SSM3K35MFV(TPL3) Equivalent & Substitute Parts

Part Overview

The SSM3K35MFV(TPL3) is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 20V drain-to-source voltage with 180mA continuous drain current at 25°C. This device operates in the π-MOSVI series and is housed in a SOT-723 surface mount package. The part is currently in active production status with RoHS compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining surface mount compatibility and regulatory compliance. Alternative models may be required due to inventory availability, supply chain considerations, or design optimization for specific application requirements.

Substiute Parts

SSM3K35MFV(TPL3)

Toshiba Semiconductor and StorageIn Stock: 934SSM3K35MFV(TPL3) Datasheet

Current PartRFQ

SSM3K35AMFV,L3F

Toshiba Semiconductor and StorageIn Stock: 113814SSM3K35AMFV,L3F Datasheet

DirectRFQ

NTK3043NT5G

onsemiIn Stock: 27859NTK3043NT5G Datasheet

SimilarRFQ

RUM001L02T2CL

Rohm SemiconductorIn Stock: 705210RUM001L02T2CL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the SSM3K35MFV(TPL3) is determined by the following critical parameters:

Mandatory Matching Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Mounting Type: Surface Mount
• Package / Case: SOT-723 or equivalent footprint (VESM, VMT3)
• RoHS Compliance: Active production status with current regulatory compliance

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 180mA at 25°C
• Rds On (Max): Equal to or less than 3Ohm at specified gate voltage
• Vgs(th) (Max): Equal to or less than 1V at specified drain current
• Gate Voltage Range (Vgs): ±10V or greater
• Power Dissipation (Max): Equal to or greater than 150mW
• Operating Temperature: Minimum 150°C junction temperature

Substitute parts SSM3K35AMFV,L3F, NTK3043NT5G, and RUM001L02T2CL meet these criteria with variations in current rating, on-resistance characteristics, and power dissipation capabilities. Each substitute maintains N-Channel MOSFET topology with 20V Vdss rating and surface mount SOT-723 package compatibility.

Parameter Comparison

Engineering Selection Recommendations

SSM3K35AMFV,L3F (Toshiba)

This direct Toshiba substitute provides enhanced performance with 250mA continuous drain current, exceeding the 180mA specification of the primary part. The device features improved on-resistance of 1.1Ohm at 150mA and 4.5V gate voltage, with significantly higher power dissipation capability at 500mW. The part maintains identical 20V Vdss rating and SOT-723 package compatibility. ROHS3 compliance and unlimited MSL rating ensure regulatory alignment. Higher input capacitance (36pF @ 10V) should be evaluated for switching speed requirements in the target application.

NTK3043NT5G (onsemi)

This onsemi alternative delivers 210mA continuous drain current within acceptable range of the primary specification. The device operates across an extended temperature range (-55°C to 150°C junction temperature), providing broader thermal performance envelope. On-resistance of 3.4Ohm at 10mA and 4.5V gate voltage and power dissipation of 310mW support the application requirements. SOT-723 package and ROHS3 compliance maintain manufacturing compatibility. Gate threshold voltage of 1.3V @ 250µA represents a minor elevation from the primary part specification.

RUM001L02T2CL (Rohm Semiconductor)

This Rohm substitute operates at 100mA continuous drain current, below the primary part specification of 180mA. The device is suitable for applications with reduced current requirements or as a conservative design choice. On-resistance of 3.5Ohm @ 100mA and 4.5V gate voltage and power dissipation of 150mW match the primary part thermal envelope. Input capacitance of 7.1pF @ 10V provides the lowest capacitive loading among substitute options. Gate voltage maximum rating of ±8V is reduced compared to the primary part ±10V specification. ROHS3 compliance and unlimited MSL rating confirm regulatory status.

Frequently Asked Questions (FAQ)

Q: Can SSM3K35AMFV,L3F be used as a direct replacement for SSM3K35MFV(TPL3)?

A: Yes. Both parts are manufactured by Toshiba, share identical 20V Vdss rating, SOT-723 package, and N-Channel MOSFET topology. The substitute provides higher continuous drain current (250mA vs. 180mA) and improved on-resistance characteristics. Regulatory compliance (ROHS3) and moisture sensitivity (MSL 1) are equivalent. Circuit performance will be maintained or improved due to enhanced electrical specifications.

Q: What is the primary limitation of RUM001L02T2CL as a substitute?

A: The RUM001L02T2CL operates at 100mA continuous drain current, which is below the primary part specification of 180mA. This device is suitable only for applications with current requirements not exceeding 100mA. Additionally, the maximum gate voltage rating is ±8V compared to ±10V for the primary part, which may restrict operation in circuits requiring higher gate drive voltages.

Q: Are all substitute parts compatible with the SOT-723 footprint?

A: Yes. All substitute parts utilize SOT-723 package designation or equivalent surface mount packages (VESM, VMT3) with identical pin configuration and footprint compatibility. PCB layout modifications are not required for substitution.

Q: How does input capacitance variation affect circuit performance?

A: Input capacitance (Ciss) ranges from 7.1pF to 36pF across the substitute options. Higher capacitance increases gate charge requirements and may slow switching transitions in high-frequency applications. The primary part specifies 9.5pF @ 3V. SSM3K35AMFV,L3F exhibits the highest capacitance at 36pF @ 10V, while RUM001L02T2CL provides the lowest at 7.1pF @ 10V. Application-specific switching frequency and gate driver capability should be evaluated when selecting among substitutes.

Q: Do all parts meet current RoHS compliance requirements?

A: Yes. The primary part carries RoHS Compliant status, while all three substitute parts carry ROHS3 Compliant status. Both designations confirm compliance with current lead-free and hazardous substance restrictions. ROHS3 represents the current regulatory standard and provides enhanced compliance assurance.

Q: What is the significance of the extended temperature range in NTK3043NT5G?

A: The NTK3043NT5G operates across -55°C to 150°C junction temperature, compared to 150°C maximum for other parts. This extended lower temperature limit provides operational capability in colder environments. The primary part and other substitutes specify only the maximum operating temperature without a defined minimum, typically implying standard industrial range. Selection of NTK3043NT5G is appropriate for applications requiring confirmed low-temperature performance.

Q: Can gate voltage differences between substitutes affect circuit compatibility?

A: Yes. The primary part and most substitutes specify ±10V maximum gate voltage, while RUM001L02T2CL limits gate voltage to ±8V. Circuits applying gate voltages between ±8V and ±10V are incompatible with RUM001L02T2CL. All other substitutes maintain ±10V compatibility with the primary part specification. Gate voltage requirements should be confirmed before selecting RUM001L02T2CL.

Q: How do on-resistance specifications compare across all parts?

A: On-resistance values are measured at different drain current and gate voltage conditions, making direct comparison complex. SSM3K35AMFV,L3F provides the lowest on-resistance at 1.1Ohm @ 150mA, 4.5V, indicating superior conductivity. The primary part specifies 3Ohm @ 50mA, 4V. NTK3043NT5G and RUM001L02T2CL specify 3.4Ohm and 3.5Ohm respectively at different measurement conditions. Lower on-resistance reduces power dissipation in high-current applications. Measurement conditions must be aligned with actual circuit operating points for accurate performance prediction.