SSM6P36FE,LM Equivalent & Substitute Parts

Part Overview

The SSM6P36FE,LM is a dual P-channel MOSFET array manufactured by Toshiba Semiconductor and Storage, designed for surface mount applications in logic-level gate switching circuits. This component features a 20V drain-to-source voltage rating with 330mA continuous drain current capability and 150mW maximum power dissipation in a compact ES6 package configuration.

The SSM6P36FE,LM maintains Active product status. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity where the primary part may be unavailable or where alternative electrical characteristics better suit specific application requirements.

Substiute Parts

SSM6P36FE,LM
Toshiba Semiconductor and StorageIn Stock: 129180SSM6P36FE,LM Datasheet
SSM6P36FE,LM
Current Part
EM6J1T2R
Rohm SemiconductorIn Stock: 8530EM6J1T2R Datasheet
EM6J1T2R
Similar
PMDT670UPE,115
Nexperia USA Inc.In Stock: 9465PMDT670UPE,115 Datasheet
PMDT670UPE,115
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 330 mA
Rds On (Max) @ Id, Vgs 1.31 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1 V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 10V
Power - Max 150 mW
Operating Temperature (TJ) 150 °C
Configuration 2 P-Channel (Dual)
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the SSM6P36FE,LM are qualified based on the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Dual P-channel MOSFET configuration
  • 20V drain-to-source voltage rating (Vdss)
  • Logic level gate feature
  • Surface mount packaging (SOT-563 or SOT-666)
  • ROHS3 compliance and MSL 1 rating
  • Operating temperature range supporting 150°C junction temperature

Acceptable Parameter Variations:

  • Continuous drain current (Id): Substitute parts must meet or exceed 330mA at 25°C, or provide equivalent performance within the application's current requirements
  • On-resistance (Rds On): Substitute parts with lower Rds On values provide improved performance; higher values require application-level verification
  • Gate charge (Qg) and input capacitance (Ciss): Variations affect switching speed and gate drive requirements; substitutes with lower values improve efficiency
  • Maximum power dissipation: Substitute parts rated at 150mW or higher maintain thermal compatibility

Parameter Comparison

Parameter SSM6P36FE,LM (Toshiba) EM6J1T2R (Rohm) PMDT670UPE,115 (Nexperia)
Manufacturer Toshiba Semiconductor and Storage Rohm Semiconductor Nexperia USA Inc.
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 330mA 200mA 550mA
Rds On (Max) @ Id, Vgs 1.31Ohm @ 100mA, 4.5V 1.2Ohm @ 200mA, 4.5V 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA 1V @ 100µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4V 1.4nC @ 4.5V 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V 115pF @ 10V 87pF @ 10V
Power - Max 150mW 150mW 330mW
Operating Temperature (TJ) 150°C 150°C -55°C ~ 150°C
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package ES6 EMT6 SOT-666
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Not For New Designs

Engineering Selection Recommendations

SSM6P36FE,LM (Toshiba) — Primary Part

The SSM6P36FE,LM maintains Active product status and is suitable for new designs. This part provides the baseline electrical characteristics and should be selected for new applications where supply availability permits.

EM6J1T2R (Rohm Semiconductor) — Recommended Substitute

The EM6J1T2R is an Active product suitable for new designs. This substitute is compatible with the SSM6P36FE,LM in applications where continuous drain current requirements do not exceed 200mA. The EM6J1T2R features comparable on-resistance (1.2Ohm) and lower gate charge (1.4nC), making it suitable for logic-level switching applications with reduced gate drive requirements. The higher input capacitance (115pF) requires verification in high-frequency switching circuits.

PMDT670UPE,115 (Nexperia USA Inc.) — Limited Substitute

The PMDT670UPE,115 carries a "Not For New Designs" product status and is not recommended for new design implementations. This part is retained in the substitute list for legacy system support and repair applications only. The PMDT670UPE,115 offers superior electrical performance with 550mA continuous drain current, lower on-resistance (850mOhm), and higher power rating (330mW). It includes automotive-grade qualification (AEC-Q101) and extended temperature range (-55°C ~ 150°C). Use of this part in new designs requires explicit engineering justification and supply chain confirmation.

Frequently Asked Questions (FAQ)

Q: Can the EM6J1T2R replace the SSM6P36FE,LM in all applications?

A: The EM6J1T2R is compatible with the SSM6P36FE,LM when the application's continuous drain current requirement does not exceed 200mA. Both parts share identical voltage ratings (20V Vdss), logic-level gate configuration, and package options (SOT-563, SOT-666). Applications requiring continuous drain currents between 200mA and 330mA require evaluation of the specific circuit topology and thermal conditions.

Q: What is the significance of the "Not For New Designs" status of the PMDT670UPE,115?

A: The "Not For New Designs" designation indicates that Nexperia has discontinued active development and marketing of this part for new applications. While the PMDT670UPE,115 remains available in inventory and is electrically compatible, it should be used only in legacy system maintenance, repair, or where supply of the primary part is unavailable. New designs must use the SSM6P36FE,LM or EM6J1T2R.

Q: Are all three parts available in the same package options?

A: All three parts support SOT-563 and SOT-666 package options. The supplier device packages differ: SSM6P36FE,LM uses ES6, EM6J1T2R uses EMT6, and PMDT670UPE,115 uses SOT-666. These designations refer to the specific tape and reel or cut tape configurations; the physical package footprints remain compatible for PCB layout purposes.

Q: How do the on-resistance values affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and switching speed. The PMDT670UPE,115 features the lowest on-resistance at 850mOhm, resulting in reduced power loss and improved efficiency. The SSM6P36FE,LM and EM6J1T2R have higher on-resistance values (1.31Ohm and 1.2Ohm respectively), which increase power dissipation proportionally with drain current. Applications operating at maximum current ratings (330mA for SSM6P36FE,LM) require thermal analysis to ensure junction temperature remains within the 150°C limit.

Q: What is the impact of input capacitance differences on gate drive circuits?

A: Input capacitance (Ciss) affects the gate charge required for switching and the gate drive circuit design. The SSM6P36FE,LM has the lowest input capacitance at 43pF, requiring minimal gate drive current. The EM6J1T2R exhibits higher input capacitance at 115pF, necessitating increased gate drive capability. The PMDT670UPE,115 provides intermediate capacitance at 87pF. High-frequency switching applications (above 1MHz) are more sensitive to these differences and require gate drive circuit verification.

Q: Are all parts compliant with environmental and regulatory standards?

A: All three parts are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity ratings, and are REACH unaffected. The PMDT670UPE,115 includes additional automotive-grade qualification (AEC-Q101) with extended temperature range (-55°C ~ 150°C), making it suitable for automotive applications. The SSM6P36FE,LM and EM6J1T2R are rated to 150°C junction temperature and are suitable for industrial and consumer applications.

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