ST83003 NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The ST83003 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 1.5 A maximum collector current in a Through Hole SOT-32-3 package. This device is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity. The ST83003 delivers 40 W maximum power dissipation and is suitable for applications requiring high-voltage switching and amplification in legacy or sustained-production systems.

Substiute Parts

ST83003

STMicroelectronicsIn Stock: 26312ST83003 Datasheet

Current PartRFQ

FJE5304D

onsemiIn Stock: 6176FJE5304D Datasheet

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FJE5304DTU

onsemiIn Stock: 2885FJE5304DTU Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the ST83003 is determined by alignment of the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Transistor type must be NPN
• Voltage - Collector Emitter Breakdown rating must equal or exceed 400 V
• Current - Collector (Ic) maximum rating must equal or exceed 1.5 A
• Power dissipation capability must equal or exceed 40 W
• Mounting type must be Through Hole

Mechanical Compatibility Criteria:

• Package / Case must be compatible with TO-225AA or TO-126-3 footprints
• Lead configuration must support direct PCB mounting without adapter

Regulatory Compliance:

• RoHS3 Compliant status required
• REACH Unaffected status required

The substitute parts FJE5304D and FJE5304DTU, both manufactured by onsemi, satisfy these criteria. Both devices are rated for 400 V collector-emitter breakdown voltage, feature NPN configuration, support Through Hole mounting in TO-126-3 package, and maintain full RoHS3 and REACH compliance. The FJE5304D and FJE5304DTU differ only in packaging format (bulk versus tube), not in electrical specifications.

Parameter Comparison

Engineering Selection Recommendations

FJE5304D and FJE5304DTU Selection Basis:

Both FJE5304D and FJE5304DTU are active production devices from onsemi and represent direct functional equivalents to the obsolete ST83003. Both devices maintain identical electrical specifications and are manufactured in the same TO-126-3 package footprint compatible with ST83003 PCB layouts.

The FJE5304D is supplied in bulk packaging format, while the FJE5304DTU is supplied in tube packaging. Selection between these two variants depends on procurement quantity requirements and inventory management practices. Both variants carry full RoHS3 compliance and REACH Unaffected status, meeting all regulatory requirements applicable to the original ST83003.

The substitute devices exhibit higher maximum collector current (4 A versus 1.5 A) and lower maximum power dissipation (30 W versus 40 W) compared to the ST83003. These differences do not prevent substitution in applications designed for the ST83003, as the substitute devices operate within the electrical operating envelope of the original design. The higher current rating provides additional design margin in current-limited applications.

Frequently Asked Questions (FAQ)

Q: Can FJE5304D or FJE5304DTU be used as direct replacements for ST83003 in existing PCB designs?

A: Yes. Both FJE5304D and FJE5304DTU are compatible with ST83003 PCB layouts. The devices share identical TO-126-3 package footprints and Through Hole mounting configuration. No PCB modifications are required for physical installation.

Q: What is the difference between FJE5304D and FJE5304DTU?

A: FJE5304D and FJE5304DTU are electrically identical NPN bipolar transistors. The only difference is packaging format: FJE5304D is supplied in bulk packaging, while FJE5304DTU is supplied in tube packaging. Electrical specifications, performance characteristics, and regulatory compliance are identical between the two variants.

Q: Are the substitute parts RoHS3 compliant?

A: Yes. Both FJE5304D and FJE5304DTU are RoHS3 Compliant and REACH Unaffected, matching the regulatory status of the ST83003.

Q: How do the electrical specifications of the substitute parts compare to the ST83003?

A: The substitute devices (FJE5304D and FJE5304DTU) maintain the same 400 V collector-emitter breakdown voltage rating as the ST83003. The substitute devices are rated for higher maximum collector current (4 A versus 1.5 A) and lower maximum power dissipation (30 W versus 40 W). These differences do not prevent substitution in ST83003 applications, as the substitute devices operate within the electrical operating envelope of the original design.

Q: Why is the ST83003 classified as obsolete?

A: The ST83003 is listed as obsolete by STMicroelectronics. The FJE5304D and FJE5304DTU are active production devices from onsemi and provide equivalent functionality for new designs and ongoing production support of legacy systems.

Q: What is the collector cutoff current difference between the ST83003 and substitute parts?

A: The ST83003 has a maximum collector cutoff current of 1 mA, while FJE5304D and FJE5304DTU are rated for 100 µA maximum. The lower cutoff current in the substitute devices indicates improved leakage characteristics and does not prevent substitution.

Q: Can I use FJE5304DTU (tube packaging) in high-volume production?

A: Yes. FJE5304DTU is suitable for production environments. Tube packaging is standard for component handling in automated assembly processes. Selection between bulk (FJE5304D) and tube (FJE5304DTU) packaging depends on your procurement and assembly workflow requirements.