SST201-T1-E3 JFET N-Channel Equivalent & Substitute Parts

Part Overview

The SST201-T1-E3 is a JFET N-Channel 40 V 350 mW Surface Mount transistor manufactured by Vishay Siliconix in SOT-23 packaging. This part is classified as obsolete, making substitute components necessary for new designs and ongoing production requirements. The SST201-T1-E3 serves applications requiring low-power N-channel JFET functionality with 40 V breakdown voltage rating and moderate drain current capability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Voltage - Breakdown (V(BR)GSS)	40	V
Current - Drain (Idss) @ Vds (Vgs=0)	200 µA @ 15 V	—
Voltage - Cutoff (VGS off) @ Id	300 mV @ 10 nA	—
Input Capacitance (Ciss) (Max) @ Vds	4.5 pF @ 15 V	—
Power - Max	350	mW
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the SST201-T1-E3 is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (required match)
Voltage - Breakdown (V(BR)GSS): 40 V minimum (system voltage compatibility)
Package / Case: TO-236-3, SC-59, SOT-23-3 (physical and electrical compatibility)
Power - Max: 350 mW or greater (thermal capability)
Operating Temperature Range: -55°C to 150°C (environmental compatibility)
RoHS Status: ROHS3 Compliant (regulatory requirement)

Secondary Compatibility Parameters:

Current - Drain (Idss) @ Vds (Vgs=0): Determines gate leakage and biasing characteristics
Voltage - Cutoff (VGS off) @ Id: Defines threshold voltage behavior
Input Capacitance (Ciss): Affects switching speed and circuit performance

Substitute parts are grouped into two categories based on electrical performance alignment with the SST201-T1-E3:

Group A - Direct Parameter Match: Parts with Idss and VGS(off) characteristics closely aligned to the original specification, suitable for direct replacement in existing designs.

Group B - Functional Equivalents: Parts meeting all critical substitution criteria with variations in secondary parameters, requiring circuit evaluation for specific applications.

Parameter Comparison

Part Number	Manufacturer	V(BR)GSS (V)	Idss @ Vds (µA)	VGS(off) @ Id	Ciss (pF)	Power Max (mW)	Temp Range (°C)	Product Status
SST201-T1-E3	Vishay Siliconix	40	200 @ 15 V	300 mV @ 10 nA	4.5 @ 15 V	350	-55 to 150	Obsolete
MMBFJ201	onsemi	40	200 @ 20 V	300 mV @ 10 nA	—	350	-55 to 150	Active
MMBFJ202	onsemi	40	900 @ 20 V	800 mV @ 10 nA	—	350	-55 to 150	Active
MMBF5103	onsemi	40	10000 @ 15 V	1.2 V @ 1 nA	16 @ 15 V	350	-55 to 150	Active
BSR57	onsemi	40	20000 @ 15 V	2 V @ 0.5 nA	—	250	-55 to 150	Active
BSR58	onsemi	40	8000 @ 15 V	800 mV @ 0.5 nA	—	250	-55 to 150	Active
2SK545-11D-TB-E	onsemi	40	60 @ 10 V	1.5 V @ 1 µA	1.7 @ 10 V	125	—	Obsolete
2SK209-GR(TE85L,F)	Toshiba Semiconductor and Storage	50	14000 @ 10 V	1.5 V @ 100 nA	13 @ 10 V	150	-55 to 125	Active

Engineering Selection Recommendations

Primary Recommendation - Group A (Direct Replacement):

MMBFJ201 is the preferred substitute for the SST201-T1-E3. This part matches the original specification in Idss (200 µA) and VGS(off) (300 mV), ensuring equivalent gate leakage and threshold voltage characteristics. MMBFJ201 is active product status, ROHS3 compliant, and maintains the full operating temperature range (-55°C to 150°C). The part is available in high inventory (76,050 pcs), ensuring supply continuity.

Secondary Recommendation - Group A (Functional Equivalent):

MMBFJ202 provides functional equivalence with higher Idss (900 µA) and elevated VGS(off) (800 mV). This part is suitable for applications where increased drain current capability is acceptable. MMBFJ202 is active product status, ROHS3 compliant, and maintains the full operating temperature range. Inventory availability is high (80,300 pcs).

