SSM3K7002BS,LF N-Channel 60V 200mA MOSFET Equivalent & Substitute Parts

Part Overview

The SSM3K7002BS,LF is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 60V drain-to-source voltage with 200mA continuous drain current at 25°C. The device is housed in a surface mount S-Mini package (TO-236-3/SC-59/SOT-23-3) and dissipates a maximum of 200mW. This part is classified as obsolete, making identification of functionally equivalent active alternatives necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	200	mA
Power Dissipation (Max)	200	mW
Rds On (Max) @ 500mA, 10V	2.1	Ohm
Vgs(th) (Max) @ 250µA	2.5	V
Vgs (Max)	±20	V
Input Capacitance (Ciss) @ 25V	17	pF
Operating Temperature (TJ)	150	°C
Package Type	TO-236-3 / SC-59 / SOT-23-3	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the SSM3K7002BS,LF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
FET Type: Must be N-Channel MOSFET
Package: Must be compatible with TO-236-3 / SC-59 / SOT-23-3 surface mount footprint
Continuous Drain Current (Id): Must support minimum 200mA at 25°C
Mounting Type: Must be surface mount

Secondary Compatibility Factors:

Gate-Source Voltage (Vgs): ±20V maximum rating
Operating Temperature: Must support 150°C junction temperature
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for equivalent handling

All substitute parts listed below meet or exceed the primary substitution criteria. Differences in power dissipation, on-resistance, and gate charge reflect design improvements in active alternatives while maintaining functional compatibility within the specified electrical envelope.

Parameter Comparison

Parameter	SSM3K7002BS,LF (Main)	T2N7002AK,LM	2N7002BK,215	2N7002E-7-F	DMN62D0U-13	DMN63D1L-13	ZVN4106FTA
Manufacturer	Toshiba	Toshiba	Nexperia	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.
Vdss (V)	60	60	60	60	60	60	60
Id @ 25°C (mA)	200	200	350	250	380	380	200
Power Dissipation (mW)	200	320	370	370	380	370	350
Rds On @ 10V (Ohm)	2.1 @ 500mA	3.9 @ 100mA	1.6 @ 500mA	3.0 @ 250mA	2.0 @ 100mA	2.0 @ 500mA	2.5 @ 500mA
Vgs(th) @ 250µA (V)	2.5	2.1	2.1	2.5	1.0	2.5	3.0
Vgs (Max) (V)	±20	±20	±20	±20	±20	±20	±20
Ciss @ 25V (pF)	17 @ 25V	17 @ 10V	50 @ 10V	50 @ 25V	32 @ 30V	30 @ 25V	35 @ 25V
Operating Temp (°C)	150	150	150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-23-3	SOT-23-3	TO-236AB	SOT-23-3	SOT-23-3	SOT-23-3	SOT-23-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	—	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
REACH Status	—	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected

Engineering Selection Recommendations

T2N7002AK,LM (Toshiba) Select this substitute when maintaining Toshiba device ecosystem is preferred. This part is active and ROHS3 compliant. Power dissipation is increased to 320mW, providing thermal margin over the original 200mW specification. Rds On is higher at 3.9Ohm (100mA, 10V) compared to the main part's 2.1Ohm, resulting in slightly higher conduction losses. Gate threshold voltage is lower at 2.1V, enabling faster switching response. Suitable for applications where Toshiba supply chain continuity is required.

2N7002BK,215 (Nexperia) Select this substitute for applications requiring automotive-grade qualification. This part carries AEC-Q101 qualification and is active with ROHS3 compliance. Continuous drain current is rated at 350mA, exceeding the original 200mA specification. On-resistance is superior at 1.6Ohm (500mA, 10V), reducing conduction losses. Power dissipation is 370mW. Input capacitance is higher at 50pF, which may affect switching speed in high-frequency applications. Recommended for automotive and mission-critical applications.

2N7002E-7-F (Diodes Incorporated) Select this substitute for general-purpose replacement with extended temperature range. This part is active and ROHS3 compliant with operating temperature from -55°C to 150°C. Continuous drain current is 250mA, exceeding the original 200mA. On-resistance is 3.0Ohm (250mA, 10V). Power dissipation is 370mW. Gate charge is low at 0.22nC, supporting efficient switching. Suitable for consumer and industrial applications requiring temperature flexibility.

DMN62D0U-13 (Diodes Incorporated) Select this substitute when higher current capability and lower gate threshold are required. This part is active and ROHS3 compliant with extended temperature range (-55°C to 150°C). Continuous drain current is 380mA. Gate threshold voltage is lowest at 1.0V (250µA), enabling operation with lower gate drive voltages. On-resistance is 2.0Ohm (100mA, 4.5V). Power dissipation is 380mW. Input capacitance is moderate at 32pF. Suitable for low-voltage gate drive applications.

DMN63D1L-13 (Diodes Incorporated) Select this substitute for high-volume applications with extended temperature range. This part is active and ROHS3 compliant with operating temperature from -55°C to 150°C. Continuous drain current is 380mA. On-resistance is 2.0Ohm (500mA, 10V), matching the main part's performance. Power dissipation is 370mW. Gate charge is low at 0.3nC. Input capacitance is 30pF. Supplied in Tape & Reel packaging for automated assembly. Suitable for high-volume production environments.

