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SSD2025TF MOSFET Equivalent & Substitute Parts
Part Overview
The SSD2025TF is a dual N-channel MOSFET array manufactured by onsemi, rated for 60V drain-to-source voltage with 3.3A continuous drain current. The device features logic level gate operation and is packaged in an 8-SOIC surface mount configuration. The SSD2025TF is classified as obsolete, necessitating identification of active substitute components that maintain electrical and mechanical compatibility for new designs and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Current - Continuous Drain (Id) @ 25°C | 3.3 | A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.3A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 1 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 | nC @ 10V |
| Power - Max | 2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Configuration | 2 N-Channel (Dual) | — |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | — |
| Mounting Type | Surface Mount | — |
| FET Feature | Logic Level Gate | — |
Substitute Part Grouping Explanation
Substitute parts for the SSD2025TF are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:
Critical Parameters (Must Match or Exceed):
- Drain to Source Voltage (Vdss): 60V minimum
- Configuration: 2 N-Channel (Dual)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Mounting Type: Surface Mount
- FET Feature: Logic Level Gate
- Operating Temperature Range: Must encompass -55°C to 150°C minimum
Performance Parameters (Must Meet or Exceed):
- Current - Continuous Drain (Id) @ 25°C: 3.3A minimum
- Rds On (Max): 100 mOhm or lower at rated conditions
- Power - Max: 2W or higher
Substitute parts identified below satisfy all critical parameters and maintain or improve performance specifications, ensuring direct functional replacement in circuit applications.
Parameter Comparison
| Parameter | SSD2025TF (Main) | FDS9945 (Substitute) | STS4DNF60L (Substitute) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | STMicroelectronics |
| Product Status | Obsolete | Active | Active |
| Drain to Source Voltage (Vdss) | 60V | 60V | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A | 3.5A | 4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.3A, 10V | 100 mOhm @ 3.5A, 10V | 55 mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10V | 13 nC @ 5V | 15 nC @ 4.5V |
| Power - Max | 2W | 1W | 2W |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 175°C (TJ) | -55°C to 150°C (TJ) |
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 | EAR99 |
Engineering Selection Recommendations
FDS9945 (onsemi)
The FDS9945 is an active product from onsemi with identical voltage and package specifications to the SSD2025TF. It provides 3.5A continuous drain current, exceeding the 3.3A requirement. The FDS9945 maintains 100 mOhm on-resistance at rated conditions and extends the operating temperature range to 175°C. This substitute is RoHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability. The lower gate charge (13 nC @ 5V) and reduced input capacitance (420 pF @ 30V) provide improved switching performance characteristics.
STS4DNF60L (STMicroelectronics)
The STS4DNF60L is an active product from STMicroelectronics offering superior current handling at 4A continuous drain current. It features significantly lower on-resistance (55 mOhm @ 2A, 10V) compared to the SSD2025TF, resulting in reduced power dissipation. The STS4DNF60L maintains identical voltage rating, package configuration, and operating temperature range (-55°C to 150°C). This substitute is RoHS3 compliant with active product status. The improved on-resistance and gate charge characteristics (15 nC @ 4.5V) support enhanced thermal and switching performance in power-sensitive applications.
Both substitutes maintain mechanical and electrical compatibility with the SSD2025TF while offering active product status and improved performance metrics.
Frequently Asked Questions (FAQ)
Q: Can the FDS9945 or STS4DNF60L be used as direct replacements for the SSD2025TF in existing designs?
A: Both substitutes share identical package geometry (8-SOIC), voltage rating (60V), configuration (dual N-channel), and mounting type (surface mount). Electrical parameters meet or exceed SSD2025TF specifications. Direct PCB-level substitution is supported without layout modifications.
Q: What are the key differences between the FDS9945 and STS4DNF60L?
A: The FDS9945 maintains the same on-resistance (100 mOhm) as the SSD2025TF with higher current capability (3.5A). The STS4DNF60L provides superior on-resistance (55 mOhm) and higher current rating (4A), resulting in lower power dissipation. The FDS9945 extends operating temperature to 175°C, while the STS4DNF60L matches the original 150°C maximum. Selection depends on thermal and current requirements of the specific application.
Q: Are there compliance or regulatory differences between these substitutes?
A: All three parts carry identical REACH status (REACH Unaffected) and ECCN classification (EAR99). The FDS9945 and STS4DNF60L are RoHS3 compliant. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating, supporting standard handling and storage procedures.
Q: How do gate charge differences affect circuit performance?
A: The SSD2025TF specifies 30 nC gate charge at 10V. The FDS9945 reduces this to 13 nC at 5V, and the STS4DNF60L to 15 nC at 4.5V. Lower gate charge reduces driver power requirements and enables faster switching transitions. Applications with high-frequency switching or limited gate drive capability benefit from the reduced gate charge of the substitute parts.
Q: What is the significance of the on-resistance (Rds On) specification?
A: On-resistance directly determines power dissipation in the conducting state. The SSD2025TF specifies 100 mOhm at 3.3A and 10V gate voltage. The FDS9945 maintains this specification at higher current (3.5A). The STS4DNF60L provides 55 mOhm at 2A, offering superior efficiency in applications operating at lower current levels. Selection should consider the actual operating current and thermal budget of the application.
Q: Are there any thermal considerations when selecting between these substitutes?
A: The FDS9945 supports operation to 175°C junction temperature, exceeding the SSD2025TF and STS4DNF60L maximum of 150°C. In thermally constrained applications, the FDS9945 provides additional margin. The STS4DNF60L's lower on-resistance reduces self-heating, supporting thermal performance in high-current applications. Thermal analysis should consider both maximum junction temperature rating and power dissipation characteristics.
Q: What packaging and supply chain considerations apply to these substitutes?
A: All three parts are available in 8-SOIC surface mount packages with identical footprints. The FDS9945 and STS4DNF60L are supplied in Cut Tape (CT) and Digi-Reel® packaging formats. Both substitutes carry active product status, ensuring continued availability and supply chain support. The SSD2025TF obsolete status necessitates transition to one of these active alternatives for new production.
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