SS310HM6G Equivalent & Substitute Parts

Part Overview

The SS310HM6G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-214AB (SMC) surface mount package. This part is classified as discontinued at DiGi Electronics, which necessitates identification of functionally equivalent alternatives from active product lines. The device features fast recovery characteristics (≤500 ns) and automotive-grade qualification under AEC-Q101, making it suitable for power supply and rectification applications requiring reliable performance across extended temperature ranges.

Substiute Parts

SS310HM6G
Taiwan Semiconductor CorporationIn Stock: 832SS310HM6G Datasheet
SS310HM6G
Current Part
SS310H
Taiwan Semiconductor CorporationIn Stock: 3784SS310H Datasheet
SS310H
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CGRC502-G
Comchip TechnologyIn Stock: 887CGRC502-G Datasheet
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CSFC302-G
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CURC302-G
Comchip TechnologyIn Stock: 750CURC302-G Datasheet
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ES3B
Taiwan Semiconductor CorporationIn Stock: 10461ES3B Datasheet
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ES3B-13-F
Diodes IncorporatedIn Stock: 10183ES3B-13-F Datasheet
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ES3BB-13-F
Diodes IncorporatedIn Stock: 126266ES3BB-13-F Datasheet
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ESH3B-E3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 10475ESH3B-E3/57T Datasheet
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ESH3B-E3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1078ESH3B-E3/9AT Datasheet
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ESH3B-M3/57T
Vishay General Semiconductor - Diodes DivisionIn Stock: 884ESH3B-M3/57T Datasheet
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ESH3B-M3/9AT
Vishay General Semiconductor - Diodes DivisionIn Stock: 1170ESH3B-M3/9AT Datasheet
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RS3B-13-F
Diodes IncorporatedIn Stock: 9168RS3B-13-F Datasheet
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RS3BB-13-F
Diodes IncorporatedIn Stock: 3201RS3BB-13-F Datasheet
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RS3BHE3_A/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 831RS3BHE3_A/H Datasheet
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S3B
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S3B-13-F
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S3B-TP
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S3BB-13-F
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Vishay General Semiconductor - Diodes DivisionIn Stock: 12243U3B-E3/57T Datasheet
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Vishay General Semiconductor - Diodes DivisionIn Stock: 824U3B-E3/9AT Datasheet
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 3 A mV
Speed Fast Recovery ≤500 ns, >200 mA (Io) ns
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Package / Case DO-214AB, SMC
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the SS310HM6G is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3 A
  • Package / Case: DO-214AB (SMC)
  • Mounting Type: Surface Mount
  • Speed Classification: Fast Recovery (≤500 ns, >200 mA)

Secondary Compatibility Factors:

  • Forward voltage (Vf) at rated current
  • Reverse leakage current
  • Operating temperature range
  • RoHS and regulatory compliance

Substitute parts are grouped into two categories:

Direct Functional Equivalents: Parts matching all primary criteria with identical electrical performance specifications. These include SS310H (Taiwan Semiconductor Corporation), ES3B (Taiwan Semiconductor Corporation), ES3B-13-F (Diodes Incorporated), ESH3B-E3/57T (Vishay), ESH3B-E3/9AT (Vishay), ESH3B-M3/57T (Vishay), CSFC302-G (Comchip Technology), and CURC302-G (Comchip Technology).

