SS2H9HE3_A/I Equivalent & Substitute Parts

Part Overview

The SS2H9HE3_A/I is a Schottky rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 90 V DC reverse voltage and 2 A average rectified current in a surface mount DO-214AA (SMB) package. This component is classified as Active product status and carries AEC-Q100 automotive qualification. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges.

Substiute Parts

SS2H9HE3_A/I

Vishay General Semiconductor - Diodes DivisionIn Stock: 1103SS2H9HE3_A/I Datasheet

Current PartRFQ

SS2H9-E3/52T

Vishay General Semiconductor - Diodes DivisionIn Stock: 1852SS2H9-E3/52T Datasheet

Parametric EquivalentRFQ

SS2H9-E3/5BT

Vishay General Semiconductor - Diodes DivisionIn Stock: 11771SS2H9-E3/5BT Datasheet

Parametric EquivalentRFQ

SS29

Taiwan Semiconductor CorporationIn Stock: 10457SS29 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the SS2H9HE3_A/I is determined by the following critical parameters:

Electrical Equivalence Criteria:

• Voltage - DC Reverse (Vr) (Max): 90 V minimum
• Current - Average Rectified (Io): 2 A minimum
• Technology: Schottky
• Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
• Package / Case: DO-214AA, SMB (surface mount)

Compliance & Status Criteria:

• Product Status: Active
• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected

Substitute parts are classified into two categories: Parametric Equivalents (identical electrical specifications and automotive qualification) and Manufacturer Recommended (equivalent performance with minor parameter variations within acceptable operating ranges).

Parameter Comparison

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitutes):

SS2H9-E3/52T and SS2H9-E3/5BT are parametric equivalents of the SS2H9HE3_A/I. Both parts are manufactured by Vishay General Semiconductor - Diodes Division and share identical electrical specifications: 90 V reverse voltage, 2 A average rectified current, 790 mV forward voltage drop at 2 A, and fast recovery characteristics. Both maintain the same operating temperature range (-65°C to 175°C) and package configuration (DO-214AA, SMB). These parts are suitable for direct substitution in applications where the main part is unavailable. Both are Active status products with ROHS3 compliance and REACH Unaffected status.

Manufacturer Recommended Substitute:

SS29 (Taiwan Semiconductor Corporation) is designated as a manufacturer-recommended substitute. This part meets the core electrical requirements: 90 V reverse voltage, 2 A average rectified current, and fast recovery characteristics in the same DO-214AA, SMB package. However, the following parameter variations exist and must be evaluated for application compatibility:

• Forward voltage drop: 850 mV @ 2 A (versus 790 mV for the main part) — represents a 60 mV increase in forward voltage
• Reverse leakage current: 100 µA @ 90 V (versus 10 µA for the main part) — represents a 10-fold increase in leakage current
• Operating temperature range: -55°C to 150°C (versus -65°C to 175°C for the main part) — represents a narrower temperature operating window

The SS29 is Active status, ROHS3 compliant, and REACH Unaffected. Selection of this substitute requires confirmation that the increased forward voltage drop and reverse leakage current are acceptable within the circuit design parameters and that the reduced temperature range does not conflict with application requirements.

Frequently Asked Questions (FAQ)

Q: Can SS2H9-E3/52T and SS2H9-E3/5BT be used interchangeably with SS2H9HE3_A/I?

A: Yes. Both parts are parametric equivalents with identical electrical specifications, operating temperature range, and package configuration. They are suitable for direct substitution without circuit modification.

Q: What are the key differences between the Vishay parts and the Taiwan Semiconductor SS29?

A: The SS29 exhibits three measurable parameter differences: forward voltage drop is 60 mV higher (850 mV versus 790 mV at 2 A), reverse leakage current is 10 times higher (100 µA versus 10 µA at 90 V), and the operating temperature range is narrower (-55°C to 150°C versus -65°C to 175°C). These differences must be evaluated against circuit design requirements before substitution.

Q: Are all substitute parts available in the same packaging?

A: Yes. All listed substitute parts use the DO-214AA (SMB) surface mount package, ensuring mechanical and footprint compatibility on printed circuit boards.

Q: Do the substitute parts carry automotive qualification?

A: The Vishay parametric equivalents (SS2H9-E3/52T and SS2H9-E3/5BT) maintain the same automotive qualification status as the main part. The Taiwan Semiconductor SS29 does not list AEC-Q100 qualification in the provided specifications.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are ROHS3 compliant and REACH Unaffected. The Vishay parts maintain the same ECCN (EAR99) and HTSUS (8541.10.0080) classifications as the main part.

Q: How does the increased forward voltage drop of the SS29 affect circuit performance?

A: The 60 mV increase in forward voltage drop at 2 A will result in higher power dissipation in the diode. Thermal design and circuit efficiency calculations must account for this difference. The impact is application-dependent and requires evaluation within the specific circuit context.

Q: Is the higher reverse leakage current of the SS29 a concern?

A: The 10-fold increase in reverse leakage current (100 µA versus 10 µA at 90 V) may impact circuit performance in applications sensitive to leakage current, such as precision analog circuits or low-power standby modes. Application requirements must be assessed before substitution.