ST5027 Equivalent & Substitute Parts

Part Overview

The ST5027 is an NPN bipolar junction transistor (BJT) manufactured by STMicroelectronics, rated for 800 V collector-emitter breakdown voltage and 3 A maximum collector current in a Through Hole TO-220-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The ST5027 delivers 90 W maximum power dissipation and is suitable for high-voltage switching and amplification applications requiring robust thermal management in the TO-220 form factor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	800	V
Current - Collector (Ic) (Max)	3	A
Power - Max	90	W
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the ST5027 are qualified based on matching the following critical electrical and mechanical parameters:

Transistor Type: NPN configuration
Voltage Rating: 800 V collector-emitter breakdown voltage (VCEO)
Current Rating: 3 A maximum collector current (Ic)
Package: TO-220-3 Through Hole form factor
Compliance: ROHS3 compliance and REACH unaffected status

The substitute parts FJP5027OTU and KSC5603DTU both satisfy these core requirements. Differences in maximum power dissipation (50 W and 100 W respectively), transition frequency, and saturation voltage characteristics represent secondary performance variations that do not preclude functional substitution within the defined electrical envelope.

Parameter Comparison

Parameter	ST5027	FJP5027OTU	KSC5603DTU	Unit
Manufacturer	STMicroelectronics	onsemi	onsemi	—
Transistor Type	NPN	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	800	800	800	V
Current - Collector (Ic) (Max)	3	3	3	A
Power - Max	90	50	100	W
Frequency - Transition	—	15	5	MHz
Vce Saturation (Max) @ Ib, Ic	—	2V @ 300mA, 1.5A	2.5V @ 200µA, 1A	V
DC Current Gain (hFE) (Min) @ Ic, Vce	—	20 @ 200mA, 5V	20 @ 400mA, 3V	—
Current - Collector Cutoff (Max)	—	10µA (ICBO)	100µA	—
Operating Temperature (TJ)	—	150	150	°C
Mounting Type	Through Hole	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	TO-220-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Active	Active	—

Engineering Selection Recommendations

Both FJP5027OTU and KSC5603DTU are active production alternatives to the obsolete ST5027. Selection between these substitutes depends on application-specific thermal and frequency requirements:

FJP5027OTU is suitable for applications where transition frequency of 15 MHz is acceptable and thermal dissipation does not exceed 50 W. This part offers lower collector cutoff current (10µA) and is available in higher inventory quantities (32,563 pcs).

KSC5603DTU is appropriate for applications requiring maximum power dissipation up to 100 W, accommodating higher thermal loads. The 5 MHz transition frequency and higher collector cutoff current (100µA) represent trade-offs against increased power handling capability. Inventory availability is lower (2,306 pcs).

Both substitutes maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original ST5027 specification. The TO-220-3 package geometry is identical across all three parts, permitting direct mechanical interchange without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can FJP5027OTU or KSC5603DTU be used as direct replacements for ST5027 in existing designs?

A: Yes. Both substitute parts match the critical electrical parameters (800 V VCEO, 3 A Ic) and package form factor (TO-220-3). Thermal design margins must be verified if the original design utilized the full 90 W capability of the ST5027, as FJP5027OTU is rated for 50 W maximum.

Q: What is the primary difference between FJP5027OTU and KSC5603DTU?

A: The primary differences are maximum power dissipation (50 W versus 100 W), transition frequency (15 MHz versus 5 MHz), and collector cutoff current (10µA versus 100µA). Application frequency response and thermal requirements determine the appropriate selection.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use the TO-220-3 Through Hole package with identical pinout and mechanical dimensions. PCB footprints and thermal interface requirements remain unchanged.

Q: Do the substitute parts meet the same compliance standards as ST5027?

A: Yes. Both FJP5027OTU and KSC5603DTU are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original ST5027.

Q: Which substitute part should be selected for high-frequency switching applications?

A: FJP5027OTU, with a 15 MHz transition frequency, is better suited for higher-frequency switching applications compared to KSC5603DTU at 5 MHz.

Q: Which substitute part should be selected for high-power dissipation applications?

A: KSC5603DTU, rated for 100 W maximum power dissipation, is appropriate for applications requiring thermal performance beyond the 50 W capability of FJP5027OTU.

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