STB100NF04T4 Equivalent & Substitute Parts

Part Overview

The STB100NF04T4 is an N-Channel MOSFET manufactured by STMicroelectronics, part of the STripFET™ II series. This device operates at 40V drain-to-source voltage with a continuous drain current of 120A at 25°C and maximum power dissipation of 300W. The component is housed in a D2PAK (TO-263-3) surface mount package and is qualified to AEC-Q101 automotive standards with Active product status.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging options are required, or when design optimization calls for components with comparable electrical characteristics within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	120	A
On-State Resistance (Rds On) @ 50A, 10V	4.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	150	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	5100	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—
AEC-Q101 Qualification	Yes	—
RoHS3 Compliance	Compliant	—

Substitute Part Grouping Explanation

Substitution of the STB100NF04T4 is determined by the following critical parameters:

Voltage Class: All substitute parts must operate at 40V drain-to-source voltage (Vdss). Parts with higher voltage ratings (55V or greater) are not direct substitutes due to different die geometry and performance characteristics.

Current Rating: Substitute parts must support continuous drain current (Id) at or above 120A at 25°C. Parts rated below this threshold cannot handle the same load conditions.

Package Compatibility: The D2PAK (TO-263-3) surface mount package is the primary form factor. Variants such as D2PAK (7-Lead) or alternative package types may require PCB layout modifications.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. Substitute parts with significantly lower Rds On values indicate improved efficiency; higher values indicate reduced performance.

Gate Charge (Qg): Lower gate charge values reduce switching losses and driver circuit stress. This parameter influences circuit design but does not prevent substitution.

Power Dissipation Rating: Substitute parts must support at least 250W to 300W thermal dissipation to maintain equivalent thermal margins.

Product Status: Active status parts are preferred for new designs. Obsolete or Not For New Designs status parts are acceptable for legacy system support or existing inventory management.

Automotive Qualification: AEC-Q101 qualification ensures reliability in automotive applications. All listed substitutes maintain this qualification.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Dissipation (W)	Package	Product Status	AEC-Q101
STB100NF04T4	STMicroelectronics	40	120	4.6 @ 50A, 10V	150 @ 10V	5100 @ 25V	300	D2PAK (TO-263-3)	Active	Yes
BUK765R2-40B,118	NXP USA Inc.	40	75	5.2 @ 25A, 10V	52 @ 10V	3789 @ 25V	203	D2PAK (TO-263-3)	Active	Yes
FDB8444	Fairchild Semiconductor	40	70	5.5 @ 70A, 10V	128 @ 10V	8035 @ 25V	167	TO-263 (D2PAK)	Active	No
IPB015N04LGATMA1	Infineon Technologies	40	120	1.5 @ 100A, 10V	346 @ 10V	28000 @ 25V	250	PG-TO263-3	Not For New Designs	No
IPB015N04NGATMA1	Infineon Technologies	40	120	1.5 @ 100A, 10V	250 @ 10V	20000 @ 20V	250	PG-TO263-3	Active	No
IRF1404STRLPBF	Infineon Technologies	40	162	4.0 @ 95A, 10V	200 @ 10V	7360 @ 25V	200	D2PAK (TO-263-3)	Active	No
IRF1404ZSTRLPBF	Infineon Technologies	40	180	3.7 @ 75A, 10V	150 @ 10V	4340 @ 25V	200	PG-TO263-3	Active	No
IRF2204SPBF	Infineon Technologies	40	170	3.6 @ 130A, 10V	200 @ 10V	5890 @ 25V	200	D2PAK (TO-263-3)	Obsolete	No
IRF2804STRL7PP	Infineon Technologies	40	160	1.6 @ 160A, 10V	260 @ 10V	6930 @ 25V	330	D2PAK (7-Lead, TO-263-7)	Active	No
IRF2804STRLPBF	Infineon Technologies	40	75	2.0 @ 75A, 10V	240 @ 10V	6450 @ 25V	300	D2PAK (TO-263-3)	Active	No
IRF2805STRLPBF	Infineon Technologies	55	135	4.7 @ 104A, 10V	230 @ 10V	5110 @ 25V	200	D2PAK (TO-263-3)	Obsolete	No

Engineering Selection Recommendations

Primary Substitutes (40V Class, 120A+ Rating, Active Status):

The IPB015N04NGATMA1 (Infineon OptiMOS™) is the most direct functional equivalent. It maintains 40V Vdss, 120A continuous drain current, and Active product status. The superior on-state resistance (1.5 mOhm versus 4.6 mOhm) provides improved thermal performance and reduced power dissipation. The PG-TO263-3 package is mechanically compatible with D2PAK footprints. This part is suitable for new designs requiring equivalent or enhanced performance.

