SS15 R3G Schottky Diode Equivalent & Substitute Parts

Part Overview

The SS15 R3G is a Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-214AC (SMA) surface mount package. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active manufacturers. The SS15 R3G serves in fast recovery rectification applications requiring low forward voltage drop and rapid switching characteristics typical of Schottky technology.

Substiute Parts

SS15 R3G
Taiwan Semiconductor CorporationIn Stock: 1718SS15 R3G Datasheet
SS15 R3G
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B150B-13-F
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Key Parameters

Parameter Value Unit
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 50 V
Package / Case DO-214AC, SMA
Operating Temperature - Junction -55°C to 150°C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the SS15 R3G is determined by strict equivalence in the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Package / Case: DO-214AC, SMA
  • Technology: Schottky
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Direct Equivalents maintain all primary criteria with identical or superior electrical characteristics. These parts are pin-compatible and footprint-compatible with the SS15 R3G.

Functional Alternatives meet the primary electrical requirements (50 V, 1 A, Schottky, fast recovery) but may differ in secondary parameters such as forward voltage drop, reverse leakage current, or operating temperature range. These parts are suitable for applications where the SS15 R3G specifications are met or exceeded.

Higher Current Rated Parts (2 A, 3 A) are included as functional alternatives for applications where the 1 A rating provides insufficient margin or where design flexibility permits higher current capacity.

Lower Voltage Rated Parts (45 V) are not direct substitutes and are included only for reference in applications where voltage derating is acceptable.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Reverse Leakage @ Vr Package Temp Range Status
SS15 R3G Taiwan Semiconductor Corporation 50 V 1 A 750 mV @ 1 A 200 µA @ 50 V DO-214AC, SMA -55°C to 150°C Discontinued
B150-13-F Diodes Incorporated 50 V 1 A 700 mV @ 1 A 500 µA @ 50 V DO-214AC, SMA -65°C to 150°C Active
B150-E3/5AT Vishay General Semiconductor - Diodes Division 50 V 1 A 750 mV @ 1 A 200 µA @ 50 V DO-214AC, SMA -65°C to 150°C Active
B150-E3/61T Vishay General Semiconductor - Diodes Division 50 V 1 A 750 mV @ 1 A 200 µA @ 50 V DO-214AC, SMA -65°C to 150°C Active
B150Q-13-F Diodes Incorporated 50 V 1 A 700 mV @ 1 A 500 µA @ 40 V DO-214AC, SMA -65°C to 150°C Active
B150B-13-F Diodes Incorporated 50 V 1 A 700 mV @ 1 A 500 µA @ 50 V DO-214AA, SMB -65°C to 150°C Active
B250AQ-13-F Diodes Incorporated 50 V 2 A 700 mV @ 2 A 500 µA @ 50 V DO-214AC, SMA -65°C to 150°C Active
B350A-E3/5AT Vishay General Semiconductor - Diodes Division 50 V 3 A 720 mV @ 3 A 200 µA @ 50 V DO-214AC, SMA -55°C to 150°C Active
B350A-E3/61T Vishay General Semiconductor - Diodes Division 50 V 3 A 720 mV @ 3 A 200 µA @ 50 V DO-214AC, SMA -55°C to 150°C Active
BYS10-45-E3/TR Vishay General Semiconductor - Diodes Division 45 V 1.5 A 500 mV @ 1 A 500 µA @ 45 V DO-214AC, SMA -65°C to 150°C Active
BYS10-45-E3/TR3 Vishay General Semiconductor - Diodes Division 45 V 1.5 A 500 mV @ 1 A 500 µA @ 45 V DO-214AC, SMA -65°C to 150°C Active

Engineering Selection Recommendations

Direct Electrical Equivalents (50 V, 1 A, DO-214AC SMA):

The B150-E3/5AT and B150-E3/61T from Vishay General Semiconductor - Diodes Division are direct substitutes for the SS15 R3G. Both parts match the forward voltage specification (750 mV @ 1 A) and reverse leakage current (200 µA @ 50 V) of the original part. Both are active products with ROHS3 compliance and MSL 1 rating. The B150-E3/61T offers higher inventory availability (10,972 pcs) compared to B150-E3/5AT (804 pcs). Operating temperature range extends to -65°C, providing superior low-temperature performance relative to the SS15 R3G (-55°C minimum).

