SS8050-D-BP Equivalent & Substitute Parts

Part Overview

The SS8050-D-BP is a small-signal NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 25V collector-emitter breakdown voltage and 1.5A maximum collector current in a Through Hole TO-92 package. This device is classified as obsolete, necessitating identification of active equivalent parts for ongoing design support and procurement continuity. Substitute parts must maintain electrical and mechanical compatibility across critical performance parameters including voltage ratings, current capacity, saturation characteristics, and package configuration.

Substiute Parts

SS8050-D-BP

Micro Commercial CoIn Stock: 824SS8050-D-BP Datasheet

Current PartRFQ

SS8050CBU

onsemiIn Stock: 126356SS8050CBU Datasheet

MFR RecommendedRFQ

SS8050DBU

Fairchild SemiconductorIn Stock: 126465SS8050DBU Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SS8050-D-BP is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Transistor Type: NPN
• Current - Collector (Ic) Max: 1.5 A
• Voltage - Collector Emitter Breakdown (Max): 25 V
• Vce Saturation (Max): 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max): 100 nA
• Power - Max: 1 W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (TO-226AA)

Allowable Variation Parameters:

• DC Current Gain (hFE) Min: Minimum 120 @ 100mA, 1V (original specifies 160)
• Frequency - Transition: Minimum 100 MHz (original specifies 190 MHz)
• Operating Temperature: Maximum 150°C (original specifies -55 to 150°C)

All identified substitute parts maintain the mandatory electrical and mechanical specifications. Variations in transition frequency and DC current gain represent acceptable performance margins within the SS8050 series design envelope.

Parameter Comparison

Engineering Selection Recommendations

SS8050CBU (onsemi): This substitute is an active product with ROHS3 compliance and REACH unaffected status. The device maintains all mandatory electrical parameters with a minimum DC current gain of 120 @ 100mA, 1V, which is within acceptable tolerance for the SS8050 series. Transition frequency is specified at 100 MHz, representing a reduction from the original 190 MHz specification. This part is suitable for applications where the lower transition frequency does not constrain circuit performance.

SS8050DBU (Fairchild Semiconductor): This substitute is an active product with DC current gain matching the original specification at 160 @ 100mA, 1V. Transition frequency is specified at 100 MHz. All mandatory electrical and mechanical parameters are maintained. This part provides the closest electrical performance alignment to the original SS8050-D-BP.

Both substitute parts are active products with established supply chains, addressing the obsolescence status of the original device. Selection between SS8050CBU and SS8050DBU depends on application-specific requirements regarding DC current gain and transition frequency performance margins.

Frequently Asked Questions (FAQ)

Q: Can SS8050CBU and SS8050DBU be used interchangeably with SS8050-D-BP?

A: Both substitute parts maintain the mandatory electrical specifications (1.5A collector current, 25V breakdown voltage, 500mV saturation voltage, 100nA cutoff current, 1W power dissipation) and identical TO-92-3 package configuration. Interchangeability is determined by application-specific requirements for DC current gain and transition frequency. SS8050DBU provides closer alignment to the original hFE specification (160 vs. 120 for SS8050CBU).

Q: What is the significance of the transition frequency difference between the main part (190 MHz) and substitutes (100 MHz)?

A: Transition frequency (fT) defines the frequency at which current gain drops to unity. The original SS8050-D-BP specifies 190 MHz, while both substitutes specify 100 MHz. For applications operating below 100 MHz, this difference is not functionally significant. Applications requiring operation near or above 100 MHz require verification that the lower transition frequency does not degrade circuit performance.

Q: Are there temperature range differences between the main part and substitutes?

A: The original SS8050-D-BP specifies operating temperature from -55°C to 150°C. Both substitutes specify a maximum junction temperature of 150°C without explicit lower temperature specification. For applications requiring operation below 0°C, the original specification should be verified against substitute datasheets.

Q: What is the difference between SS8050CBU and SS8050DBU regarding DC current gain?

A: SS8050CBU specifies a minimum DC current gain of 120 @ 100mA, 1V, while SS8050DBU specifies 160 @ 100mA, 1V. The original SS8050-D-BP specifies 160. SS8050DBU provides exact hFE matching to the original part. SS8050CBU operates within acceptable tolerance for the SS8050 series but with lower current gain. Circuit designs with tight gain requirements should specify SS8050DBU.

Q: Are both substitute parts RoHS compliant?

A: SS8050CBU is ROHS3 compliant with REACH unaffected status. SS8050DBU RoHS status is not specified in the provided data. Compliance verification is required for applications with regulatory requirements.

Q: Does the TO-92-3 package configuration remain identical across all three parts?

A: Yes. The SS8050-D-BP, SS8050CBU, and SS8050DBU all use the TO-92-3 (TO-226AA) Through Hole package. Pin configuration and physical dimensions are identical, enabling direct mechanical substitution without PCB layout modification.