ZVN4106FTA (Diodes Incorporated) Select this substitute for direct current-matched replacement. This part is active and ROHS3 compliant with extended temperature range (-55°C to 150°C). Continuous drain current is 200mA, matching the original specification exactly. On-resistance is 2.5Ohm (500mA, 10V). Power dissipation is 350mW. Gate threshold voltage is 3.0V (1mA), requiring higher gate drive voltage. Input capacitance is 35pF. Suitable for applications where current rating must remain unchanged.

Frequently Asked Questions (FAQ)

Q: Can the SSM3K7002BS,LF be directly replaced with any of these substitutes?

A: All listed substitutes are electrically compatible within the specified 60V, 200mA operating envelope. Physical footprint compatibility is confirmed for all parts in TO-236-3 / SC-59 / SOT-23-3 surface mount packages. However, differences in on-resistance, power dissipation, and gate threshold voltage may affect circuit performance. Verify that the substitute part's electrical characteristics are acceptable for your specific application before implementation.

Q: Why do some substitutes have higher continuous drain current ratings than the original 200mA?

A: Higher current ratings indicate improved semiconductor design and manufacturing processes. Parts such as 2N7002BK,215 (350mA), DMN62D0U-13 (380mA), and DMN63D1L-13 (380mA) provide additional current margin without requiring package changes. These devices can be used in applications rated for 200mA or lower without derating concerns. The higher ratings reflect modern device capability rather than a requirement to operate at elevated currents.

Q: What is the significance of on-resistance (Rds On) differences between parts?

A: On-resistance determines conduction losses during transistor operation. Lower Rds On values reduce power dissipation and heat generation. For example, 2N7002BK,215 has 1.6Ohm Rds On compared to the original 2.1Ohm, resulting in approximately 24% lower conduction losses at equivalent current levels. Higher Rds On values such as T2N7002AK,LM (3.9Ohm) or 2N7002E-7-F (3.0Ohm) increase conduction losses but may offer other advantages such as lower gate charge or improved switching characteristics.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All active substitute parts listed carry ROHS3 compliance certification. The original SSM3K7002BS,LF is obsolete and does not carry RoHS certification information. For new designs and procurement, all listed substitutes meet current environmental and regulatory requirements.

Q: What is the difference between gate threshold voltage (Vgs(th)) specifications?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the transistor on. Lower threshold voltages (such as DMN62D0U-13 at 1.0V) enable operation with lower gate drive voltages, reducing power consumption in gate drive circuits. Higher threshold voltages (such as ZVN4106FTA at 3.0V) require stronger gate drive signals but may provide improved noise immunity. Select based on your gate drive circuit capability and application requirements.

Q: Why do some parts have extended operating temperature ranges (-55°C to 150°C) while the original is rated only to 150°C?

A: Extended temperature ranges reflect modern device design and testing standards. Parts such as 2N7002E-7-F, DMN62D0U-13, DMN63D1L-13, and ZVN4106FTA are rated from -55°C to 150°C, providing operation in cold environments. The original SSM3K7002BS,LF specification lists only the maximum junction temperature of 150°C. For applications requiring low-temperature operation, select substitutes with extended temperature ranges.

Q: What is the importance of input capacitance (Ciss) in substitute selection?

A: Input capacitance affects switching speed and gate drive power requirements. Lower Ciss values enable faster switching transitions and reduce gate drive circuit power consumption. The original part has 17pF at 25V. Substitutes range from 17pF (T2N7002AK,LM) to 50pF (2N7002BK,215 and 2N7002E-7-F). For high-frequency switching applications, select parts with lower Ciss values. For low-frequency applications, Ciss differences are negligible.

Q: Is the 2N7002BK,215 suitable for automotive applications?

A: Yes. The 2N7002BK,215 carries AEC-Q101 automotive qualification and is the only substitute with explicit automotive-grade designation. This part is suitable for automotive and mission-critical applications requiring automotive-level reliability and qualification documentation.

Q: Can I use a substitute with higher power dissipation rating in a thermally constrained design?

A: Power dissipation rating indicates maximum allowable heat generation under specified conditions. A higher rating does not mean the device will generate more heat in your application. Actual power dissipation depends on on-resistance and operating current. For example, 2N7002BK,215 has 370mW rating but lower Rds On (1.6Ohm), potentially resulting in lower actual power dissipation than the original 200mW-rated part at equivalent currents. Verify actual power dissipation through circuit simulation or measurement.

Q: What packaging options are available for these substitutes?

A: All substitutes are available in surface mount SOT-23-3 or TO-236AB packages, compatible with the original S-Mini footprint. Most substitutes are available in Cut Tape (CT) & Digi-Reel® packaging for automated assembly. DMN63D1L-13 is supplied in Tape & Reel (TR) format. Verify packaging availability with your supplier for your specific procurement volume and assembly process requirements.

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