SSM3J66MFV,L3F P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The SSM3J66MFV,L3F is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, designed for surface mount applications in the U-MOSVI series. This device operates at 20V drain-to-source voltage with 800mA continuous drain current and 150mW power dissipation, housed in a SOT-723 package. The part is currently Active in product status with 7138 units in stock. Substitute parts are identified to provide alternative sourcing options when the primary part number becomes unavailable or when inventory requirements necessitate alternative stock sources.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	800	mA
Rds On (Max) @ 800mA, 4.5V	390	mOhm
Power Dissipation (Max)	150	mW
Operating Temperature (Max)	150	°C
Package / Case	SOT-723	—
Mounting Type	Surface Mount	—
Vgs (Max)	+6V, -8V	V
Gate Charge (Qg) (Max) @ 4.5V	1.6	nC
Input Capacitance (Ciss) (Max) @ 10V	100	pF

Substitute Part Grouping Explanation

Substitution of the SSM3J66MFV,L3F is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Parameters (Must Match):

FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 800mA @ 25°C
On-State Resistance (Rds On): 390mOhm @ 800mA, 4.5V
Power Dissipation: 150mW
Gate Charge (Qg): 1.6nC @ 4.5V
Input Capacitance (Ciss): 100pF @ 10V
Gate Voltage Range (Vgs): +6V, -8V

Mechanical Parameters (Must Match):

Package / Case: SOT-723
Mounting Type: Surface Mount
Supplier Device Package: VESM

The substitute part SSM3J66MFV,L3XHF meets all electrical and mechanical specifications, maintaining identical performance characteristics and package compatibility.

Parameter Comparison

Parameter	SSM3J66MFV,L3F	SSM3J66MFV,L3XHF	Match
Manufacturer	Toshiba Semiconductor and Storage	Toshiba Semiconductor and Storage	Yes
FET Type	P-Channel	P-Channel	Yes
Drain to Source Voltage (Vdss)	20V	20V	Yes
Continuous Drain Current (Id) @ 25°C	800mA	800mA	Yes
Rds On (Max) @ 800mA, 4.5V	390mOhm	390mOhm	Yes
Power Dissipation (Max)	150mW	150mW	Yes
Operating Temperature (Max)	150°C	150°C	Yes
Package / Case	SOT-723	SOT-723	Yes
Mounting Type	Surface Mount	Surface Mount	Yes
Supplier Device Package	VESM	VESM	Yes
Gate Charge (Qg) (Max) @ 4.5V	1.6nC	1.6nC	Yes
Input Capacitance (Ciss) (Max) @ 10V	100pF	100pF	Yes
Vgs (Max)	+6V, -8V	+6V, -8V	Yes
Series	U-MOSVI	U-MOSVI	Yes
Product Status	Active	Active	Yes
RoHS / REACH Compliance	ROHS3 Compliant	REACH Unaffected	Compliant

Engineering Selection Recommendations

Both the SSM3J66MFV,L3F and SSM3J66MFV,L3XHF are Active products from Toshiba Semiconductor and Storage, ensuring continued availability and technical support. The substitute part SSM3J66MFV,L3XHF provides identical electrical performance and mechanical compatibility across all specified parameters.

Selection between these parts is based on regulatory compliance requirements and supply chain considerations:

SSM3J66MFV,L3F: ROHS3 Compliant. Use when ROHS3 certification is a design requirement.

SSM3J66MFV,L3XHF: REACH Unaffected status. Use when REACH compliance documentation is required or when supply from this variant is preferred.

Both parts are classified under ECCN EAR99 and HTSUS 8541.21.0095, with Moisture Sensitivity Level 1 (Unlimited). Direct substitution is permissible without circuit redesign or layout modification, as all electrical and mechanical parameters are identical.

Frequently Asked Questions (FAQ)

Q: Can SSM3J66MFV,L3XHF be used as a direct replacement for SSM3J66MFV,L3F?

A: Yes. Both parts are electrically and mechanically identical across all specified parameters, including Vdss (20V), Id (800mA), Rds On (390mOhm), power dissipation (150mW), and package (SOT-723). Direct substitution requires no circuit modifications.

Q: What is the difference between these two part numbers?

A: The primary difference is regulatory compliance designation. SSM3J66MFV,L3F carries ROHS3 Compliant status, while SSM3J66MFV,L3XHF is REACH Unaffected. Both are Active products from Toshiba with identical electrical specifications.

Q: Are there any package or pinout differences?

A: No. Both parts use the SOT-723 package with VESM supplier device package designation. Pinout, lead spacing, and mounting footprint are identical.

Q: What is the Moisture Sensitivity Level for both parts?

A: Both parts have Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

Q: Can these parts be used interchangeably in production?

A: Yes. Both parts meet identical electrical and mechanical specifications. Production designs can source from either part number without design changes, provided regulatory compliance requirements are met for the target application.

Q: What is the gate charge specification?

A: Gate charge (Qg) is 1.6nC maximum at 4.5V for both parts. Input capacitance (Ciss) is 100pF maximum at 10V.

Q: Are both parts available in Tape & Reel packaging?

A: Yes. Both SSM3J66MFV,L3F and SSM3J66MFV,L3XHF are supplied in Tape & Reel (TR) packaging for automated assembly.

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