SSM3K339R,LF N-Channel MOSFET 40V 2A Equivalent & Substitute Parts

Part Overview

The SSM3K339R,LF is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 40V drain-to-source voltage with 2A continuous drain current at 25°C. This device is housed in a SOT-23F surface mount package and is designed for general-purpose switching applications requiring compact form factors and low on-resistance characteristics. The part is currently in active production status with 9,300 units in stock inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal, voltage, and current requirements. The PMV130ENEAR from Nexperia USA Inc. provides functional equivalence with enhanced specifications in certain parameters.

Key Parameters

Parameter	SSM3K339R,LF	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	2	A
On-Resistance (Rds On Max) @ 1A, 8V	185	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	1.2	V
Gate Charge (Qg Max) @ 4.2V	1.1	nC
Input Capacitance (Ciss Max) @ 10V	130	pF
Maximum Gate Voltage (Vgs Max)	±12	V
Power Dissipation (Max)	1	W
Operating Temperature (TJ)	150	°C
Package Type	SOT-23-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution eligibility for the SSM3K339R,LF is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Drain-to-Source Voltage (Vdss) rating equal to or greater than 40V to ensure safe operation across the full application voltage range.

Current Capability: The continuous drain current (Id) rating must meet or exceed 2A at 25°C to support the application's current demands without thermal derating.

On-Resistance Performance: The Rds On specification directly impacts power dissipation and thermal behavior. Substitute parts with lower Rds On values provide improved efficiency and reduced heat generation.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with comparable or lower values maintain circuit timing characteristics.

Package Compatibility: Surface mount packages SOT-23-3, TO-236-3, and SC-59 are mechanically and electrically compatible for PCB layout purposes.

Thermal and Compliance Status: Active product status, RoHS3 compliance, and REACH unaffected status ensure regulatory alignment and supply chain continuity.

The PMV130ENEAR meets all substitution criteria with enhanced current capability (2.1A), improved on-resistance (120mOhm @ 1.5A, 10V), and automotive-grade qualification (AEC-Q100).

Parameter Comparison

Parameter	SSM3K339R,LF (Toshiba)	PMV130ENEAR (Nexperia)	Unit
Manufacturer	Toshiba Semiconductor and Storage	Nexperia USA Inc.	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain-to-Source Voltage (Vdss)	40	40	V
Continuous Drain Current (Id) @ 25°C	2	2.1	A
On-Resistance (Rds On Max)	185 @ 1A, 8V	120 @ 1.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	1.2 @ 1mA	2.5 @ 250µA	V
Gate Charge (Qg Max)	1.1 @ 4.2V	3.6 @ 10V	nC
Input Capacitance (Ciss Max)	130 @ 10V	170 @ 20V	pF
Maximum Gate Voltage (Vgs Max)	±12	±20	V
Power Dissipation (Max)	1 (Ta)	460mW (Ta), 5W (Tc)	W
Operating Temperature Range (TJ)	-	-55 to 150	°C
Package Type	SOT-23-3	TO-236-3 / SC-59 / SOT-23-3	-
Mounting Type	Surface Mount	Surface Mount	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	-
Product Status	Active	Active	-

Engineering Selection Recommendations

Primary Selection (SSM3K339R,LF): Select the Toshiba SSM3K339R,LF for applications requiring the specified 40V/2A performance envelope with standard industrial compliance. This part is actively manufactured with substantial inventory availability (9,300 units) and meets RoHS3 and REACH regulatory requirements.

Substitute Selection (PMV130ENEAR): The Nexperia PMV130ENEAR is suitable as a direct substitute when enhanced performance margins are beneficial. This part provides higher continuous drain current (2.1A versus 2A), superior on-resistance characteristics (120mOhm versus 185mOhm), and automotive-grade qualification (AEC-Q100). The PMV130ENEAR is compatible with SOT-23-3 package footprints and maintains full regulatory compliance. The higher gate charge (3.6nC versus 1.1nC) and input capacitance (170pF versus 130pF) require verification of gate drive circuit capability in timing-critical applications.

Compliance Alignment: Both parts maintain active production status, RoHS3 compliance, and REACH unaffected designation, ensuring regulatory continuity and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the PMV130ENEAR replace the SSM3K339R,LF in existing designs without PCB modifications?

A: Yes, the PMV130ENEAR is compatible with SOT-23-3 package footprints. Both parts use identical pin configurations and surface mount placement. No PCB layout changes are required for mechanical compatibility.

Q: What is the primary difference in on-resistance between these two parts?

A: The PMV130ENEAR exhibits lower on-resistance (120mOhm @ 1.5A, 10V) compared to the SSM3K339R,LF (185mOhm @ 1A, 8V). This results in reduced power dissipation and improved thermal performance in switching applications. The measurement conditions differ between parts, reflecting different characterization methodologies by each manufacturer.

Q: Are there gate drive circuit considerations when substituting to the PMV130ENEAR?

A: The PMV130ENEAR has higher gate charge (3.6nC @ 10V) and input capacitance (170pF @ 20V) compared to the SSM3K339R,LF (1.1nC @ 4.2V and 130pF @ 10V). Verify that the existing gate drive circuit can supply sufficient current to meet switching frequency requirements. The PMV130ENEAR also accepts higher maximum gate voltage (±20V versus ±12V), providing additional design margin.

Q: What is the significance of the AEC-Q100 qualification on the PMV130ENEAR?

A: AEC-Q100 qualification indicates the PMV130ENEAR meets automotive-grade reliability and quality standards. This certification is not required for industrial applications but provides additional assurance of manufacturing consistency and long-term reliability. The SSM3K339R,LF does not carry automotive qualification but meets standard industrial compliance requirements.

Q: How do the power dissipation ratings compare?

A: The SSM3K339R,LF is rated for 1W (Ta). The PMV130ENEAR provides 460mW (Ta) and 5W (Tc), indicating improved thermal performance when mounted on a PCB with adequate copper area. The higher Tc rating reflects better heat dissipation characteristics in practical applications.

Q: Are both parts suitable for continuous operation at 150°C junction temperature?

A: The SSM3K339R,LF is rated to 150°C (TJ). The PMV130ENEAR operates across -55°C to 150°C (TJ), providing extended low-temperature capability. Both parts support the specified maximum junction temperature for the application.

Q: What inventory considerations should guide part selection?

A: The SSM3K339R,LF has 9,300 units in stock, providing immediate availability. The PMV130ENEAR has 1,120 units available. For high-volume production, the Toshiba part offers superior supply assurance. For applications requiring enhanced performance specifications, the Nexperia part is available with adequate stock for standard production runs.

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