Functional Alternatives with Parameter Variance: Parts meeting primary voltage, current, and package requirements but with acceptable deviations in secondary parameters. CGRC502-G (Comchip Technology) is rated for 5 A current capacity, exceeding the 3 A requirement, and is suitable where higher current margin is acceptable. ES3BB-13-F uses DO-214AA (SMB) package instead of DO-214AB (SMC), requiring PCB layout modification.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Speed Ir @ Vr [µA] Package Temp Range [°C] Status
SS310HM6G Taiwan Semiconductor 100 3 850 @ 3A Fast Recovery ≤500 ns 100 @ 100V DO-214AB (SMC) -55 to 150 Discontinued
SS310H Taiwan Semiconductor 100 3 850 @ 3A Fast Recovery ≤500 ns 100 @ 100V DO-214AB (SMC) -55 to 150 Active
ES3B Taiwan Semiconductor 100 3 950 @ 3A Fast Recovery ≤500 ns 10 @ 100V DO-214AB (SMC) -55 to 150 Active
ES3B-13-F Diodes Incorporated 100 3 900 @ 3A Fast Recovery ≤500 ns 10 @ 100V DO-214AB (SMC) -55 to 150 Active
ESH3B-E3/57T Vishay General Semiconductor 100 3 900 @ 3A Fast Recovery ≤500 ns 5 @ 100V DO-214AB (SMC) -55 to 175 Active
ESH3B-E3/9AT Vishay General Semiconductor 100 3 900 @ 3A Fast Recovery ≤500 ns 5 @ 100V DO-214AB (SMC) -55 to 175 Active
ESH3B-M3/57T Vishay General Semiconductor 100 3 900 @ 3A Fast Recovery ≤500 ns 5 @ 100V DO-214AB (SMC) -55 to 175 Active
CSFC302-G Comchip Technology 100 3 950 @ 3A Fast Recovery ≤500 ns 5 @ 100V DO-214AB (SMC) -55 to 150 Active
CURC302-G Comchip Technology 100 3 1000 @ 3A Fast Recovery ≤500 ns 5 @ 100V DO-214AB (SMC) -55 to 150 Active
CGRC502-G Comchip Technology 100 5 1150 @ 5A Standard Recovery >500 ns 10 @ 100V DO-214AB (SMC) -55 to 150 Active
ES3BB-13-F Diodes Incorporated 100 3 900 @ 3A Fast Recovery ≤500 ns 10 @ 100V DO-214AA (SMB) -55 to 150 Active

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended):

SS310H (Taiwan Semiconductor Corporation) is the primary direct replacement. This part maintains identical electrical specifications to the SS310HM6G, including 100 V reverse voltage, 3 A current rating, 850 mV forward voltage at 3 A, and fast recovery characteristics. The device is currently active in production with 3715 units in stock. Both parts share automotive-grade qualification (AEC-Q101), ROHS3 compliance, and identical operating temperature range (-55°C to 150°C). The only distinction is packaging format (Tape & Reel vs. bulk), which does not affect electrical performance.

ES3B-13-F (Diodes Incorporated) and ES3B (Taiwan Semiconductor Corporation) are functionally equivalent alternatives. Both maintain the 100 V / 3 A rating and DO-214AB package. Forward voltage is slightly elevated (900-950 mV vs. 850 mV), but remains within acceptable tolerance for general-purpose rectification. Reverse leakage is reduced (10 µA vs. 100 µA), indicating superior blocking characteristics. Both are active products with substantial inventory availability (10,100 and 10,400 units respectively).

Tier 2 - Acceptable Substitutes with Extended Temperature Range:

ESH3B-E3/57T, ESH3B-E3/9AT, and ESH3B-M3/57T (Vishay General Semiconductor - Diodes Division) provide identical electrical performance with extended maximum junction temperature (175°C vs. 150°C). Forward voltage is 900 mV at 3 A, and reverse leakage is reduced to 5 µA. These parts are suitable for applications requiring higher thermal margin. All three variants are active products.

Tier 3 - Acceptable Substitutes with Minor Parameter Variance:

CSFC302-G and CURC302-G (Comchip Technology) meet all primary substitution criteria with fast recovery speed and identical voltage/current ratings. Forward voltage ranges from 950 mV to 1000 mV at 3 A, representing acceptable variance for rectification applications. Reverse leakage is 5 µA, superior to the original specification. Both are active products with adequate inventory (800 and 687 units respectively).

Not Recommended:

CGRC502-G (Comchip Technology) exceeds the 3 A current specification at 5 A and exhibits standard recovery speed (>500 ns) rather than fast recovery. This part is suitable only where higher current capacity is required and recovery speed is not critical.