Functional Equivalents with Lower Forward Voltage (50 V, 1 A, DO-214AC SMA):

The B150-13-F and B150Q-13-F from Diodes Incorporated meet the 50 V, 1 A, DO-214AC SMA requirements with improved forward voltage characteristics (700 mV @ 1 A versus 750 mV). The B150Q-13-F carries AEC-Q101 automotive qualification and is suitable for applications requiring automotive-grade components. B150-13-F offers the highest inventory availability (25,400 pcs). Both parts exhibit higher reverse leakage current (500 µA @ 50 V) compared to the SS15 R3G specification.

Higher Current Capacity Alternative (50 V, 2 A, DO-214AC SMA):

The B250AQ-13-F provides 2 A current capacity in the same DO-214AC SMA package with 50 V rating. This part is suitable for applications where 1 A capacity is marginal or where design flexibility permits higher current handling. It carries AEC-Q101 automotive qualification.

Higher Current Capacity Alternative (50 V, 3 A, DO-214AC SMA):

The B350A-E3/5AT and B350A-E3/61T provide 3 A current capacity in the DO-214AC SMA package. These parts are suitable for applications requiring significant current margin above the 1 A specification. Both maintain the 200 µA reverse leakage characteristic of the original part. B350A-E3/61T offers higher inventory (4,664 pcs).

Package Variant (50 V, 1 A, DO-214AA SMB):

The B150B-13-F is a 50 V, 1 A Schottky diode in the DO-214AA SMB package. This part is suitable only for applications where SMB package footprint is acceptable and represents a package upgrade rather than a direct substitute.

Lower Voltage Alternative (45 V, 1.5 A, DO-214AC SMA):

The BYS10-45-E3/TR and BYS10-45-E3/TR3 are 45 V rated Schottky diodes with 1.5 A capacity. These parts are not direct substitutes due to reduced voltage rating and are suitable only for applications where 45 V reverse voltage is sufficient and where the lower forward voltage (500 mV @ 1 A) provides design advantage.

Frequently Asked Questions (FAQ)

Q: Can B150-13-F directly replace SS15 R3G in all applications?

A: B150-13-F meets the electrical specifications (50 V, 1 A, Schottky, fast recovery) and is footprint-compatible in the DO-214AC SMA package. The lower forward voltage (700 mV versus 750 mV) is a performance improvement. Higher reverse leakage current (500 µA versus 200 µA) must be evaluated in applications sensitive to leakage. Extended operating temperature range (-65°C to 150°C) provides additional margin.

Q: What is the difference between B150-E3/5AT and B150-E3/61T?

A: Both parts are electrically identical 50 V, 1 A Schottky diodes in DO-214AC SMA packages from Vishay with matching forward voltage (750 mV @ 1 A) and reverse leakage (200 µA @ 50 V). The designation suffix indicates different tape and reel configurations. B150-E3/61T has higher inventory availability. Selection between these parts is based on packaging and supply requirements rather than electrical performance.

Q: Why would I select B250AQ-13-F or B350A-E3/61T over a 1 A rated part?

A: Higher current rated parts provide design margin in applications where load current approaches the 1 A limit or where thermal considerations benefit from lower current density. These parts maintain the 50 V rating and DO-214AC SMA package compatibility. Selection depends on application current requirements and thermal design constraints.

Q: Is B150Q-13-F suitable for automotive applications?

A: B150Q-13-F carries AEC-Q101 automotive qualification, making it suitable for automotive applications. It meets the 50 V, 1 A electrical specifications with DO-214AC SMA package compatibility. This part is recommended for designs requiring automotive-grade component certification.

Q: Can BYS10-45-E3/TR substitute for SS15 R3G?

A: BYS10-45-E3/TR is not a direct substitute due to reduced reverse voltage rating (45 V versus 50 V). This part is suitable only for applications where 45 V reverse voltage is sufficient. The lower forward voltage (500 mV @ 1 A) and higher current capacity (1.5 A) may provide design advantages in voltage-derating scenarios.

Q: What is the significance of the DO-214AC SMA package specification?

A: DO-214AC SMA is the surface mount package designation for the SS15 R3G. All direct electrical equivalents must use this package for footprint compatibility. B150B-13-F uses the DO-214AA SMB package variant, which requires different PCB footprint and is not a direct mechanical substitute.

Q: How do I evaluate reverse leakage current differences between substitute parts?

A: Reverse leakage current affects power dissipation and circuit performance in high-impedance applications. The SS15 R3G specifies 200 µA @ 50 V. Substitute parts with 500 µA @ 50 V exhibit 2.5 times higher leakage. Applications sensitive to leakage (precision rectification, low-power circuits) should prioritize parts matching the original specification. General rectification applications typically tolerate higher leakage.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance profile of the SS15 R3G.

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