The IRF1404ZSTRLPBF (Infineon HEXFET®) offers 40V Vdss with 180A continuous drain current and Active status. The lower on-state resistance (3.7 mOhm) and reduced gate charge (150 nC, matching the main part) make this suitable for applications requiring higher current headroom. The PG-TO263-3 package is compatible with standard D2PAK layouts.

Secondary Substitutes (40V Class, Lower Current Rating):

The BUK765R2-40B,118 (NXP TrenchMOS™) operates at 40V with 75A continuous drain current. This part is suitable only for applications where the load current does not exceed 75A. The lower power dissipation rating (203W) indicates reduced thermal capability. Active status and AEC-Q101 qualification support automotive applications.

The IRF2804STRLPBF (Infineon HEXFET®) provides 40V Vdss with 75A continuous drain current and 300W power dissipation. This part matches the thermal rating of the main device but supports only 75A continuous current. Active status makes it suitable for current-limited applications.

Not Recommended:

The FDB8444 (Fairchild PowerTrench®) lacks AEC-Q101 qualification, making it unsuitable for automotive applications where the main part is specified.

The IRF2204SPBF is Obsolete and should not be selected for new designs.

The IRF2805STRLPBF operates at 55V, exceeding the 40V specification and introducing unnecessary design margin. Obsolete status further restricts its use.

The IPB015N04LGATMA1 carries Not For New Designs status and should be used only for legacy system support.

Frequently Asked Questions (FAQ)

Q: Can I use a 55V rated MOSFET as a substitute for the 40V STB100NF04T4?

A: No. The IRF2805STRLPBF and similar 55V devices operate on different die geometry and have different electrical characteristics. Using a higher voltage device introduces unnecessary design margin and may alter circuit performance. The 40V rating is a design specification that should be maintained.

Q: What is the difference between D2PAK and PG-TO263-3 packages?

A: Both designations refer to the same physical package form factor (TO-263-3). The PG-TO263-3 designation is used by some manufacturers to indicate their specific package variant. The packages are mechanically and electrically compatible for PCB mounting purposes.

Q: Why does the IPB015N04NGATMA1 have lower on-state resistance than the STB100NF04T4?

A: Lower on-state resistance (Rds On) reflects improved semiconductor die design and manufacturing process technology. The IPB015N04NGATMA1 uses Infineon's OptiMOS™ technology, which achieves lower resistance at the same voltage and current rating. This results in reduced power dissipation and improved thermal performance.

Q: Can I substitute a part with lower continuous drain current rating?

A: No. Parts with lower current ratings (such as the 75A BUK765R2-40B,118) cannot safely handle the full 120A load of the original design. Exceeding the rated continuous current causes excessive junction temperature rise and device failure.

Q: Is the IRF2804STRL7PP (7-Lead variant) compatible with the standard D2PAK footprint?

A: The IRF2804STRL7PP uses a D2PAK (7-Lead) package, which differs from the standard D2PAK (3-Lead) footprint. PCB layout modifications are required to accommodate the additional leads. This part is not a direct drop-in replacement without design changes.

Q: What does AEC-Q101 qualification mean?

A: AEC-Q101 is an automotive industry standard qualification that certifies component reliability under automotive operating conditions, including temperature cycling, vibration, and humidity exposure. Components with this qualification are approved for use in automotive applications.

Q: Why is the gate charge (Qg) parameter important for substitution?

A: Gate charge affects the switching speed and driver circuit requirements. Higher gate charge (such as the 346 nC of IPB015N04LGATMA1) requires more driver current and increases switching losses. Lower gate charge reduces driver stress but does not prevent functional substitution.

Q: Can I use an Obsolete part as a substitute?

A: Obsolete parts should be used only for legacy system maintenance or existing inventory management. For new designs, Active status parts are required to ensure long-term availability and manufacturer support.

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