STB155N3H6 Equivalent & Substitute Parts

Part Overview

The STB155N3H6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 80A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for applications requiring moderate current switching with low on-state resistance. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	80	A
On-State Resistance (Rds On) @ 40A, 10V	3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	62	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the STB155N3H6 is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: TO-263-3 (D2PAK) surface mount
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 80A
On-State Resistance (Rds On): Equal to or lower than 3mOhm (at comparable test conditions)
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Power Dissipation: Equal to or greater than 110W

Substitute parts must satisfy all mandatory criteria and maintain electrical performance within the specified ranges. Parts exceeding these parameters are acceptable for direct substitution provided mechanical and thermal characteristics remain compatible with the original application footprint.

Parameter Comparison

Parameter	STB155N3H6 (Main)	IPB80N03S4L03ATMA1	IRL7833STRLPBF	PSMN2R7-30BL,118	PSMN3R4-30BL,118	PSMN3R4-30BLE,118
Manufacturer	STMicroelectronics	Infineon Technologies	Infineon Technologies	NXP USA Inc.	NXP USA Inc.	Nexperia USA Inc.
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	80	80	150	100	100	120
Rds On (mOhm)	3.0 @ 40A, 10V	3.3 @ 80A, 10V	3.8 @ 38A, 10V	3.0 @ 25A, 10V	3.3 @ 25A, 10V	3.4 @ 25A, 10V
Vgs(th) (V)	4.0 @ 250µA	2.2 @ 45µA	2.3 @ 250µA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA
Qg @ 10V (nC)	62	75	47	66	64	81
Ciss @ 25V (pF)	3650	5100	4170	3954	3907	4682
Power Dissipation (W)	110	94	140	170	114	178
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3 (D2PAK)	PG-TO263-3-2	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Obsolete	Not For New Designs	Active	Active	Active
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—	—	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The PSMN3R4-30BL,118 and PSMN3R4-30BLE,118 from NXP/Nexperia are the preferred substitutes for the STB155N3H6. Both parts maintain the 30V Vdss rating, exceed the 80A continuous drain current requirement with 100A and 120A ratings respectively, and are housed in compatible D2PAK packages. Both parts carry active product status, ensuring long-term availability and supply chain stability. The PSMN3R4-30BLE,118 variant is supplied in Tape & Reel packaging, suitable for automated assembly processes.

The PSMN2R7-30BL,118 is an alternative active substitute offering 100A continuous drain current with superior power dissipation capability (170W). This part is suitable for applications where thermal performance is a primary concern.

Secondary Substitutes (Obsolete/Not For New Designs):

The IPB80N03S4L03ATMA1 from Infineon Technologies provides an exact current rating match (80A) and maintains all critical electrical parameters. However, this part carries obsolete product status, limiting its suitability for new designs requiring long-term component availability.

The IRL7833STRLPBF from Infineon Technologies exceeds the current requirement with a 150A rating and is classified as "Not For New Designs," indicating limited future availability. This part is suitable only for legacy system maintenance or applications where higher current capacity is beneficial.

Compliance Considerations:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, consistent with the original STB155N3H6. Moisture sensitivity level remains at MSL 1 (Unlimited) across all alternatives, ensuring compatibility with standard handling and storage procedures.

Frequently Asked Questions (FAQ)

Q: Can the PSMN3R4-30BLE,118 directly replace the STB155N3H6 without circuit modifications?

A: Yes. The PSMN3R4-30BLE,118 maintains the 30V Vdss rating, D2PAK package footprint, and surface mount configuration. The 120A continuous drain current exceeds the original 80A specification, and on-state resistance remains within acceptable limits. No circuit modifications are required for direct substitution.

Q: What is the difference between PSMN3R4-30BL,118 and PSMN3R4-30BLE,118?

A: The primary difference is packaging. PSMN3R4-30BL,118 is supplied in bulk packaging, while PSMN3R4-30BLE,118 is supplied in Tape & Reel format. Both parts are electrically identical with 100A and 120A continuous drain current ratings respectively. Selection depends on assembly process requirements and volume considerations.

Q: Why is the IRL7833STRLPBF listed as "Not For New Designs"?

A: The IRL7833STRLPBF carries a "Not For New Designs" status, indicating that the manufacturer is not recommending this part for new product development. While the part remains functionally compatible with the STB155N3H6, its use should be limited to legacy system maintenance or applications where higher current capacity (150A) is specifically required.

Q: Are all substitute parts compatible with the original PCB footprint?

A: Yes. All substitute parts use the TO-263-3 (D2PAK) package configuration, which maintains identical lead spacing and mounting footprint. Direct PCB substitution is possible without layout modifications.

Q: What is the significance of the gate threshold voltage (Vgs(th)) differences between the main part and substitutes?

A: The STB155N3H6 has a Vgs(th) of 4V, while most substitutes range from 2.15V to 2.3V. Lower threshold voltages in substitute parts enable faster switching response and reduced gate drive requirements. These differences are compatible with standard gate drive circuits and do not prevent substitution.

Q: Which substitute offers the best thermal performance?

A: The PSMN2R7-30BL,118 provides the highest power dissipation rating at 170W, followed by PSMN3R4-30BLE,118 at 178W. Selection should be based on application thermal requirements and heat dissipation capabilities of the target circuit.

Q: Is the IPB80N03S4L03ATMA1 suitable for new production designs?

A: The IPB80N03S4L03ATMA1 carries obsolete product status. While electrically compatible, its use in new production designs is not recommended due to uncertain long-term availability. Active substitutes such as PSMN3R4-30BL,118 or PSMN3R4-30BLE,118 are preferred for new designs.

Q: What packaging format should be selected for high-volume automated assembly?

A: The PSMN3R4-30BLE,118 is supplied in Tape & Reel format, optimized for automated pick-and-place assembly processes. The PSMN3R4-30BL,118 and PSMN2R7-30BL,118 are supplied in bulk packaging, suitable for manual assembly or lower-volume applications.

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