SS8050DBU Equivalent & Substitute Parts

Part Overview

The SS8050DBU is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for small-signal switching and amplification applications. This through-hole component operates at a maximum collector current of 1.5 A and collector-emitter breakdown voltage of 25 V, with a maximum power dissipation of 1 W. The device is currently in active production status with RoHS3 compliance and REACH unaffected classification. Equivalent and substitute parts are identified to support procurement flexibility, design continuity, and supply chain alternatives while maintaining identical electrical and mechanical specifications.

Substiute Parts

SS8050DBU

onsemiIn Stock: 126427SS8050DBU Datasheet

Current PartRFQ

SS8050DBU

Fairchild SemiconductorIn Stock: 126465SS8050DBU Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SS8050DBU is determined by strict equivalence across all critical electrical and mechanical parameters. The following parameters establish the substitution criteria:

Electrical Parameters:

• Transistor Type: NPN configuration
• Maximum Collector Current (Ic): 1.5 A
• Maximum Collector-Emitter Breakdown Voltage: 25 V
• Saturation Voltage (Vce): 500 mV @ 80 mA, 800 mA
• Collector Cutoff Current (ICBO): 100 nA maximum
• DC Current Gain (hFE): Minimum 160 @ 100 mA, 1 V
• Maximum Power Dissipation: 1 W
• Transition Frequency: 100 MHz

Mechanical Parameters:

• Mounting Type: Through Hole
• Package: TO-92-3 (TO-226AA)

Compliance Parameters:

• Product Status: Active
• RoHS Status: ROHS3 Compliant

Substitute parts must match all electrical specifications, maintain identical through-hole TO-92-3 packaging, and retain active product status with equivalent compliance certifications. Parametric equivalents from alternative manufacturers meeting these criteria are classified as direct substitutes.

Parameter Comparison

Engineering Selection Recommendations

The SS8050DBU from Fairchild Semiconductor is a parametric equivalent substitute for the onsemi SS8050DBU. Both devices are active products with identical electrical specifications across all critical parameters: collector current, breakdown voltage, saturation characteristics, current gain, power rating, and transition frequency. Both maintain through-hole TO-92-3 packaging for direct mechanical compatibility in existing circuit board layouts.

Selection between manufacturers should be based on:

Product Availability: Verify current inventory status and lead times from respective suppliers.

Compliance Requirements: The onsemi variant carries explicit ROHS3 compliance certification. Confirm compliance documentation for the Fairchild Semiconductor variant if RoHS certification is a design requirement.

Supply Chain Strategy: Use equivalent parts from alternative manufacturers to mitigate single-source supply risk and support procurement continuity.

Both devices are suitable for identical applications without circuit modification or re-qualification when electrical and mechanical parameters are the controlling factors.

Frequently Asked Questions (FAQ)

Q: Can the Fairchild Semiconductor SS8050DBU replace the onsemi SS8050DBU in existing designs?

A: Yes. Both devices are parametric equivalents with identical electrical specifications (collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency) and identical through-hole TO-92-3 packaging. Direct substitution is supported without circuit modification.

Q: What parameters determine substitution eligibility for the SS8050DBU?

A: Substitution is determined by matching the following parameters: NPN transistor type, 1.5 A maximum collector current, 25 V collector-emitter breakdown voltage, 500 mV saturation voltage at specified bias conditions, 100 nA collector cutoff current, 160 minimum DC current gain, 1 W maximum power dissipation, 100 MHz transition frequency, and TO-92-3 through-hole package configuration.

Q: Are there any package compatibility concerns when substituting between manufacturers?

A: No. Both the onsemi and Fairchild Semiconductor variants use identical TO-92-3 (TO-226AA) through-hole packaging. Pin configuration, lead spacing, and mounting requirements are identical, enabling direct board-level substitution.

Q: What is the difference between the onsemi and Fairchild Semiconductor versions?

A: Both versions are parametric equivalents with identical electrical and mechanical specifications. The primary difference is manufacturer source. The onsemi variant carries explicit ROHS3 compliance documentation. Verify compliance certifications with the Fairchild Semiconductor supplier if regulatory compliance is a design requirement.

Q: Can I use these parts interchangeably in production?

A: Yes, provided that compliance requirements (such as RoHS certification) are satisfied by both suppliers. Confirm that the selected manufacturer variant meets all applicable regulatory and quality standards for your application before production implementation.

Q: What should I verify before substituting to a different manufacturer?

A: Verify product status (both are active), electrical parameter equivalence (all parameters match), package compatibility (both use TO-92-3), and compliance certifications (confirm RoHS or other required standards are met by the substitute manufacturer).