SSM3J46CTB(TPL3) Equivalent & Substitute Parts

Part Overview

The SSM3J46CTB(TPL3) is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 20V drain-to-source voltage with 2A continuous drain current at 25°C. This device is part of the U-MOSVI series and features a CST3B surface mount package with 3 SMD, no lead configuration.

The SSM3J46CTB(TPL3) is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

SSM3J46CTB(TPL3)
Toshiba Semiconductor and StorageIn Stock: 25480SSM3J46CTB(TPL3) Datasheet
SSM3J46CTB(TPL3)
Current Part
SSM3J377R,LF
Toshiba Semiconductor and StorageIn Stock: 6576SSM3J377R,LF Datasheet
SSM3J377R,LF
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2 A
Rds On (Max) @ 1.5A, 4.5V 103 mOhm
Vgs(th) (Max) @ 1mA 1 V
Gate Charge (Qg) (Max) @ 4.5V 4.7 nC
Input Capacitance (Ciss) (Max) @ 10V 290 pF
Vgs (Max) ±8 V
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead (CST3B)
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the SSM3J46CTB(TPL3) is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Minimum 20V rating required
  • Gate Threshold Voltage (Vgs(th)): Maximum 1V @ 1mA to ensure compatible gate drive characteristics
  • Gate Charge (Qg): Maximum 4.7 nC @ 4.5V to preserve switching performance
  • Input Capacitance (Ciss): Maximum 290 pF @ 10V to maintain circuit timing
  • Vgs (Max): Must accommodate ±8V gate voltage specification

Current Rating Consideration:

  • Continuous Drain Current (Id) @ 25°C: Substitute parts rated at 2A or higher satisfy this requirement

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount required
  • Package Configuration: CST3B or equivalent 3-lead surface mount packages acceptable

Compliance Requirements:

  • RoHS Status: RoHS Compliant or ROHS3 Compliant
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

The SSM3J377R,LF meets all substitution criteria and is classified as an active product, providing improved current rating (3.9A) and lower on-resistance (93 mOhm) while maintaining electrical parameter compatibility.

Parameter Comparison

Parameter SSM3J46CTB(TPL3) SSM3J377R,LF Unit
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series U-MOSVI U-MOSVI
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 20 V
Current - Continuous Drain (Id) @ 25°C 2 3.9 A
Rds On (Max) @ 1.5A, 4.5V 103 93 mOhm
Vgs(th) (Max) @ 1mA 1 1 V
Gate Charge (Qg) (Max) @ 4.5V 4.7 4.6 nC
Input Capacitance (Ciss) (Max) @ 10V 290 290 pF
Vgs (Max) ±8 +6, -8 V
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case 3-SMD, No Lead (CST3B) SOT-23-3 Flat Leads (SOT-23F)
RoHS Status RoHS Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

SSM3J377R,LF as Primary Substitute:

The SSM3J377R,LF is the qualified substitute for the obsolete SSM3J46CTB(TPL3). This substitution is supported by the following factors:

Product Status Advantage: The SSM3J377R,LF is classified as an active product with current manufacturing support, ensuring long-term availability and supply chain continuity compared to the obsolete status of the original part.

Electrical Parameter Compatibility: All critical electrical parameters align within acceptable substitution boundaries. The substitute maintains identical Vdss (20V), Vgs(th) (1V @ 1mA), and Input Capacitance (290 pF @ 10V) specifications. Gate Charge remains virtually identical (4.6 nC versus 4.7 nC), preserving switching characteristics.

Performance Enhancement: The SSM3J377R,LF provides improved electrical performance with higher continuous drain current (3.9A versus 2A) and lower on-resistance (93 mOhm versus 103 mOhm), delivering superior thermal and efficiency characteristics in the same voltage class.

Compliance Certification: Both parts maintain RoHS compliance and MSL 1 (Unlimited) moisture sensitivity rating. The substitute carries ROHS3 Compliant certification, meeting current regulatory requirements.

Package Consideration: The substitute utilizes SOT-23F packaging (SOT-23-3 Flat Leads) instead of CST3B (3-SMD, No Lead). PCB layout and footprint modifications are required for implementation. Both packages are industry-standard surface mount configurations with equivalent lead count and thermal performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the SSM3J377R,LF directly replace the SSM3J46CTB(TPL3) without circuit modifications?

A: Electrical substitution is valid based on parameter compatibility. However, package differences (CST3B versus SOT-23F) require PCB footprint redesign. Verify PCB layout compatibility and thermal management provisions before implementation.

Q: What is the significance of the higher current rating (3.9A) in the SSM3J377R,LF?

A: The substitute part supports higher continuous drain current, providing design margin and improved thermal performance. Applications designed for 2A operation remain fully compatible, as the substitute operates within the original current specification with enhanced capability.

Q: Are there differences in gate voltage specifications between these parts?

A: The SSM3J46CTB(TPL3) specifies Vgs (Max) as ±8V, while the SSM3J377R,LF specifies +6V, -8V. The asymmetric positive gate voltage limit in the substitute is 2V lower. Verify gate drive circuit compliance with the +6V maximum positive gate voltage specification.

Q: How do the on-resistance values compare?

A: The SSM3J377R,LF exhibits lower on-resistance (93 mOhm @ 1.5A, 4.5V) compared to the original part (103 mOhm @ 1.5A, 4.5V). This 10 mOhm reduction improves power dissipation characteristics and thermal performance in switching applications.

Q: What packaging considerations apply to this substitution?

A: The original CST3B package (3-SMD, No Lead) differs from the substitute SOT-23F package (SOT-23-3 Flat Leads). Both are surface mount configurations with three leads. PCB footprint, solder pad geometry, and component placement require redesign to accommodate the different package outline.

Q: Is the SSM3J377R,LF suitable for new designs?

A: Yes. The SSM3J377R,LF is classified as an active product with current manufacturing support. It is suitable for both replacement of obsolete designs and new product development requiring P-Channel 20V MOSFETs in the 2A to 3.9A current range.

Q: How do gate charge specifications affect circuit performance?

A: Gate Charge (Qg) values are nearly identical (4.7 nC versus 4.6 nC @ 4.5V), indicating equivalent switching speed and gate drive requirements. Gate driver circuits designed for the original part operate within specification for the substitute.

Q: What compliance certifications apply to both parts?

A: Both parts maintain RoHS compliance and MSL 1 (Unlimited) moisture sensitivity rating. The substitute carries ROHS3 Compliant certification, meeting current environmental and regulatory standards. Both parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

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