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SS210LHRVG Equivalent & Substitute Parts
Part Overview
The SS210LHRVG is a Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 2 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance. Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility, and operational specifications to support component procurement flexibility and supply chain continuity.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | SS210LHRVG |
| Manufacturer | Taiwan Semiconductor Corporation |
| Category | Diodes, Rectifiers |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 2 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute parts for the SS210LHRVG are classified into two categories based on electrical and mechanical parameter alignment:
Parametric Equivalent (Direct Substitution): Parts that match all critical electrical parameters including reverse voltage rating (100 V), average rectified current (2 A), forward voltage drop (850 mV @ 2 A), and package configuration (DO-219AB Sub SMA). These parts maintain identical functional performance and are interchangeable without circuit redesign.
Similar Parts (Current-Reduced Alternatives): Parts that match reverse voltage rating (100 V) and package configuration (DO-219AB) but operate at reduced average rectified current (1 A instead of 2 A). These parts are suitable for applications where the full 2 A current rating is not required. Forward voltage characteristics and reverse leakage specifications differ from the main part.
Substitution eligibility is determined by the following key parameters:
- Voltage - DC Reverse (Vr) (Max): 100 V (required match)
- Package / Case: DO-219AB (required match)
- Mounting Type: Surface Mount (required match)
- Current - Average Rectified (Io): 2 A (for direct equivalents) or 1 A (for reduced-current alternatives)
- Technology: Schottky (required match)
Parameter Comparison
| Parameter | SS210LHRVG (Main) | SS210L RVG | SS1FH10-M3/H | SS1FH10HM3/H | SS2FH10-M3/H | SS2FH10HM3/H |
|---|---|---|---|---|---|---|
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Vishay General Semiconductor | Vishay General Semiconductor | Vishay General Semiconductor | Vishay General Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 2 A | 2 A | 1 A | 1 A | 2 A | 2 A |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 2 A | 850 mV @ 2 A | 800 mV @ 1 A | 800 mV @ 1 A | 860 mV @ 2 A | 860 mV @ 2 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA | Fast Recovery ≤ 500ns, > 200mA |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V | 100 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 10 V | 5 µA @ 100 V |
| Package / Case | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB | DO-219AB |
| Supplier Device Package | Sub SMA | Sub SMA | DO-219AB (SMF) | DO-219AB (SMF) | DO-219AB (SMF) | DO-219AB (SMF) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Technology | Schottky | Schottky | Schottky | Schottky | Schottky | Schottky |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Grade | Automotive | Not specified | Not specified | Automotive | Not specified | Automotive |
| Qualification | AEC-Q101 | Not specified | Not specified | AEC-Q101 | Not specified | AEC-Q101 |
Engineering Selection Recommendations
SS210L RVG (Taiwan Semiconductor Corporation): This part is a parametric equivalent to the SS210LHRVG with identical electrical specifications and package configuration. Both parts are manufactured by Taiwan Semiconductor Corporation and share the same base product number (SS210). The SS210L RVG is suitable for direct substitution in applications requiring 100 V, 2 A Schottky rectification. Product status is Active. Compliance status matches the main part (ROHS3, REACH Unaffected).
SS1FH10HM3/H (Vishay General Semiconductor - Diodes Division): This part is classified as a similar alternative with reduced current rating (1 A versus 2 A). It maintains the 100 V reverse voltage rating and DO-219AB package compatibility. This part carries AEC-Q101 automotive qualification and Automotive grade designation, matching the main part's compliance profile. Operating temperature range extends to 175°C. Selection of this part is appropriate only for circuits where the 1 A current requirement is sufficient.
SS2FH10HM3/H (Vishay General Semiconductor - Diodes Division): This part matches the main part's 2 A current rating and 100 V reverse voltage specification. It is manufactured by Vishay General Semiconductor in the eSMP® series with DO-219AB package configuration. This part carries AEC-Q101 automotive qualification and Automotive grade designation. Operating temperature range extends to 175°C. Forward voltage specification is 860 mV @ 2 A, which is within acceptable tolerance of the main part's 850 mV specification. This part is suitable for direct substitution in automotive applications.