Alternative Recommendation - Group B (Conditional Substitution):

MMBF5103 meets all critical substitution criteria with 40 V breakdown voltage, 350 mW power rating, and full temperature range operation. This part exhibits higher Idss (10 mA) and elevated VGS(off) (1.2 V), requiring circuit evaluation for applications sensitive to gate leakage or threshold voltage variations. MMBF5103 is active product status with high inventory (9,400 pcs).

Not Recommended:

2SK209-GR(TE85L,F) exceeds the original 40 V specification with 50 V breakdown voltage and exhibits significantly higher Idss (14 mA). The maximum power rating is reduced to 150 mW, and the operating temperature range is limited to -55°C to 125°C. This part is suitable only for applications where higher voltage rating and increased current capability are required.

2SK545-11D-TB-E is obsolete product status with reduced power rating (125 mW) and incomplete operating temperature specification. This part is not recommended for new designs.

BSR57 and BSR58 exhibit substantially higher Idss values (20 mA and 8 mA respectively) and elevated VGS(off) characteristics, making them unsuitable for direct replacement in circuits designed for the SST201-T1-E3 gate leakage and threshold voltage specifications.

Frequently Asked Questions (FAQ)

Q: Can MMBFJ201 be used as a direct replacement for SST201-T1-E3 in existing designs?

A: Yes. MMBFJ201 matches the critical electrical parameters of the SST201-T1-E3, including Idss (200 µA @ 20 V vs. 200 µA @ 15 V) and VGS(off) (300 mV @ 10 nA). Both parts share identical 40 V breakdown voltage, 350 mW power rating, and full operating temperature range (-55°C to 150°C). Package compatibility is confirmed (TO-236-3, SC-59, SOT-23-3). No circuit modifications are required.

Q: What is the difference between MMBFJ201 and MMBFJ202?

A: Both parts meet the critical substitution criteria for the SST201-T1-E3. MMBFJ201 exhibits Idss of 200 µA and VGS(off) of 300 mV, matching the original specification. MMBFJ202 exhibits higher Idss (900 µA) and elevated VGS(off) (800 mV). Selection depends on application requirements for gate leakage and threshold voltage characteristics. MMBFJ201 is preferred for direct replacement; MMBFJ202 is suitable for applications tolerating higher drain current.

Q: Why is 2SK209-GR(TE85L,F) not recommended as a substitute?

A: 2SK209-GR(TE85L,F) exceeds the original 40 V specification with 50 V breakdown voltage. The maximum power rating is reduced to 150 mW compared to the original 350 mW. The operating temperature range is limited to -55°C to 125°C, excluding the upper 25°C of the original specification. These parameter variations require circuit evaluation and are not suitable for direct replacement.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts (MMBFJ201, MMBFJ202, MMBF5103, BSR57, BSR58) are ROHS3 compliant. 2SK545-11D-TB-E is also ROHS3 compliant but is obsolete product status. 2SK209-GR(TE85L,F) is ROHS3 compliant with active product status.

Q: What is the moisture sensitivity level (MSL) for substitute parts?

A: All substitute parts maintain MSL 1 (Unlimited) classification, matching the original SST201-T1-E3 specification. This indicates no moisture sensitivity restrictions for storage and handling.

Q: Can MMBF5103 be used in place of SST201-T1-E3?

A: MMBF5103 meets all critical substitution criteria (40 V breakdown voltage, 350 mW power rating, full temperature range, ROHS3 compliance, SOT-23-3 package). However, MMBF5103 exhibits significantly higher Idss (10 mA @ 15 V) and elevated VGS(off) (1.2 V @ 1 nA) compared to the original (200 µA and 300 mV respectively). Circuit evaluation is required to confirm compatibility with gate biasing and threshold voltage requirements.

Q: What inventory levels are available for substitute parts?

A: MMBFJ201 has 76,050 pcs in stock. MMBFJ202 has 80,300 pcs in stock. MMBF5103 has 9,400 pcs in stock. BSR57 has 7,080 pcs in stock. BSR58 has 42,300 pcs in stock. 2SK209-GR(TE85L,F) has 2,200 pcs in stock. All parts are classified as new original stock.

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