OptiMOS™ device matches the STB200N4F3 in voltage rating (40V) and current rating (120A), with superior on-state resistance (1.5mOhm versus 4mOhm), resulting in lower power dissipation and improved thermal performance. The part is in active production status with full ROHS3 compliance and unlimited moisture sensitivity rating.

IRF1404ZSTRLPBF provides an alternative with higher current capability (180A) and lower on-state resistance (3.7mOhm), offering enhanced performance margin. This HEXFET® device is in active production with identical voltage rating and compatible gate threshold voltage.

IRF2804STRL7PP offers the highest power dissipation capability (330W) with superior on-state resistance (1.6mOhm) and higher current rating (160A). The 7-lead D2PAK package provides enhanced thermal performance through additional lead connections.

Secondary Substitutes (Active Status, Enhanced Voltage Rating):

IRFS3306TRLPBF operates at 60V drain-to-source voltage, providing backward compatibility with 40V applications while offering higher voltage margin. Current rating matches the original specification at 120A with comparable on-state resistance (4.2mOhm).

Alternatives (Not Recommended for New Designs):

IPB015N04LGATMA1 and IRL1404STRLPBF are classified as "Not For New Designs" and should be avoided for new product development despite meeting electrical specifications.

Obsolete Parts (Not Recommended):

IRF2204SPBF is obsolete and should not be selected for new applications.

Frequently Asked Questions (FAQ)

Q: Can the IPB015N04NGATMA1 directly replace the STB200N4F3 in existing designs?

A: Yes. The IPB015N04NGATMA1 maintains identical voltage (40V) and current (120A) ratings with superior on-state resistance. The D2PAK package is mechanically and thermally compatible. Gate threshold voltage (4V) and maximum gate voltage (±20V) specifications match the original part. Thermal performance improves due to lower Rds On, reducing junction temperature in equivalent operating conditions.

Q: What is the difference between the IRF1404STRLPBF and IRF1404ZSTRLPBF?

A: Both are HEXFET® devices with 40V rating. The IRF1404ZSTRLPBF provides higher current capability (180A versus 162A) and lower on-state resistance (3.7mOhm versus 4.0mOhm). Gate charge is lower in the Z variant (150nC versus 200nC), resulting in faster switching characteristics. Both are in active production status.

Q: Why is IRFS3306TRLPBF listed as a substitute if it has a 60V rating?

A: The IRFS3306TRLPBF is a valid substitute for 40V applications because higher voltage-rated devices are backward compatible. The 60V rating provides additional voltage margin without affecting performance in 40V circuits. Current rating (120A) and on-state resistance (4.2mOhm) are comparable to the original specification.

Q: What is the significance of the D2PAK (7-Lead) package used in IRF2804STRL7PP?

A: The 7-lead D2PAK package includes additional thermal and electrical connections compared to the standard 3-lead D2PAK. This configuration improves thermal dissipation and reduces parasitic inductance, enabling the higher power dissipation rating (330W versus 300W) and superior on-state resistance (1.6mOhm).

Q: Should I use parts marked "Not For New Designs"?

A: No. Parts with "Not For New Designs" status should be used only for maintenance or repair of existing products. For new product development, select from parts with "Active" production status: IPB015N04NGATMA1, IRF1404STRLPBF, IRF1404ZSTRLPBF, IRF2804STRL7PP, IRF2804STRLPBF, or IRFS3306TRLPBF.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance and EAR99 export classification, matching the environmental and regulatory status of the original STB200N4F3.

Q: What is the impact of lower gate charge (Qg) on circuit design?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, resulting in faster switching transitions and lower gate drive power consumption. Parts with lower Qg (such as IRF1404ZSTRLPBF at 150nC) are advantageous in high-frequency switching applications.

Q: Can I use IRF2804STRLPBF as a substitute if my application requires 120A continuous current?

A: No. The IRF2804STRLPBF is rated for only 75A continuous drain current, which is insufficient for applications requiring 120A. Select alternatives with current ratings of 120A or higher: IPB015N04NGATMA1, AUIRL1404ZSTRL, IRF1404STRLPBF, IRF1404ZSTRLPBF, IRF2204SPBF, IRF2804STRL7PP, IRFS3306TRLPBF, or IRL1404STRLPBF.

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