STB141NF55 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STB141NF55 is an N-Channel MOSFET manufactured by STMicroelectronics in the STripFET™ II series. This device is rated for 55V drain-to-source voltage with 80A continuous drain current and 300W power dissipation. The component is packaged in D2PAK (TO-263-3) surface mount configuration and is ROHS3 compliant with active product status.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible packaging and thermal characteristics. Alternative models may be required due to inventory availability, manufacturing lead times, or design optimization for specific application requirements.

Key Parameters

Parameter	STB141NF55	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	80	A
On-State Resistance (Rds On) @ 40A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	142	nC
Input Capacitance (Ciss) @ 25V	5300	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the STB141NF55 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent: Parts that maintain identical or near-identical electrical specifications across all critical parameters including Vdss, Id, Rds On, gate charge, and power dissipation, while using the same D2PAK surface mount package.

Similar Specification: Parts that share the same Vdss rating and D2PAK package but may differ in continuous drain current, on-state resistance, gate charge, or power dissipation. These parts are suitable for applications where the primary voltage rating and package form factor are critical, but current handling or thermal performance may be adjusted.

The following parameters determine substitution eligibility:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must support -55°C to 175°C
Gate Threshold Voltage: Must be compatible with 10V drive voltage
Mounting Type: Must be surface mount

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
STB141NF55	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	5300 @ 25V	300	D2PAK	Active
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	5300 @ 25V	300	D2PAK	Active
HUF75345S3ST	onsemi	55	75	7 @ 75A, 10V	275 @ 20V	4000 @ 25V	325	D2PAK	Active
IRF1010ZSTRLPBF	Infineon Technologies	55	75	7.5 @ 75A, 10V	95 @ 10V	2840 @ 25V	140	D2PAK	Not For New Designs
IRF1018ESTRLPBF	Infineon Technologies	60	79	8.4 @ 47A, 10V	69 @ 10V	2290 @ 50V	110	D2PAK	Active
IRF1407STRLPBF	Infineon Technologies	75	100	7.8 @ 78A, 10V	250 @ 10V	5600 @ 25V	200	D2PAK	Active
IRF2807ZSTRLPBF	Infineon Technologies	75	75	9.4 @ 53A, 10V	110 @ 10V	3270 @ 25V	170	D2PAK	Not For New Designs
IRF3205STRLPBF	Infineon Technologies	55	110	8 @ 62A, 10V	146 @ 10V	3247 @ 25V	200	D2PAK	Active
IRF3205ZSTRLPBF	Infineon Technologies	55	75	6.5 @ 66A, 10V	110 @ 10V	3450 @ 25V	170	D2PAK	Active
IRF3808STRLPBF	Infineon Technologies	75	106	7 @ 82A, 10V	220 @ 10V	5310 @ 25V	200	D2PAK	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

STB140NF55T4 is the parametric equivalent to STB141NF55. Both devices are manufactured by STMicroelectronics in the STripFET™ II series with identical electrical specifications: 55V Vdss, 80A continuous drain current, 8mOhm Rds On, and 300W power dissipation. Both are ROHS3 compliant and rated for -55°C to 175°C operation. The primary difference is moisture sensitivity level (STB140NF55T4 is MSL 1 versus STB141NF55 MSL 3). Both are active products suitable for new designs.

Active Status Alternatives (55V Rating):

IRF3205STRLPBF and IRF3205ZSTRLPBF are active Infineon HEXFET® devices with 55V Vdss rating and D2PAK packaging. IRF3205STRLPBF supports 110A continuous drain current with 200W power dissipation. IRF3205ZSTRLPBF supports 75A continuous drain current with 170W power dissipation. Both maintain 8mOhm or lower Rds On and are ROHS3 compliant.

Active Status Alternatives (Higher Voltage Rating):

IRF1407STRLPBF and IRF3808STRLPBF are active Infineon HEXFET® devices rated for 75V Vdss with D2PAK packaging. IRF1407STRLPBF supports 100A continuous drain current with 200W power dissipation. IRF3808STRLPBF supports 106A continuous drain current with 200W power dissipation. These devices provide higher voltage margin for applications requiring overvoltage protection.

Not For New Designs:

IRF1010ZSTRLPBF and IRF2807ZSTRLPBF are marked "Not For New Designs" and should not be selected for new product development despite active inventory availability.

onsemi Alternative:

HUF75345S3ST is an active onsemi UltraFET™ device with 55V Vdss, 75A continuous drain current, and 325W power dissipation in D2PAK packaging. This device offers superior power dissipation capability and lower Rds On (7mOhm) compared to the main part.

Frequently Asked Questions (FAQ)

Q: Can STB140NF55T4 be used as a direct replacement for STB141NF55?

A: Yes. STB140NF55T4 is a parametric equivalent with identical electrical specifications, D2PAK packaging, and active product status. The only difference is moisture sensitivity level (MSL 1 versus MSL 3), which does not affect electrical performance.

Q: What is the difference between 55V and 75V rated devices in this list?

A: Devices rated for 75V (IRF1407STRLPBF, IRF2807ZSTRLPBF, IRF3808STRLPBF) have higher drain-to-source voltage capability. These can be used in applications where the STB141NF55 (55V) is specified, provided the application does not require the lower voltage rating for cost optimization. The 75V devices provide additional voltage margin for transient overvoltage conditions.

Q: Why is IRF1010ZSTRLPBF listed as "Not For New Designs"?

A: IRF1010ZSTRLPBF carries a "Not For New Designs" product status designation from Infineon Technologies. This indicates the device is in mature or end-of-life phase. While inventory may be available, this part should not be selected for new product development. Active alternatives such as IRF3205STRLPBF or IRF3205ZSTRLPBF are recommended.

Q: Are all substitute parts in D2PAK packaging?

A: Yes. All substitute parts listed in this reference are packaged in D2PAK (TO-263-3) surface mount configuration, maintaining mechanical and thermal interface compatibility with the STB141NF55.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The STB141NF55 has 142nC gate charge at 10V. Substitute parts with lower gate charge (such as IRF1010ZSTRLPBF at 95nC) require less gate drive energy and switch faster. Parts with higher gate charge (such as IRF1407STRLPBF at 250nC) require more robust gate drive circuits but may offer other performance benefits.

Q: Can I use a higher current rated device (such as IRF3205STRLPBF at 110A) in place of the 80A STB141NF55?

A: Yes. Higher current rated devices are electrically compatible and can be used as substitutes. The application will operate within the device's current capability. Verify that the printed circuit board layout, thermal management, and gate drive circuit are suitable for the substitute device's characteristics.

Q: What does ROHS3 compliance mean?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting the use of specific hazardous materials including lead, mercury, cadmium, and certain flame retardants. All parts listed in this reference are ROHS3 compliant.

Q: Are there packaging format differences between substitute parts?

A: All substitute parts listed use D2PAK (TO-263-3) surface mount packaging. However, IRF3205ZPBF is listed with TO-220AB through-hole packaging and is not a direct substitute due to different mounting type and thermal characteristics.

Q: What is the operating temperature range for all listed devices?

A: All substitute parts support the same operating temperature range as the STB141NF55: -55°C to 175°C junction temperature (TJ). This ensures thermal compatibility across the full application temperature envelope.

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