STB100NF03L-03-1 Equivalent & Substitute Parts

Part Overview

The STB100NF03L-03-1 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 100A continuous drain current in a Through Hole I2PAK package. This device is part of the STripFET™ III series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for ongoing design support and production continuity.

Substiute Parts

STB100NF03L-03-1
STMicroelectronicsIn Stock: 3233STB100NF03L-03-1 Datasheet
STB100NF03L-03-1
Current Part
IRF1404LPBF
Infineon TechnologiesIn Stock: 688124IRF1404LPBF Datasheet
IRF1404LPBF
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 5V
Vgs (Max) ±16 V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 25V
Power Dissipation (Max) 300 W (Tc)
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the STB100NF03L-03-1 is determined by compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Technology: MOSFET (Metal Oxide) construction required
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 30V rating
  • Continuous Drain Current (Id): Substitute must equal or exceed 100A at 25°C
  • On-State Resistance (Rds On): Substitute performance must be compatible with circuit requirements
  • Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching characteristics
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole configuration required
  • Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA compatible footprints
  • Pin configuration: Three-terminal device (Gate, Drain, Source)

Compliance Criteria:

  • RoHS3 Compliance required
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) preferred
  • REACH Status: REACH Unaffected preferred

The IRF1404LPBF meets these substitution criteria with enhanced electrical performance characteristics while maintaining mechanical and compliance compatibility.

Parameter Comparison

Parameter STB100NF03L-03-1 IRF1404LPBF Unit
Manufacturer STMicroelectronics Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 40 V
Current - Continuous Drain (Id) @ 25°C 100 162 A (Tc)
Rds On (Max) @ Id, Vgs 3.2 @ 50A, 10V 4 @ 95A, 10V mOhm
Vgs(th) (Max) @ Id 2.5 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 88 @ 5V 200 @ 10V nC
Vgs (Max) ±16 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 6200 @ 25V 7360 @ 25V pF
Power Dissipation (Max) 300 (Tc) 200 (Tc) W
Operating Temperature -55 to 175 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: IRF1404LPBF

The IRF1404LPBF is the qualified substitute for the obsolete STB100NF03L-03-1. Selection is based on the following factors:

Product Status Alignment: The IRF1404LPBF holds Active product status from Infineon Technologies, ensuring ongoing availability, technical support, and manufacturing continuity. The STB100NF03L-03-1 is classified as Obsolete, making the IRF1404LPBF the appropriate long-term replacement.

Electrical Performance: The IRF1404LPBF exceeds the minimum electrical requirements of the STB100NF03L-03-1. With a 40V Vdss rating (versus 30V), it provides enhanced voltage margin. The 162A continuous drain current capability (versus 100A) delivers superior current handling capacity. Both devices operate across the identical temperature range (-55°C to 175°C TJ).

Mechanical Compatibility: Both devices utilize Through Hole mounting in compatible TO-262-3 Long Leads, I2PAK, and TO-262AA package configurations, ensuring direct footprint compatibility on existing printed circuit boards.

Compliance and Certification: Both the STB100NF03L-03-1 and IRF1404LPBF maintain ROHS3 Compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. No compliance barriers exist for substitution.

Circuit Integration Considerations: The IRF1404LPBF exhibits higher gate charge (200 nC @ 10V versus 88 nC @ 5V) and higher input capacitance (7360 pF @ 25V versus 6200 pF @ 25V). Gate drive circuits must accommodate these increased capacitive loads. The IRF1404LPBF gate threshold voltage is 4V @ 250µA (versus 2.5V), requiring verification that gate drive voltage levels remain adequate for the application.

Frequently Asked Questions (FAQ)

Q: Can the IRF1404LPBF be used as a direct replacement for the STB100NF03L-03-1 without circuit modifications?

A: The IRF1404LPBF is mechanically and electrically compatible for direct substitution in most applications. However, gate drive circuit verification is required. The IRF1404LPBF has a higher gate threshold voltage (4V versus 2.5V) and higher gate charge (200 nC versus 88 nC). Confirm that existing gate drive voltage and current capabilities are sufficient for the IRF1404LPBF specifications.

Q: What are the key electrical differences between these two devices?

A: The IRF1404LPBF provides higher voltage rating (40V versus 30V), higher current capability (162A versus 100A), and higher gate charge (200 nC versus 88 nC). The STB100NF03L-03-1 has lower on-state resistance at its rated current (3.2 mOhm @ 50A, 10V versus 4 mOhm @ 95A, 10V for the IRF1404LPBF). Both devices operate across the same temperature range and share identical compliance certifications.

Q: Are the packages physically identical?

A: Both devices use Through Hole mounting in TO-262-3 Long Leads, I2PAK, and TO-262AA compatible packages. Pin configuration and footprint are identical, allowing direct board-level substitution without layout modifications.

Q: What is the product status difference, and why does it matter?

A: The STB100NF03L-03-1 is classified as Obsolete, indicating STMicroelectronics has discontinued production and support. The IRF1404LPBF maintains Active status from Infineon Technologies, ensuring continued availability, technical documentation updates, and manufacturing support for future production runs.

Q: Do both devices meet the same compliance standards?

A: Yes. Both the STB100NF03L-03-1 and IRF1404LPBF are ROHS3 Compliant, carry Moisture Sensitivity Level 1 (Unlimited), and hold REACH Unaffected status. No compliance barriers exist for substitution in regulated applications.

Q: How do the gate drive requirements differ?

A: The IRF1404LPBF requires higher gate charge delivery (200 nC @ 10V versus 88 nC @ 5V) and has a higher gate threshold voltage (4V versus 2.5V). Gate drive circuits must deliver sufficient current to charge the higher capacitance within acceptable switching time windows. Verify gate drive voltage levels remain above 4V for reliable switching performance.

Q: Can the IRF1404LPBF handle the same power dissipation as the STB100NF03L-03-1?

A: The STB100NF03L-03-1 is rated for 300W (Tc) power dissipation, while the IRF1404LPBF is rated for 200W (Tc). In applications requiring sustained power dissipation above 200W, thermal management and circuit design must be re-evaluated. For most switching applications, the IRF1404LPBF thermal performance is adequate.

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