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STB160NF3LLT4 Equivalent & Substitute Parts
Part Overview
The STB160NF3LLT4 is an N-Channel 30V 160A MOSFET manufactured by STMicroelectronics in the STripFET™ III series, housed in a D2PAK surface mount package. This device is classified as obsolete, indicating it has reached end-of-life status and is no longer recommended for new designs. The obsolete classification necessitates identification of equivalent and substitute components that maintain functional compatibility while offering active product status and continued manufacturer support.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 160 | A |
| Rds On (Max) @ 80A, 10V | 3.3 | mOhm |
| Gate Charge (Qg) @ 4.5V | 110 | nC |
| Power Dissipation (Max) | 300 | W |
| Package Type | D2PAK (TO-263-3) | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the STB160NF3LLT4 is determined by the following critical parameters: N-Channel FET topology, D2PAK surface mount package, drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and gate charge specifications. Substitute parts must maintain compatibility across these electrical and mechanical dimensions to ensure functional equivalence in the target application.
The substitute parts are grouped into two categories:
Direct Substitutes (Voltage-Rated Upgrade): Parts that exceed or match the 30V Vdss rating while maintaining or exceeding the 160A continuous drain current specification and D2PAK packaging.
Functional Alternatives (Current-Reduced Substitutes): Parts that maintain the 30V Vdss rating and D2PAK package but operate at reduced continuous drain current (100A), suitable for applications where full 160A capacity is not required.
Parameter Comparison
| Parameter | STB160NF3LLT4 | STB270N4F3 | IRL7833STRLPBF | PSMN2R7-30BL,118 | PSMN3R4-30BL,118 |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | Infineon Technologies | NXP USA Inc. | NXP USA Inc. |
| Vdss (V) | 30 | 40 | 30 | 30 | 30 |
| Id @ 25°C (A) | 160 | 160 | 150 | 100 | 100 |
| Rds On (Max) @ 10V (mOhm) | 3.3 @ 80A | 2.5 @ 80A | 3.8 @ 38A | 3.0 @ 25A | 3.3 @ 25A |
| Gate Charge (nC) | 110 @ 4.5V | 150 @ 10V | 47 @ 4.5V | 66 @ 10V | 64 @ 10V |
| Power Dissipation (W) | 300 | 330 | 140 | 170 | 114 |
| Package | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
| Product Status | Obsolete | Active | Not For New Designs | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | Not Specified | Not Specified |
Engineering Selection Recommendations
STB270N4F3 (STMicroelectronics): This part is the primary direct substitute for the STB160NF3LLT4. It maintains the same manufacturer lineage (STripFET™ III series), identical continuous drain current rating (160A), and D2PAK packaging. The STB270N4F3 features an elevated Vdss rating of 40V, providing enhanced voltage margin over the original 30V specification. The part carries Active product status with ROHS3 compliance and AEC-Q101 automotive qualification, ensuring long-term availability and supply chain stability. The improved on-resistance (2.5mOhm versus 3.3mOhm) and increased power dissipation capability (330W versus 300W) provide performance advantages in thermal management.
IRL7833STRLPBF (Infineon Technologies): This part offers electrical compatibility at the 30V Vdss and D2PAK package level but with reduced continuous drain current (150A versus 160A). The HEXFET® series device carries "Not For New Designs" status, limiting its suitability for new applications despite active inventory availability. This part is appropriate only for legacy system maintenance where the 150A rating satisfies application requirements.
PSMN2R7-30BL,118 and PSMN3R4-30BL,118 (NXP USA Inc.): These Nexperia parts maintain 30V Vdss and D2PAK packaging but operate at 100A continuous drain current. Both parts carry Active product status and are suitable for applications where the full 160A capability of the original part is not required. The PSMN2R7-30BL,118 offers superior on-resistance (3.0mOhm) and power dissipation (170W), while the PSMN3R4-30BL,118 provides matched on-resistance (3.3mOhm) to the original part with lower power dissipation (114W).
Frequently Asked Questions (FAQ)
Q: Can the STB270N4F3 be used as a direct replacement for the STB160NF3LLT4?
A: Yes. The STB270N4F3 is a direct substitute. Both devices share identical continuous drain current (160A), N-Channel topology, D2PAK packaging, and on-resistance characteristics at the specified gate voltage. The elevated Vdss rating (40V versus 30V) provides additional voltage headroom and does not compromise compatibility in 30V applications.
Q: What is the primary difference between the STB160NF3LLT4 and the NXP Nexperia alternatives?
A: The NXP parts (PSMN2R7-30BL,118 and PSMN3R4-30BL,118) operate at 100A continuous drain current, compared to the 160A rating of the original part. These substitutes are suitable only for applications where the reduced current capacity meets design requirements. All three parts maintain the same 30V Vdss rating and D2PAK package.
Q: Why is the IRL7833STRLPBF marked "Not For New Designs"?
A: The "Not For New Designs" classification indicates that Infineon has discontinued active development and marketing of this part. While inventory remains available, the part is not recommended for new product development due to uncertain long-term availability and lack of manufacturer support for design optimization.
Q: Are all substitute parts RoHS3 compliant?
A: The STB270N4F3 and IRL7833STRLPBF are explicitly ROHS3 compliant. The NXP Nexperia parts (PSMN2R7-30BL,118 and PSMN3R4-30BL,118) do not specify RoHS status in the provided data. Verification of RoHS compliance with the supplier is required for applications with regulatory requirements.
Q: What is the impact of different gate charge specifications on circuit design?
A: Gate charge (Qg) affects gate driver design and switching speed. The STB160NF3LLT4 specifies 110nC at 4.5V, while the STB270N4F3 specifies 150nC at 10V. Higher gate charge requires increased gate driver current capability. The IRL7833STRLPBF specifies 47nC at 4.5V, requiring lower gate drive energy. Existing gate driver circuits must be evaluated for compatibility with the selected substitute part's gate charge specification.
Q: Can the PSMN parts be used in high-current applications requiring the full 160A rating?
A: No. The PSMN2R7-30BL,118 and PSMN3R4-30BL,118 are rated for 100A continuous drain current. These parts are not suitable for applications requiring sustained operation at 160A. Use of these parts in such applications will result in thermal stress and potential device failure.
Q: What packaging considerations apply to all substitute parts?
A: All substitute parts use the D2PAK (TO-263-3) surface mount package, identical to the STB160NF3LLT4. PCB layout, thermal management, and soldering processes remain compatible across all listed substitutes without modification.
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