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SS2FN6HM3/I Equivalent & Substitute Parts
Part Overview
The SS2FN6HM3/I is a Schottky rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, classified within the Diodes, Rectifiers category. This component is rated for 60V DC reverse voltage with a 2A average rectified current capacity and is housed in a DO-219AB surface mount package. The part is actively produced and carries automotive-grade qualification under AEC-Q101 standards. Substitute parts are identified when equivalent electrical and mechanical specifications are required due to inventory constraints, supply chain considerations, or design flexibility needs while maintaining identical functional performance.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 2 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 900 µA @ 60 V |
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz |
| Package / Case | DO-219AB (SMF) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Technology | Schottky |
Substitute Part Grouping Explanation
Substitute parts for the SS2FN6HM3/I are identified based on strict electrical and mechanical parameter equivalence. The substitution logic is based on the following critical parameters that must remain identical:
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
- Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 900 µA @ 60 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Package / Case: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
- Grade: Automotive
- Qualification: AEC-Q101
- Technology: Schottky
Parts meeting all these specifications are classified as parametric equivalents and direct substitutes. The SS2FN6HM3/H is identified as a parametric equivalent based on complete alignment with all electrical and mechanical parameters.
Parameter Comparison
| Parameter | SS2FN6HM3/I | SS2FN6HM3/H |
|---|---|---|
| Manufacturer | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Category | Diodes, Rectifiers | Diodes, Rectifiers |
| Technology | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 60 V |
| Current - Average Rectified (Io) | 2 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 2 A | 600 mV @ 2 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 900 µA @ 60 V | 900 µA @ 60 V |
| Capacitance @ Vr, F | 100pF @ 4V, 1MHz | 100pF @ 4V, 1MHz |
| Package / Case | DO-219AB (SMF) | DO-219AB (SMF) |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C |
| Grade | Automotive | Automotive |
| Qualification | AEC-Q101 | AEC-Q101 |
| Series | eSMP® | eSMP® |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.10.0080 | 8541.10.0080 |
Engineering Selection Recommendations
Both the SS2FN6HM3/I and SS2FN6HM3/H are active products manufactured by Vishay General Semiconductor - Diodes Division with identical electrical and mechanical specifications. Both components carry automotive-grade qualification under AEC-Q101 standards and comply with ROHS3 and REACH regulatory requirements. Selection between these parts is based on availability and supply chain requirements, as they are functionally interchangeable in all applications requiring a 60V, 2A Schottky rectifier diode in DO-219AB surface mount packaging. Both parts operate across the -55°C to 150°C junction temperature range and maintain identical forward voltage, reverse leakage, and capacitance characteristics.
Frequently Asked Questions (FAQ)
Q: Can SS2FN6HM3/H be used as a direct replacement for SS2FN6HM3/I?
A: Yes. The SS2FN6HM3/H is a parametric equivalent with identical electrical ratings (60V reverse voltage, 2A average rectified current, 600mV forward voltage at 2A), identical package type (DO-219AB), identical operating temperature range (-55°C to 150°C), and identical automotive qualification (AEC-Q101). Direct substitution is supported in all circuit applications.
Q: Are there any differences in package or mounting between these parts?
A: No. Both parts use the DO-219AB (SMF) surface mount package and are supplied in Tape & Reel (TR) packaging format. Mounting footprints and PCB assembly processes are identical.
Q: Do both parts meet automotive qualification requirements?
A: Yes. Both the SS2FN6HM3/I and SS2FN6HM3/H carry automotive-grade classification with AEC-Q101 qualification. Both comply with ROHS3 and REACH regulatory standards.
Q: What are the key electrical parameters that define substitution eligibility?
A: Substitution eligibility is determined by matching the following parameters: 60V maximum DC reverse voltage, 2A average rectified current, 600mV maximum forward voltage at 2A, fast recovery speed (≤500ns for currents >200mA), 900µA reverse leakage current at 60V, and 100pF capacitance at 4V and 1MHz. Both parts meet all these specifications.
Q: Are there any temperature or environmental differences between these parts?
A: No. Both parts operate across the identical junction temperature range of -55°C to 150°C and carry the same environmental compliance certifications (ROHS3 Compliant, REACH Unaffected).
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