ES3BB-13-F (Diodes Incorporated) uses DO-214AA (SMB) package instead of DO-214AB (SMC), requiring PCB layout modification and different land pattern. This substitution is valid only where package change is acceptable.

Frequently Asked Questions (FAQ)

Q: Can SS310H be used as a direct replacement for SS310HM6G?

A: Yes. SS310H is manufactured by the same supplier (Taiwan Semiconductor Corporation) and maintains identical electrical specifications: 100 V reverse voltage, 3 A current rating, 850 mV forward voltage at 3 A, fast recovery characteristics, and automotive-grade AEC-Q101 qualification. The only difference is packaging format (Tape & Reel). Electrical performance is equivalent.

Q: What is the significance of forward voltage (Vf) differences between substitute parts?

A: Forward voltage determines power dissipation in the diode during conduction. The SS310HM6G specifies 850 mV at 3 A. Substitute parts with 900-950 mV forward voltage will dissipate approximately 150-300 mW additional power at rated current. For most general-purpose rectification applications, this variance is acceptable. Applications with strict thermal budgets should prioritize parts with lower forward voltage (ES3B-13-F at 900 mV, ESH3B variants at 900 mV).

Q: Are all substitute parts automotive-qualified?

A: No. The SS310HM6G carries automotive-grade classification with AEC-Q101 qualification. Among substitutes, only SS310H explicitly maintains automotive-grade status. ES3B, ES3B-13-F, ESH3B variants, CSFC302-G, CURC302-G, CGRC502-G, and ES3BB-13-F do not list automotive-grade or AEC-Q101 qualification in the provided specifications. For automotive applications, SS310H is the appropriate choice.

Q: What is the difference between DO-214AB (SMC) and DO-214AA (SMB) packages?

A: DO-214AB (SMC) and DO-214AA (SMB) are distinct surface mount packages with different physical dimensions and PCB land patterns. ES3BB-13-F uses DO-214AA (SMB), which is not pin-compatible with DO-214AB (SMC) without PCB redesign. Substitution with ES3BB-13-F requires layout modification and is not recommended for direct replacement without engineering review.

Q: Why does CGRC502-G have a higher current rating (5 A vs. 3 A)?

A: CGRC502-G is designed for higher current applications. The 5 A rating provides additional current margin but does not improve performance at 3 A operation. However, CGRC502-G exhibits standard recovery speed (>500 ns) rather than fast recovery (≤500 ns), which may impact switching characteristics in time-sensitive applications. This part is suitable only where higher current capacity is required and recovery speed is not critical.

Q: What does "Fast Recovery ≤500 ns" mean for rectifier selection?

A: Recovery time (trr) is the interval required for a diode to transition from forward conduction to reverse blocking after current reversal. Fast recovery (≤500 ns) is essential in switching power supplies and high-frequency rectification circuits to minimize reverse recovery current and associated losses. Standard recovery (>500 ns) is acceptable for line-frequency (50/60 Hz) rectification but unsuitable for switching applications. All recommended Tier 1 and Tier 2 substitutes maintain fast recovery characteristics.

Q: Can reverse leakage current differences affect circuit performance?

A: Reverse leakage current (Ir) determines the blocking quality of the diode in reverse bias. The SS310HM6G specifies 100 µA at 100 V, while most substitutes specify 5-10 µA. Lower leakage current reduces standby power consumption and improves DC blocking performance. Substitutes with lower leakage (5-10 µA) are superior in this respect and will not cause compatibility issues.

Q: Is RoHS3 compliance mandatory for all substitutes?

A: All substitute parts listed are ROHS3 compliant, matching the original SS310HM6G specification. RoHS3 compliance is a regulatory requirement in most markets and should be verified for any additional parts considered outside this list.

Q: What is the impact of operating temperature range differences?

A: The SS310HM6G specifies -55°C to 150°C junction temperature range. ESH3B variants (Vishay) extend this to -55°C to 175°C, providing 25°C additional thermal margin. This is beneficial for high-temperature applications but not required for standard operation. Comchip parts (CSFC302-G, CURC302-G, CGRC502-G) specify -55°C to 150°C maximum, matching the original specification.

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