STB18NM80 N-Channel MOSFET 800V 17A Equivalent & Substitute Parts

Part Overview

The STB18NM80 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 17A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is part of the MDmesh™ series. The component is currently in Active product status with 6200 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within the same application category. The following substitute devices maintain critical electrical parameters including voltage rating, current capacity, and package form factor.

Substiute Parts

STB18NM80

STMicroelectronicsIn Stock: 6265STB18NM80 Datasheet

Current PartRFQ

FCB290N80

onsemiIn Stock: 3314FCB290N80 Datasheet

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IXFA22N60P3

IXYSIn Stock: 986IXFA22N60P3 Datasheet

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SPB17N80C3ATMA1

Infineon TechnologiesIn Stock: 2243SPB17N80C3ATMA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STB18NM80 are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• Continuous Drain Current (Id): 17A minimum at 25°C
• Package Type: Surface Mount TO-263 (D2PAK) or equivalent
• On-State Resistance (Rds On): Within acceptable operating range
• Gate Charge (Qg): Acceptable for drive circuit compatibility
• RoHS3 Compliance: Required for regulatory alignment

Substitution Logic: Devices meeting or exceeding the voltage and current ratings with compatible package specifications are classified as direct substitutes. Variations in gate charge, input capacitance, and power dissipation are acceptable provided they do not degrade circuit performance. Devices with lower voltage ratings or current capacity are not suitable substitutes.

Parameter Comparison

Engineering Selection Recommendations

FCB290N80 (onsemi): This device matches the STB18NM80 in voltage rating (800V), current capacity (17A), and package type (TO-263 D2PAK). On-state resistance is marginally lower at 290mOhm versus 295mOhm. However, the product status is listed as "Not For New Designs," which restricts its use in new development projects. This substitute is suitable only for legacy system maintenance or replacement applications where the original part is unavailable.

IXFA22N60P3 (IXYS): This device operates at a reduced voltage rating of 600V compared to the 800V requirement of the STB18NM80. While current capacity is higher at 22A, the lower voltage rating makes this device unsuitable for direct substitution in 800V applications. This part is not recommended as an equivalent substitute.

SPB17N80C3ATMA1 (Infineon Technologies): This device is a direct functional equivalent with matching 800V voltage rating and 17A current capacity. The package designation (PG-TO263-3-2) is compatible with TO-263 D2PAK specifications. On-state resistance is 290mOhm at 11A, which is acceptable. The product status is Active, supporting use in new designs. Gate charge is elevated at 177nC compared to 70nC in the main part, requiring verification of drive circuit compatibility. This substitute is suitable for applications where Infineon CoolMOS™ technology is acceptable.

Recommendation Priority: For new designs, SPB17N80C3ATMA1 is the preferred substitute. For legacy applications requiring the exact electrical profile, FCB290N80 is available but restricted to non-new-design applications. IXFA22N60P3 is not suitable due to insufficient voltage rating.

Frequently Asked Questions (FAQ)

Q: Can IXFA22N60P3 be used as a direct replacement for STB18NM80?

A: No. The IXFA22N60P3 operates at 600V maximum drain-to-source voltage, which is insufficient for applications requiring 800V rating. Using this device in an 800V circuit will result in device failure.

Q: What is the primary difference between FCB290N80 and SPB17N80C3ATMA1?

A: Both devices match the 800V/17A specifications. The key difference is product status: FCB290N80 is marked "Not For New Designs," restricting its use to legacy applications, while SPB17N80C3ATMA1 is Active and suitable for new development. Additionally, SPB17N80C3ATMA1 has higher gate charge (177nC vs. 75nC), which may affect drive circuit requirements.

Q: Are all substitute parts in the same package?

A: All substitute parts use Surface Mount TO-263 (D2PAK) or compatible variants (TO-263AA, PG-TO263-3-2). These packages are mechanically and electrically compatible for PCB mounting.

Q: Does gate charge variation affect circuit performance?

A: Gate charge influences switching speed and drive circuit power consumption. SPB17N80C3ATMA1 has significantly higher gate charge (177nC) compared to STB18NM80 (70nC). Verify that the gate drive circuit can supply adequate current for the higher charge requirement.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant certification, matching the environmental compliance of the main part.

Q: Which substitute is recommended for new product designs?

A: SPB17N80C3ATMA1 is recommended for new designs due to its Active product status and full electrical equivalence at 800V/17A. Verify gate drive circuit compatibility due to elevated gate charge specifications.