SS16HE Schottky Diode Equivalent & Substitute Parts

Part Overview

The SS16HE is a 60V, 1A Schottky rectifier diode manufactured by onsemi in SOD-323HE surface mount packaging. This component is classified as "Not For New Designs," indicating it has reached end-of-life status. The diode is qualified to AEC-Q101 automotive standards and features fast recovery characteristics with an 8.3 ns reverse recovery time, making it suitable for high-frequency switching applications.

Due to its discontinued design status, equivalent and substitute parts are necessary for ongoing production support, maintenance applications, and design continuity. Suitable alternatives maintain the same electrical performance envelope while offering either active product status or improved availability.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	60	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	680	mV @ 1 A
Reverse Recovery Time (trr)	8.3	ns
Current - Reverse Leakage @ Vr	50	µA @ 60 V
Capacitance @ Vr, F	43	pF @ 4V, 1MHz
Technology	Schottky	—
Mounting Type	Surface Mount	—
Operating Temperature - Junction	-55 to 150	°C
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the SS16HE is determined by the following critical parameters:

Voltage Rating (Vr): 60V maximum reverse voltage
Current Rating (Io): 1A average rectified current
Forward Voltage (Vf): 680 mV maximum at 1A
Technology: Schottky diode
Mounting: Surface mount configuration
Temperature Range: -55°C to 150°C junction operating range
Compliance: RoHS3 and REACH compliance required

Substitute parts are classified into two categories:

Parametric Equivalents maintain identical electrical specifications and package form factors, enabling direct replacement without circuit modification.

Similar Parts meet the core voltage, current, and temperature requirements but may differ in secondary parameters such as reverse leakage current, capacitance, or package geometry. These parts require verification of mechanical fit and thermal characteristics in the target application.

Parameter Comparison

Parameter	SS16HE (onsemi)	NRVBSS16HE (onsemi)	SS16M (TSC)	SS16MH (TSC)	MSS1P6-M3/89A (Vishay)	SS1060VHEWS_R1_00001 (Panjit)
Voltage - DC Reverse (Vr) (Max)	60 V	60 V	60 V	60 V	60 V	60 V
Current - Average Rectified (Io)	1 A	1 A	1 A	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	680 mV @ 1 A	680 mV @ 1 A	680 mV @ 1 A	680 mV @ 1 A	680 mV @ 1 A	600 mV @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	8.3 ns	8.3 ns	Not specified	Not specified	Not specified	Not specified
Current - Reverse Leakage @ Vr	50 µA @ 60 V	50 µA @ 60 V	50 µA @ 60 V	50 µA @ 60 V	150 µA @ 60 V	100 µA @ 60 V
Capacitance @ Vr, F	43 pF @ 4V, 1MHz	43 pF @ 4V, 1MHz	40 pF @ 4V, 1MHz	40 pF @ 4V, 1MHz	40 pF @ 4V, 1MHz	136 pF @ 0V, 1MHz
Package / Case	2-SMD, Flat Lead (SOD-323HE)	2-SMD, Flat Lead (SOD-323HE)	2-SMD, Flat Lead (Micro SMA)	2-SMD, Flat Lead (Micro SMA)	MicroSMP (DO-219AD)	SC-90, SOD-323F (SOD-323HE)
Operating Temperature - Junction	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Product Status	Not For New Designs	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

NRVBSS16HE (onsemi) is a parametric equivalent offering identical electrical specifications and SOD-323HE packaging. Although classified as "Not For New Designs," it provides direct compatibility for legacy system support. This part is suitable for applications requiring exact performance matching with the original SS16HE.

SS16M and SS16MH (Taiwan Semiconductor Corporation) are parametric equivalents with active product status. Both parts maintain the 60V/1A rating, 680 mV forward voltage, and 50 µA reverse leakage specifications. The primary difference is packaging geometry (Micro SMA versus SOD-323HE), which requires mechanical verification for PCB footprint compatibility. These parts are recommended for new production due to active lifecycle status and higher inventory availability.

MSS1P6-M3/89A (Vishay General Semiconductor) meets core electrical requirements with 60V/1A ratings and active product status. The MicroSMP (DO-219AD) package differs from SOD-323HE, requiring PCB layout modification. Reverse leakage current is elevated at 150 µA compared to 50 µA for the primary part, which may impact low-power standby applications. This part is suitable for designs where package footprint can be accommodated.

SS1060VHEWS_R1_00001 (Panjit International Inc.) maintains 60V/1A electrical ratings with active product status and SOD-323HE package compatibility. Forward voltage is reduced to 600 mV, providing improved efficiency in switching applications. Reverse leakage current is 100 µA, and capacitance is significantly higher at 136 pF, which may affect high-frequency performance. This part is applicable for applications where lower forward voltage drop is beneficial and capacitance variation is acceptable.

Frequently Asked Questions (FAQ)

Q: Can SS16M or SS16MH be used as direct replacements for SS16HE?

A: SS16M and SS16MH are parametric equivalents with identical electrical specifications (60V, 1A, 680 mV Vf, 50 µA leakage). However, the package geometry differs (Micro SMA versus SOD-323HE). Direct PCB substitution requires verification that the Micro SMA footprint is compatible with the existing SOD-323HE land pattern. If footprints are identical, substitution is valid without circuit modification.

Q: What is the difference between NRVBSS16HE and SS16HE?

A: NRVBSS16HE and SS16HE are parametric equivalents with identical electrical performance and SOD-323HE packaging. Both are manufactured by onsemi and both carry "Not For New Designs" status. The primary distinction is part number designation; NRVBSS16HE may represent a variant or alternative ordering code. Electrical compatibility is complete.

Q: Why does MSS1P6-M3/89A have higher reverse leakage current?

A: MSS1P6-M3/89A exhibits 150 µA reverse leakage at 60V compared to 50 µA for SS16HE. This difference is inherent to the Vishay device design and MicroSMP package technology. In applications with strict leakage requirements or extended low-power operation, this elevated leakage may impact system performance. Thermal and power dissipation analysis is required for such applications.

Q: Is SS1060VHEWS_R1_00001 suitable for high-frequency switching?

A: SS1060VHEWS_R1_00001 maintains fast recovery characteristics (≤500 ns) required for switching applications. However, its capacitance is 136 pF at 0V compared to 43 pF for SS16HE. The higher capacitance may increase switching losses and affect frequency response in high-speed circuits. Evaluation of switching performance in the target circuit is necessary before adoption.

Q: Are all substitute parts RoHS3 and REACH compliant?

A: All substitute parts listed (NRVBSS16HE, SS16M, SS16MH, MSS1P6-M3/89A, SS1060VHEWS_R1_00001) are RoHS3 compliant and REACH unaffected. Compliance with environmental regulations is maintained across all alternatives.

Q: Which substitute part has the best availability?

A: SS16MH (Taiwan Semiconductor Corporation) has the highest inventory at 77,047 pieces. SS16M follows with 31,887 pieces, and MSS1P6-M3/89A has 39,300 pieces. NRVBSS16HE has limited availability at 1,440 pieces. For production continuity, SS16MH or SS16M are preferred from an inventory perspective.

Q: Can I use multiple substitute parts interchangeably in the same design?

A: Substitution interchangeability depends on specific circuit requirements. SS16M and SS16MH are fully interchangeable with each other and with SS16HE electrically, but package differences must be resolved. MSS1P6-M3/89A and SS1060VHEWS_R1_00001 introduce variations in leakage current and capacitance that may affect circuit behavior. Each substitute should be evaluated individually for the target application before mixed-part deployment.

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