SS2FN6-M3/H Equivalent & Substitute Parts

Part Overview

The SS2FN6-M3/H is a Schottky rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, designed for surface mount applications in the DO-219AB package. This component operates at 60V reverse voltage with a 2A average rectified current rating and is part of the eSMP® series. The part is currently in active production status with 1,081 pieces available in inventory. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications requiring identical electrical and mechanical specifications.

Substiute Parts

SS2FN6-M3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 1146SS2FN6-M3/H Datasheet
SS2FN6-M3/H
Current Part
SS2FN6HM3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 25896SS2FN6HM3/H Datasheet
SS2FN6HM3/H
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 2 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 900 µA @ 60 V
Capacitance @ Vr, F 100 pF @ 4V, 1MHz
Package / Case DO-219AB (SMF)
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Schottky
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the SS2FN6-M3/H is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part SS2FN6HM3/H shares identical specifications in the following key areas:

  • Reverse voltage rating: 60V
  • Average rectified current: 2A
  • Forward voltage drop: 600 mV @ 2A
  • Recovery speed: Fast Recovery ≤ 500ns, > 200mA
  • Reverse leakage current: 900 µA @ 60V
  • Junction capacitance: 100 pF @ 4V, 1MHz
  • Package type: DO-219AB (SMF)
  • Mounting configuration: Surface Mount
  • Operating temperature range: -55°C to 150°C
  • Technology: Schottky
  • RoHS compliance: ROHS3 Compliant

Both parts are manufactured by Vishay General Semiconductor - Diodes Division and belong to the eSMP® series. The substitute part carries additional automotive-grade qualification (AEC-Q101) and is classified as Grade: Automotive, with Moisture Sensitivity Level (MSL) of 1 (Unlimited).

Parameter Comparison

Parameter SS2FN6-M3/H SS2FN6HM3/H Match
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Yes
Category Diodes, Rectifiers Diodes, Rectifiers Yes
Series eSMP® eSMP® Yes
Technology Schottky Schottky Yes
Voltage - DC Reverse (Vr) (Max) 60 V 60 V Yes
Current - Average Rectified (Io) 2 A 2 A Yes
Voltage - Forward (Vf) (Max) @ If 600 mV @ 2 A 600 mV @ 2 A Yes
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Yes
Current - Reverse Leakage @ Vr 900 µA @ 60 V 900 µA @ 60 V Yes
Capacitance @ Vr, F 100 pF @ 4V, 1MHz 100 pF @ 4V, 1MHz Yes
Package / Case DO-219AB (SMF) DO-219AB (SMF) Yes
Mounting Type Surface Mount Surface Mount Yes
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C Yes
RoHS Status ROHS3 Compliant ROHS3 Compliant Yes
REACH Status REACH Unaffected REACH Unaffected Yes
Product Status Active Active Yes

Engineering Selection Recommendations

Both the SS2FN6-M3/H and SS2FN6HM3/H are active production components from Vishay General Semiconductor - Diodes Division with full ROHS3 compliance and REACH Unaffected status. Selection between these parts should be based on application requirements and supply chain considerations.

The SS2FN6-M3/H is suitable for general-purpose rectification applications requiring 60V, 2A Schottky diode performance in surface mount DO-219AB packaging.

The SS2FN6HM3/H provides identical electrical and mechanical specifications with the addition of automotive-grade qualification (AEC-Q101) and MSL 1 (Unlimited) moisture sensitivity rating. This variant is appropriate for applications requiring automotive-grade reliability or extended moisture exposure tolerance during storage and handling.

Both parts are electrically and mechanically interchangeable within the specified parameter ranges. Selection should account for application classification, supply availability, and any specific qualification requirements mandated by the end-use system.

Frequently Asked Questions (FAQ)

Q: Are SS2FN6-M3/H and SS2FN6HM3/H electrically identical?

A: Yes. Both parts share identical electrical specifications including 60V reverse voltage, 2A average rectified current, 600 mV forward voltage drop at 2A, fast recovery characteristics, and reverse leakage current of 900 µA at 60V.

Q: What is the difference between these two part numbers?

A: The SS2FN6HM3/H carries automotive-grade qualification (AEC-Q101) and has MSL 1 (Unlimited) moisture sensitivity rating, whereas the SS2FN6-M3/H does not specify these qualifications. Both are manufactured by Vishay and belong to the eSMP® series.

Q: Can I use SS2FN6HM3/H as a direct replacement for SS2FN6-M3/H?

A: Yes. The SS2FN6HM3/H is a direct substitute with identical electrical and mechanical parameters. It can be used in any application designed for the SS2FN6-M3/H without circuit modification.

Q: Can I use SS2FN6-M3/H as a direct replacement for SS2FN6HM3/H?

A: Yes. The SS2FN6-M3/H is electrically and mechanically equivalent. However, if the application specifically requires automotive-grade qualification or MSL 1 moisture sensitivity rating, the SS2FN6HM3/H is the appropriate choice.

Q: Are both parts available in the same package?

A: Yes. Both parts use the DO-219AB (SMF) surface mount package with identical mechanical dimensions and land pattern requirements.

Q: What is the operating temperature range for these diodes?

A: Both parts operate across a junction temperature range of -55°C to 150°C, suitable for industrial and automotive temperature environments.

Q: Are these parts RoHS compliant?

A: Yes. Both SS2FN6-M3/H and SS2FN6HM3/H are ROHS3 compliant and REACH Unaffected.

Q: What is the reverse recovery time specification?

A: Both parts are classified as Fast Recovery with recovery time ≤ 500ns for currents greater than 200mA (Io).

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