SSM3K329R,LF N-Channel MOSFET 30V 3.5A Equivalent & Substitute Parts

Part Overview

The SSM3K329R,LF is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, designed for surface mount applications in the SOT-23F package. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 3.5A at 25°C and maximum power dissipation of 1W. The part is classified as "Not For New Designs," indicating it has been superseded or is in end-of-life status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support existing production requirements for legacy systems or applications where this specific device is currently deployed.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	3.5	A
On-State Resistance (Rds On Max) @ Id, Vgs	126 mOhm @ 1A, 4V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1	V @ 1mA
Gate Charge (Qg Max) @ Vgs	1.5	nC @ 4V
Input Capacitance (Ciss Max) @ Vds	123	pF @ 15V
Power Dissipation (Max)	1	W
Operating Temperature (TJ Max)	150	°C
Package Type	SOT-23-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the SSM3K329R,LF is determined by strict alignment of electrical and mechanical parameters within acceptable tolerances for N-Channel MOSFET applications. The primary substitution criteria are:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must meet or exceed 3.5A at 25°C
On-State Resistance (Rds On) characteristics must support the application's power dissipation budget
Gate Threshold Voltage (Vgs(th)) must be compatible with the drive circuit
Maximum Gate Voltage (Vgs Max) must accommodate the control signal range

Mechanical Compatibility Requirements:

Surface mount package with three leads (SOT-23 family variants acceptable)
Moisture Sensitivity Level (MSL) of 1 or equivalent
RoHS3 compliance and REACH unaffected status maintained

Identified Substitute: The PMV90ENER from Nexperia USA Inc. meets the core electrical requirements with Vdss of 30V and continuous drain current of 3A, which approaches the 3.5A specification. The device is packaged in TO-236AB (SOT-23-3 variant), maintaining mechanical compatibility. Both devices share N-Channel MOSFET technology, RoHS3 compliance, and MSL 1 rating.

Parameter Comparison

Parameter	SSM3K329R,LF (Toshiba)	PMV90ENER (Nexperia)	Unit
Manufacturer	Toshiba Semiconductor and Storage	Nexperia USA Inc.	—
Drain to Source Voltage (Vdss)	30	30	V
Continuous Drain Current (Id) @ 25°C	3.5	3.0	A
On-State Resistance (Rds On Max)	126 mOhm @ 1A, 4V	72 mOhm @ 3A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1 V @ 1mA	2.5 V @ 250µA	V
Gate Charge (Qg Max) @ Vgs	1.5 nC @ 4V	5.5 nC @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	123 pF @ 15V	160 pF @ 15V	pF
Power Dissipation (Max)	1.0	0.46	W
Operating Temperature (TJ Max)	150	150	°C
Package Type	SOT-23F	TO-236AB	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Not For New Designs	Not For New Designs	—

Engineering Selection Recommendations

Both the SSM3K329R,LF and PMV90ENER are classified as "Not For New Designs," indicating mature or end-of-life product status. Selection between these devices should be based on the following engineering considerations:

Electrical Performance Trade-offs: The SSM3K329R,LF provides higher continuous drain current (3.5A versus 3.0A) and lower gate charge (1.5 nC versus 5.5 nC), resulting in faster switching characteristics and reduced gate drive power requirements. The PMV90ENER offers superior on-state resistance (72 mOhm versus 126 mOhm at comparable conditions), reducing conduction losses in high-current applications.

Thermal Management: The SSM3K329R,LF has a higher power dissipation rating (1.0W versus 0.46W), providing greater thermal headroom in applications with sustained current flow. The PMV90ENER's lower on-state resistance may offset its lower power rating in applications operating near the 3A current level.

Package and Supply Chain Considerations: Both devices use SOT-23 family packages (SOT-23F and TO-236AB respectively) with identical pinout compatibility. Packaging format differences (Cut Tape versus Tape & Reel) reflect current inventory and supply chain availability rather than functional differences. Both devices maintain RoHS3 compliance and REACH unaffected status, satisfying regulatory requirements for current production environments.

Application-Specific Selection: For applications requiring maximum current handling and fast switching response, the SSM3K329R,LF is the primary choice. For applications prioritizing low conduction losses and thermal efficiency at currents up to 3.0A, the PMV90ENER is suitable. Both devices operate across the full temperature range to 150°C and accept gate voltages up to ±12V (SSM3K329R,LF) or ±20V (PMV90ENER).

Frequently Asked Questions (FAQ)

Q: Can the PMV90ENER directly replace the SSM3K329R,LF in existing designs?

A: Direct replacement is possible in applications where continuous drain current does not exceed 3.0A. The PMV90ENER meets the 30V voltage specification and maintains SOT-23 package compatibility. However, applications requiring the full 3.5A rating of the SSM3K329R,LF must be re-evaluated for thermal and electrical performance with the substitute device.

Q: What are the key differences in gate drive requirements between these devices?

A: The SSM3K329R,LF has lower gate charge (1.5 nC at 4V) compared to the PMV90ENER (5.5 nC at 10V), requiring less energy to switch the device. The PMV90ENER has a higher gate threshold voltage (2.5V at 250µA versus 1V at 1mA), which may require adjustment of gate drive circuits designed for the original device.

Q: Are both devices suitable for new production designs?

A: No. Both the SSM3K329R,LF and PMV90ENER are classified as "Not For New Designs." These devices are appropriate for sustaining production of existing products, legacy system support, and repair applications only. New designs should evaluate current-generation alternatives from the manufacturers' active product portfolios.

Q: How do the on-state resistance specifications compare?

A: The SSM3K329R,LF specifies 126 mOhm at 1A and 4V gate voltage, while the PMV90ENER specifies 72 mOhm at 3A and 10V gate voltage. These measurements are taken at different operating points, making direct comparison difficult. The PMV90ENER's lower resistance value at higher current and gate voltage suggests superior performance in high-current, fully-enhanced conditions.

Q: What packaging formats are available for each device?

A: The SSM3K329R,LF is supplied in Cut Tape (CT) and Digi-Reel® formats. The PMV90ENER is supplied in Tape & Reel (TR) format. Both use SOT-23 family packages with three leads and identical pinout. Packaging format selection depends on assembly equipment compatibility and inventory management requirements.

Q: Do both devices meet current regulatory compliance standards?

A: Yes. Both the SSM3K329R,LF and PMV90ENER are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Both devices satisfy regulatory requirements for production environments requiring RoHS and REACH compliance.

Q: What is the maximum gate voltage for each device?

A: The SSM3K329R,LF accepts gate voltages up to ±12V. The PMV90ENER accepts gate voltages up to ±20V. Applications using gate drive circuits that exceed ±12V must use the PMV90ENER or verify gate voltage compatibility with the SSM3K329R,LF specifications.

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