SSM3J16CT(TPL3) Equivalent & Substitute Parts

Part Overview

The SSM3J16CT(TPL3) is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, designed for surface mount applications in the π-MOSVI series. This device operates at 20V drain-to-source voltage with a continuous drain current rating of 100mA and 100mW power dissipation. The component is classified as Active product status with full RoHS compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support applications requiring alternative electrical or thermal performance characteristics within compatible parameter ranges.

Substiute Parts

SSM3J16CT(TPL3)

Toshiba Semiconductor and StorageIn Stock: 678SSM3J16CT(TPL3) Datasheet

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PMZ950UPEYL

NXP SemiconductorsIn Stock: 350495PMZ950UPEYL Datasheet

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RSC002P03T316

Rohm SemiconductorIn Stock: 19182RSC002P03T316 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the SSM3J16CT(TPL3) are qualified based on the following substitution criteria:

Primary Compatibility Parameters:

• FET Type: P-Channel topology
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): Equal to or greater than 20V
• Mounting Type: Surface Mount
• Package compatibility: SOT-883 or equivalent footprint

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Equal to or greater than 100mA
• Operating Temperature: Maximum junction temperature of 150°C or higher
• Regulatory Compliance: RoHS compliance and MSL rating of 1

The identified substitute parts meet or exceed the electrical and thermal specifications of the main part while maintaining surface mount compatibility and regulatory compliance. Substitutes are grouped by their ability to function within the same application envelope without circuit redesign.

Parameter Comparison

Engineering Selection Recommendations

PMZ950UPEYL (NXP Semiconductors)

The PMZ950UPEYL qualifies as a direct substitute for the SSM3J16CT(TPL3) in applications requiring equivalent or enhanced performance. This device maintains the 20V Vdss rating and SOT-883 package footprint. The PMZ950UPEYL provides superior continuous drain current capability (500mA versus 100mA) and significantly improved power dissipation performance (360mW at Ta, 2.7W at Tc versus 100mW). The lower on-resistance (1.4 Ohm at 500mA, 4.5V) and lower gate threshold voltage (950mV) enable more efficient switching characteristics. Extended operating temperature range (−55°C to 150°C) provides additional thermal margin. Product status is Active with REACH compliance and MSL 1 rating. This substitute is suitable for applications where enhanced current handling and thermal performance are beneficial.

RSC002P03T316 (Rohm Semiconductor)

The RSC002P03T316 qualifies as a substitute for the SSM3J16CT(TPL3) with elevated voltage rating and current capability. This device provides 30V Vdss (versus 20V), supporting applications with higher voltage headroom. Continuous drain current rating of 250mA exceeds the main part specification. Power dissipation is rated at 200mW (Ta), providing improved thermal performance. On-resistance of 1.4 Ohm at 250mA, 10V demonstrates efficient switching. Package options include TO-236-3, SC-59, and SOT-23-3, requiring verification of PCB footprint compatibility. Product status is Active with ROHS3 compliance and REACH compliance. This substitute is applicable in designs requiring higher voltage tolerance and increased current capacity.

Frequently Asked Questions (FAQ)

Q: Can the PMZ950UPEYL directly replace the SSM3J16CT(TPL3) without circuit modification?

A: The PMZ950UPEYL maintains identical Vdss (20V) and package footprint (SOT-883), enabling direct PCB-level substitution. Enhanced electrical specifications (higher Id, lower Rds On) are backward compatible with circuits designed for the SSM3J16CT(TPL3). No circuit redesign is required.

Q: What are the key differences between the PMZ950UPEYL and RSC002P03T316?

A: The PMZ950UPEYL maintains 20V Vdss matching the original part, while the RSC002P03T316 provides 30V Vdss. The PMZ950UPEYL offers higher continuous drain current (500mA) and superior power dissipation capability (2.7W at Tc). The RSC002P03T316 provides moderate current capability (250mA) with 30V voltage rating. Package compatibility differs: PMZ950UPEYL uses SOT-883; RSC002P03T316 uses TO-236-3, SC-59, or SOT-23-3.

Q: Is the RSC002P03T316 suitable for applications designed for 20V operation?

A: The RSC002P03T316 with 30V Vdss rating is suitable for 20V applications. The elevated voltage rating provides additional design margin and does not create incompatibility. PCB footprint compatibility must be verified, as package options differ from the original SOT-883.

Q: What is the significance of the lower gate threshold voltage in the PMZ950UPEYL?

A: The PMZ950UPEYL gate threshold voltage of 950mV (versus 1.1V in the SSM3J16CT(TPL3)) indicates faster switching response at lower gate drive voltages. This characteristic improves switching efficiency and reduces gate drive power requirements in applications with limited drive capability.

Q: Are all substitute parts RoHS compliant?

A: The SSM3J16CT(TPL3) is RoHS Compliant. The PMZ950UPEYL is REACH Unaffected. The RSC002P03T316 is ROHS3 Compliant. All parts maintain MSL 1 (Unlimited) rating. Regulatory compliance verification with specific application requirements is recommended.

Q: Can the RSC002P03T316 be used in space-constrained applications?

A: The RSC002P03T316 offers multiple package options (TO-236-3, SC-59, SOT-23-3). Package selection depends on available PCB footprint. The SOT-23-3 option provides compact form factor comparable to SOT-883. Physical dimensions and land pattern compatibility must be verified against PCB design specifications.

Q: What is the impact of higher power dissipation ratings in substitute parts?

A: The PMZ950UPEYL (360mW at Ta, 2.7W at Tc) and RSC002P03T316 (200mW at Ta) provide enhanced thermal performance compared to the SSM3J16CT(TPL3) (100mW at Ta). Higher power dissipation ratings indicate improved thermal management capability, reducing junction temperature rise in high-current or high-frequency switching applications. This characteristic is beneficial but not required for direct substitution.