SSD2007ATF Equivalent & Substitute Parts

Part Overview

The SSD2007ATF is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This component features logic level gate operation with a 50V drain-to-source voltage rating and 2A continuous drain current capability. The SSD2007ATF is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the original electrical specifications and physical package dimensions while offering active product status and current availability.

Substiute Parts

SSD2007ATF

onsemiIn Stock: 15567SSD2007ATF Datasheet

Current PartRFQ

FDS9945

onsemiIn Stock: 16496FDS9945 Datasheet

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IRF7103TRPBF

Infineon TechnologiesIn Stock: 17412IRF7103TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the SSD2007ATF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Compatibility Criteria:

• Configuration: 2 N-Channel (Dual) MOSFET array
• Package / Case: 8-SOIC (0.154", 3.90mm Width) surface mount
• Drain to Source Voltage (Vdss): Equal to or greater than 50V
• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 2A
• Operating Temperature Range: Must encompass -55°C ~ 150°C minimum
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Identified Substitutes:

The FDS9945 (onsemi, PowerTrench® series) meets all mandatory criteria with enhanced electrical performance: 60V Vdss rating, 3.5A continuous drain current, and active product status. The IRF7103TRPBF (Infineon Technologies, HEXFET® series) maintains the original 50V Vdss and 8-SOIC package while providing 3A continuous drain current and active product status. Both substitutes are RoHS3 compliant and carry identical MSL ratings.

Parameter Comparison

Engineering Selection Recommendations

FDS9945 Selection Criteria: The FDS9945 is suitable for applications where the original SSD2007ATF specifications can be met with enhanced performance margins. This substitute provides higher voltage rating (60V vs. 50V), increased current capacity (3.5A vs. 2A), and superior on-resistance characteristics (100mOhm vs. 300mOhm). The FDS9945 carries active product status and RoHS3 compliance, ensuring long-term availability and regulatory alignment. The extended operating temperature range (-55°C ~ 175°C) provides additional thermal margin. This substitute is appropriate for designs where the higher current rating and lower on-resistance do not introduce thermal or electrical conflicts.

IRF7103TRPBF Selection Criteria: The IRF7103TRPBF maintains electrical parity with the original SSD2007ATF on voltage rating (50V) and power dissipation (2W), while providing increased current capacity (3A vs. 2A). This substitute carries active product status and RoHS3 compliance. The IRF7103TRPBF is manufactured by Infineon Technologies under the HEXFET® product line, offering established reliability in industrial applications. This substitute is appropriate for designs requiring minimal electrical parameter deviation from the original specification while benefiting from active product support.

Both substitutes are physically compatible with the original 8-SOIC package footprint and maintain identical MSL ratings for handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDS9945 be used as a direct replacement for the SSD2007ATF?

A: The FDS9945 is electrically compatible with the SSD2007ATF in applications where the original 2A continuous drain current specification is not exceeded. The FDS9945 provides higher voltage and current ratings, which are backward-compatible with designs specified for 50V and 2A operation. Physical package compatibility is confirmed (both 8-SOIC). Verification of thermal performance is necessary if the design operates near maximum power dissipation limits, as the FDS9945 has a lower maximum power rating (1W vs. 2W).

Q: Can the IRF7103TRPBF be used as a direct replacement for the SSD2007ATF?

A: The IRF7103TRPBF is electrically compatible with the SSD2007ATF across all specified operating parameters. Both devices share identical voltage rating (50V), similar current capacity (3A vs. 2A), and equivalent power dissipation (2W). Physical package compatibility is confirmed (both 8-SOIC). The IRF7103TRPBF is manufactured by Infineon Technologies and carries active product status.

Q: What are the key differences between the two substitute options?

A: The FDS9945 offers higher voltage rating (60V vs. 50V) and current capacity (3.5A vs. 3A), with lower on-resistance (100mOhm vs. 130mOhm). The IRF7103TRPBF maintains closer electrical parity to the original SSD2007ATF with identical voltage rating and power dissipation. The FDS9945 has a lower maximum power rating (1W vs. 2W), which may be a limiting factor in high-dissipation applications. Both substitutes are physically compatible with the original package footprint.

Q: Are both substitutes RoHS compliant?

A: Both the FDS9945 and IRF7103TRPBF are RoHS3 compliant. The original SSD2007ATF does not specify RoHS status. Both substitutes carry REACH Unaffected designation, matching the original part.

Q: What is the moisture sensitivity level for these substitutes?

A: Both substitute parts carry MSL 1 (Unlimited) rating, identical to the original SSD2007ATF. This indicates no moisture sensitivity restrictions for handling, storage, or reflow processes.

Q: Are the package dimensions identical across all three parts?

A: All three parts use 8-SOIC packaging with identical dimensions (0.154", 3.90mm Width). Physical footprint compatibility is confirmed for PCB layout purposes.

Q: What is the operating temperature range for each substitute?

A: The SSD2007ATF operates from -55°C to 150°C. The FDS9945 extends this range to -55°C to 175°C, providing additional thermal margin. The IRF7103TRPBF maintains the original range of -55°C to 150°C.