SS115LWHRVG Equivalent & Substitute Parts

Part Overview

The SS115LWHRVG is an active Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 150 V DC reverse voltage and 1 A average rectified current in a surface mount SOD-123W package. This component is designed for fast recovery applications with switching speeds ≤ 500 ns at currents > 200 mA. The part is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1) and is suitable for general-purpose rectification circuits requiring low forward voltage drop characteristics. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and design continuity when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	150	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	mV
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	ns
Current - Reverse Leakage @ Vr	10	µA @ 150 V
Operating Temperature - Junction	-55 to 150	°C
Package / Case	SOD-123W	—
Mounting Type	Surface Mount	—
Technology	Schottky	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the SS115LWHRVG is determined by strict equivalence across the following critical parameters: reverse voltage rating (150 V), average rectified current (1 A), forward voltage drop (950 mV @ 1 A), recovery speed (≤ 500 ns), reverse leakage current (10 µA @ 150 V), operating temperature range (-55°C to 150°C), surface mount mounting type, and ROHS3 compliance.

Parametric Equivalent: The SS115LW from Taiwan Semiconductor Corporation matches all electrical specifications and package requirements of the main part, differing only in device marking and internal construction while maintaining identical performance parameters.

Similar Manufacturer Part: The SS10150HE-AU_R1_000A1 from Panjit International Inc. provides functional equivalence at the same voltage and current ratings with comparable recovery speed and temperature range. This part operates in a SOD-123HE package variant and exhibits a lower forward voltage (850 mV @ 1 A) and higher reverse leakage (30 µA @ 150 V). The SS10150HE-AU_R1_000A1 carries AEC-Q101 automotive qualification and is suitable for applications where automotive-grade components are required.

Parameter Comparison

Parameter	SS115LWHRVG (Main)	SS115LW (Parametric Equivalent)	SS10150HE-AU_R1_000A1 (Similar)
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Panjit International Inc.
Voltage - DC Reverse (Vr) (Max)	150 V	150 V	150 V
Current - Average Rectified (Io)	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 1 A	950 mV @ 1 A	850 mV @ 1 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA	Fast Recovery ≤ 500 ns, > 200 mA	Fast Recovery ≤ 500 ns, > 200 mA
Current - Reverse Leakage @ Vr	10 µA @ 150 V	10 µA @ 150 V	30 µA @ 150 V
Operating Temperature - Junction	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package / Case	SOD-123W	SOD-123W	SOD-123H
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Technology	Schottky	Schottky	Schottky
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active

Engineering Selection Recommendations

SS115LW is the direct parametric equivalent and primary substitute for the SS115LWHRVG. Both parts are manufactured by Taiwan Semiconductor Corporation, share identical electrical specifications, and are packaged in SOD-123W. Selection of SS115LW is appropriate for direct replacement in existing designs without circuit modification. Both parts maintain ROHS3 compliance and unlimited moisture sensitivity rating.

SS10150HE-AU_R1_000A1 serves as a functional alternative when automotive-grade qualification is required. This part meets the same voltage, current, and temperature specifications while offering improved forward voltage characteristics (850 mV versus 950 mV). The higher reverse leakage current (30 µA versus 10 µA) and SOD-123HE package variant require evaluation for specific circuit requirements. AEC-Q101 qualification makes this part suitable for automotive applications where such certification is mandatory. PCB layout modifications may be necessary due to package geometry differences between SOD-123W and SOD-123HE.

Selection between these substitutes depends on application requirements: use SS115LW for direct replacement; use SS10150HE-AU_R1_000A1 when automotive qualification is specified or when lower forward voltage drop provides circuit benefits.

Frequently Asked Questions (FAQ)

Q: Can SS115LW be used as a direct replacement for SS115LWHRVG?

A: Yes. SS115LW is a parametric equivalent with identical electrical specifications, package type (SOD-123W), and compliance certifications. No circuit modifications are required.

Q: What are the differences between SS115LWHRVG and SS10150HE-AU_R1_000A1?

A: Both parts share the same 150 V reverse voltage, 1 A current rating, and fast recovery speed. Key differences are: SS10150HE-AU_R1_000A1 has lower forward voltage (850 mV versus 950 mV), higher reverse leakage (30 µA versus 10 µA), uses SOD-123HE package instead of SOD-123W, and carries AEC-Q101 automotive qualification.

Q: Is the SOD-123HE package compatible with SOD-123W footprints?

A: SOD-123HE and SOD-123W are distinct package variants with different physical dimensions. PCB layout modifications are required when substituting between these packages. Verify footprint compatibility with design documentation before implementation.

Q: Which substitute part should be selected for automotive applications?

A: SS10150HE-AU_R1_000A1 is qualified to AEC-Q101 automotive standards and is the appropriate selection when automotive-grade components are specified. SS115LW and SS115LWHRVG do not carry automotive qualification.

Q: Are all three parts ROHS3 compliant?

A: Yes. SS115LWHRVG, SS115LW, and SS10150HE-AU_R1_000A1 are all ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Q: What is the impact of the forward voltage difference between SS115LWHRVG and SS10150HE-AU_R1_000A1?

A: SS10150HE-AU_R1_000A1 exhibits 100 mV lower forward voltage drop (850 mV versus 950 mV at 1 A). This results in reduced power dissipation and heat generation in the diode. Circuit performance impact depends on application requirements; evaluate thermal and efficiency implications for your specific design.

Q: Can reverse leakage current differences affect circuit operation?

A: The reverse leakage difference (10 µA for SS115LWHRVG versus 30 µA for SS10150HE-AU_R1_000A1) is generally insignificant in most rectification applications. Evaluate leakage impact only in high-impedance circuits or precision analog applications where leakage current contributes measurably to circuit performance.

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