ST13007 Equivalent & Substitute Parts

Part Overview

The ST13007 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current. This device is packaged in TO-220-3 through-hole configuration with a maximum power dissipation of 80 W. The ST13007 is classified as an active product and is ROHS3 compliant.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging or thermal characteristics are required, or when design flexibility across multiple suppliers is needed for production continuity.

Substiute Parts

ST13007

STMicroelectronicsIn Stock: 1296ST13007 Datasheet

Current PartRFQ

MJE13007

NTE Electronics, IncIn Stock: 2206MJE13007 Datasheet

DirectRFQ

MJE13007G

onsemiIn Stock: 3397MJE13007G Datasheet

DirectRFQ

FJP13007H2TU

onsemiIn Stock: 3528FJP13007H2TU Datasheet

SimilarRFQ

MJE18008G

onsemiIn Stock: 8170MJE18008G Datasheet

SimilarRFQ

PHE13007,127

WeEn SemiconductorsIn Stock: 5370PHE13007,127 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ST13007 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 400 V minimum
• Current - Collector (Ic) (Max): 8 A minimum
• Power - Max: 80 W minimum
• Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A or lower
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V or higher
• Package / Case: TO-220-3
• Mounting Type: Through Hole
• Operating Temperature (Max): 150°C or higher
• RoHS Status: ROHS3 Compliant

Direct Equivalents meet all primary criteria with identical electrical specifications and packaging.

Similar Substitutes meet the core electrical requirements but may differ in secondary parameters such as transition frequency, current cutoff characteristics, or DC current gain specifications. These parts are suitable for applications where the primary part is unavailable.

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalents (Preferred for Drop-In Replacement):

MJE13007 (NTE Electronics, Inc) and MJE13007G (onsemi) are direct electrical equivalents to the ST13007. Both devices maintain identical maximum ratings for voltage, current, power, and saturation characteristics. Both are ROHS3 compliant and active products. MJE13007G is supplied in tube packaging, matching the ST13007 packaging format. MJE13007 is supplied in bag packaging. Selection between these two should be based on packaging requirements and supplier availability.

Similar Substitutes (Acceptable for Functional Equivalence):

FJP13007H2TU (onsemi) meets all core electrical requirements but carries a Last Time Buy product status, indicating this part is being discontinued. This device exhibits higher DC current gain (26 @ 2A, 5V) compared to the ST13007 (5 @ 5A, 5V), which may affect circuit biasing characteristics in applications sensitive to current gain variation. FJP13007H2TU is suitable only for applications where supply continuity is not critical.

MJE18008G (onsemi) provides enhanced performance characteristics with 450 V breakdown voltage (50 V higher than ST13007) and 125 W maximum power dissipation (45 W higher than ST13007). This device is suitable for applications requiring higher voltage or thermal margin. MJE18008G exhibits lower saturation voltage (700mV @ 900mA, 4.5V) compared to ST13007 (3V @ 2A, 8A), resulting in reduced power dissipation during saturation.

PHE13007,127 (WeEn Semiconductors) meets all core electrical requirements with identical voltage and current ratings. This device exhibits lower saturation voltage (350mV @ 1A, 5A) and higher DC current gain (8 @ 2A, 5V) compared to the ST13007, providing improved switching efficiency. PHE13007,127 is an active product with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can MJE13007 be used as a direct replacement for ST13007?

A: Yes. MJE13007 is a direct electrical equivalent with identical maximum ratings for collector-emitter breakdown voltage (400 V), collector current (8 A), power dissipation (80 W), and saturation characteristics. Both devices are ROHS3 compliant and active products. The primary difference is packaging format: MJE13007 is supplied in bag packaging while ST13007 is supplied in tube packaging.

Q: What is the difference between MJE13007 and MJE13007G?

A: MJE13007 is manufactured by NTE Electronics, Inc and supplied in bag packaging. MJE13007G is manufactured by onsemi and supplied in tube packaging. Both devices are electrical equivalents with identical specifications. Selection should be based on packaging preference and supplier availability.

Q: Is FJP13007H2TU suitable for long-term production use?

A: FJP13007H2TU carries a Last Time Buy product status, indicating the manufacturer is discontinuing this part. This device is not recommended for new designs or applications requiring long-term supply continuity. FJP13007H2TU may be used only in applications where existing inventory is sufficient or where supply interruption is acceptable.

Q: When should MJE18008G be selected instead of ST13007?

A: MJE18008G should be selected when the application requires higher voltage margin (450 V vs. 400 V) or higher power dissipation capability (125 W vs. 80 W). MJE18008G also provides lower saturation voltage, reducing power loss during saturation. MJE18008G is suitable for high-power switching applications or designs operating near the voltage limits of the ST13007.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All substitute parts listed use TO-220-3 package configuration with through-hole mounting. PCB footprints are mechanically compatible. However, PHE13007,127 uses TO-220AB supplier device package designation, which may have minor lead spacing variations. Verify lead dimensions against PCB design specifications before assembly.

Q: What is the significance of DC Current Gain (hFE) differences between substitute parts?

A: DC Current Gain affects base current requirements for saturation. ST13007 specifies 5 @ 5A, 5V. FJP13007H2TU specifies 26 @ 2A, 5V, indicating higher gain at lower collector current. PHE13007,127 specifies 8 @ 2A, 5V. Higher current gain reduces base drive requirements but may affect circuit biasing if the design assumes specific gain characteristics. Verify base circuit design compatibility when substituting parts with different hFE specifications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant, meeting environmental and hazardous substance restrictions. All parts are suitable for applications requiring ROHS compliance.

Q: What is the operating temperature range for each substitute part?

A: ST13007, FJP13007H2TU, and PHE13007,127 specify maximum operating temperature of 150°C. MJE13007 and MJE13007G specify operating temperature range of -65°C to 150°C, providing extended low-temperature operation capability. MJE18008G specifies operating temperature range of -65°C to 150°C. For applications requiring operation below 0°C, select MJE13007, MJE13007G, or MJE18008G.