SS2FH10-M3/H (Vishay General Semiconductor - Diodes Division): This part matches the main part's 2 A current rating and 100 V reverse voltage specification in the eSMP® series. Package configuration is DO-219AB. Product status is Active with ROHS3 compliance. Forward voltage specification is 860 mV @ 2 A. This part does not carry explicit automotive grade or AEC-Q101 qualification designation. Selection of this part is appropriate for non-automotive applications or where automotive qualification is not required.
SS1FH10-M3/H (Vishay General Semiconductor - Diodes Division): This part is classified as a similar alternative with reduced current rating (1 A versus 2 A). It maintains the 100 V reverse voltage rating and DO-219AB package compatibility in the eSMP® series. Product status is Active with ROHS3 compliance. This part does not carry explicit automotive grade or AEC-Q101 qualification designation. Selection of this part is appropriate for non-automotive applications where the 1 A current requirement is sufficient.
Frequently Asked Questions (FAQ)
Q: Can SS210L RVG be used as a direct replacement for SS210LHRVG?
A: Yes. SS210L RVG is a parametric equivalent with identical electrical specifications (100 V reverse voltage, 2 A average rectified current, 850 mV forward voltage @ 2 A) and package configuration (DO-219AB Sub SMA). Both parts are manufactured by Taiwan Semiconductor Corporation and share the same base product number.
Q: What is the difference between the 1 A and 2 A rated parts?
A: The primary difference is the average rectified current rating. Parts rated for 1 A (SS1FH10-M3/H, SS1FH10HM3/H) are suitable for applications requiring lower current handling. Parts rated for 2 A (SS210LHRVG, SS210L RVG, SS2FH10-M3/H, SS2FH10HM3/H) support higher current applications. All parts maintain the same 100 V reverse voltage rating and DO-219AB package configuration.
Q: Are Vishay parts suitable replacements for Taiwan Semiconductor parts?
A: Vishay parts with matching electrical specifications and package configuration are functionally compatible. SS2FH10HM3/H and SS2FH10-M3/H both provide 100 V, 2 A Schottky rectification in DO-219AB packages. Forward voltage specifications differ slightly (860 mV versus 850 mV @ 2 A), which is within normal manufacturing tolerance. Selection depends on application requirements and compliance certifications needed.
Q: Which substitute parts carry automotive qualification?
A: SS1FH10HM3/H and SS2FH10HM3/H both carry AEC-Q101 qualification and Automotive grade designation, matching the main part's compliance profile. These parts are suitable for automotive applications requiring certified components.
Q: What is the difference between Sub SMA and DO-219AB (SMF) package designations?
A: Both designations refer to the same physical package form factor (DO-219AB). Sub SMA and DO-219AB (SMF) are equivalent supplier package designations for surface mount Schottky diodes. Parts are mechanically and electrically interchangeable based on this package specification.
Q: Can 1 A rated parts be used in circuits designed for 2 A operation?
A: No. Using a 1 A rated part in a circuit requiring 2 A operation exceeds the component's current rating and results in device failure or degradation. Current rating must match or exceed circuit requirements.
Q: What is the operating temperature range difference between substitute parts?
A: The main part (SS210LHRVG) operates from -55°C to 150°C junction temperature. Vishay substitute parts (SS1FH10-M3/H, SS1FH10HM3/H, SS2FH10-M3/H, SS2FH10HM3/H) extend the upper operating temperature to 175°C. This extended range provides additional thermal margin in high-temperature applications.
Q: Are all substitute parts ROHS3 compliant?
A: Yes. All listed substitute parts carry ROHS3 compliance status, matching the main part's environmental compliance requirement.
Q: What is the reverse leakage current difference between parts?
A: The main part (SS210LHRVG) specifies 100 µA reverse leakage @ 100 V. Vishay substitute parts specify 5 µA reverse leakage @ 100 V (or @ 10 V for SS2FH10-M3/H), indicating lower leakage characteristics. Lower reverse leakage may provide improved performance in sensitive applications.
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