STB141NF55-1 Equivalent & Substitute Parts

Part Overview

The STB141NF55-1 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage and 80A continuous drain current. This device is part of the STripFET™ II series and features a through-hole I2PAK package configuration. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for existing applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	80	A
Rds On (Max) @ 40A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	142	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package Type	I2PAK (TO-262-3)	—

Substitute Part Grouping Explanation

Substitution of the STB141NF55-1 is determined by the following critical electrical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), and on-state resistance (Rds On). All substitute parts must maintain a Vdss rating of 55V and support the required current levels for the application.

The identified substitute parts meet the following substitution criteria:

Vdss: 55V (matching the main part)
Id: 75A or greater (maintaining or exceeding the 80A requirement within acceptable thermal limits)
Rds On: Within acceptable range for the application voltage and current conditions
Operating temperature range: -55°C to 175°C (matching the main part)
Technology: N-Channel MOSFET (Metal Oxide)
RoHS3 compliance and REACH unaffected status

Mounting type and package configuration differ between the main part (through-hole I2PAK) and substitute parts (surface-mount D2PAK/TO-263), requiring circuit board redesign or adapter solutions for direct replacement.

Parameter Comparison

Parameter	STB141NF55-1	BUK9612-55B,118	IPB80N06S2L11ATMA2	Unit
Manufacturer	STMicroelectronics	Nexperia USA Inc.	Infineon Technologies	—
Drain to Source Voltage (Vdss)	55	55	55	V
Continuous Drain Current (Id) @ 25°C	80	75	80	A
Rds On (Max) @ 10V	8 @ 40A	10 @ 25A	10.7 @ 40A	mOhm
Gate Threshold Voltage (Vgs(th))	4 @ 250µA	2 @ 1mA	2 @ 93µA	V
Gate Charge (Qg) @ 10V	142	31 @ 5V	80	nC
Power Dissipation (Max)	300	157	158	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Product Status	Obsolete	Active	Active	—
Mounting Type	Through Hole	Surface Mount	Surface Mount	—
Package Type	I2PAK (TO-262-3)	D2PAK (TO-263-3)	PG-TO263-3-2 (TO-263-3)	—
RoHS3 Compliance	Yes	Yes	Yes	—
REACH Status	Unaffected	Unaffected	Unaffected	—

Engineering Selection Recommendations

BUK9612-55B,118 (Nexperia USA Inc.)

This part is an active product with AEC-Q101 automotive qualification. It maintains the 55V Vdss rating and provides 75A continuous drain current, which is within acceptable operating parameters for applications designed for the STB141NF55-1. The lower power dissipation rating (157W versus 300W) requires thermal analysis to confirm suitability for high-power applications. The surface-mount D2PAK package necessitates circuit board redesign. This substitute is suitable for new designs and applications where automotive-grade qualification is required.

IPB80N06S2L11ATMA2 (Infineon Technologies)

This part is an active product from the OptiMOS™ series, matching the 55V Vdss and 80A continuous drain current specifications of the main part. The electrical characteristics closely align with the STB141NF55-1, including gate charge and on-state resistance parameters. The surface-mount PG-TO263-3-2 package requires circuit board redesign. This substitute provides the most direct electrical equivalence and is suitable for applications requiring matched current and voltage ratings.

Both substitute parts maintain compliance with RoHS3 and REACH requirements, ensuring regulatory compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can the STB141NF55-1 be directly replaced with BUK9612-55B,118 or IPB80N06S2L11ATMA2 without circuit modification?

A: Direct replacement is not possible due to package differences. The STB141NF55-1 uses a through-hole I2PAK package, while both substitutes use surface-mount D2PAK or TO-263 packages. Circuit board redesign or adapter solutions are required.

Q: What is the primary difference in electrical performance between the STB141NF55-1 and IPB80N06S2L11ATMA2?

A: Both parts share identical Vdss (55V) and Id (80A) ratings. The IPB80N06S2L11ATMA2 exhibits lower gate charge (80 nC versus 142 nC) and lower input capacitance (2075 pF versus 5300 pF), resulting in faster switching characteristics. On-state resistance is slightly higher (10.7 mOhm versus 8 mOhm at 40A, 10V).

Q: Is the BUK9612-55B,118 suitable for high-power applications?

A: The BUK9612-55B,118 has a maximum power dissipation rating of 157W, compared to 300W for the STB141NF55-1. Applications requiring sustained power dissipation above 157W require thermal analysis or alternative parts with higher power ratings.

Q: What are the gate drive voltage requirements for these substitute parts?

A: The STB141NF55-1 specifies 10V drive voltage for maximum Rds On specification. The BUK9612-55B,118 operates at both 5V and 10V drive voltages, while the IPB80N06S2L11ATMA2 operates at 4.5V and 10V. Existing gate drive circuits designed for 10V operation are compatible with all three parts.

Q: Are both substitute parts suitable for automotive applications?

A: The BUK9612-55B,118 carries AEC-Q101 automotive qualification. The IPB80N06S2L11ATMA2 does not list automotive qualification in the provided specifications. Application requirements determine whether automotive qualification is necessary.

Q: What is the moisture sensitivity level for these parts?

A: All three parts, including the STB141NF55-1 and both substitutes, have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

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