SS110L M2G Equivalent & Substitute Parts

Part Overview

The SS110L M2G is a Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a surface mount Sub SMA package (DO-219AB). This component is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications allow for compatible alternatives with enhanced performance characteristics or automotive-grade qualifications.

Substiute Parts

SS110L M2G
Taiwan Semiconductor CorporationIn Stock: 841SS110L M2G Datasheet
SS110L M2G
Current Part
SS110L
Taiwan Semiconductor CorporationIn Stock: 15466SS110L Datasheet
SS110L
Parametric Equivalent
SS1FH10-M3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 25151SS1FH10-M3/H Datasheet
SS1FH10-M3/H
Similar
SS1FH10HM3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 130271SS1FH10HM3/H Datasheet
SS1FH10HM3/H
Similar
SS2FH10-M3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 14615SS2FH10-M3/H Datasheet
SS2FH10-M3/H
Similar
SS2FH10HM3/H
Vishay General Semiconductor - Diodes DivisionIn Stock: 21293SS2FH10HM3/H Datasheet
SS2FH10HM3/H
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 50 µA @ 100 V
Package / Case DO-219AB
Mounting Type Surface Mount
Operating Temperature - Junction -55 to 150 °C
Technology Schottky
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the SS110L M2G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V (exact match required)
  • Current - Average Rectified (Io): 1 A (exact match required for direct substitution)
  • Package / Case: DO-219AB (exact match required)
  • Mounting Type: Surface Mount (exact match required)
  • Technology: Schottky (exact match required)

Secondary Compatibility Factors:

  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A (within specification tolerance)
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (exact match required)
  • Operating Temperature - Junction: -55°C to 150°C minimum (higher maximum temperature acceptable)
  • RoHS Status: ROHS3 Compliant (compliance requirement maintained)

Parts meeting all primary criteria are classified as parametric equivalents. Parts with identical electrical ratings but higher current capacity (2 A) are classified as similar alternatives suitable for designs with current margin requirements. Parts with automotive-grade qualifications (AEC-Q101) are suitable for applications requiring automotive reliability standards.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Reverse Leakage @ Vr [µA] Package Tj (°C) Product Status Automotive Grade
SS110L M2G Taiwan Semiconductor Corporation 100 1 800 @ 1A 50 @ 100V DO-219AB -55 to 150 Active
SS110L Taiwan Semiconductor Corporation 100 1 800 @ 1A 50 @ 100V DO-219AB -55 to 150 Not For New Designs
SS1FH10-M3/H Vishay General Semiconductor - Diodes Division 100 1 800 @ 1A 5 @ 100V DO-219AB -55 to 175 Active
SS1FH10HM3/H Vishay General Semiconductor - Diodes Division 100 1 800 @ 1A 5 @ 100V DO-219AB -55 to 175 Active AEC-Q101
SS2FH10-M3/H Vishay General Semiconductor - Diodes Division 100 2 860 @ 2A 5 @ 10V DO-219AB -55 to 175 Active
SS2FH10HM3/H Vishay General Semiconductor - Diodes Division 100 2 860 @ 2A 5 @ 100V DO-219AB -55 to 175 Active AEC-Q101

Engineering Selection Recommendations

Direct Parametric Equivalents (Identical Electrical and Mechanical Specifications):

SS1FH10-M3/H and SS1FH10HM3/H from Vishay General Semiconductor - Diodes Division are parametric equivalents to the SS110L M2G. Both parts maintain 100 V reverse voltage rating, 1 A average rectified current, and DO-219AB package configuration. These parts are Active product status and ROHS3 compliant. The SS1FH10HM3/H variant includes AEC-Q101 automotive qualification and extended operating temperature range to 175°C, making it suitable for automotive and high-reliability applications.

Higher Current Capacity Alternatives:

SS2FH10-M3/H and SS2FH10HM3/H are rated for 2 A average rectified current while maintaining the 100 V reverse voltage rating and DO-219AB package. These parts are suitable for designs where current margin is required or where load conditions exceed 1 A. Both are Active product status and ROHS3 compliant. The SS2FH10HM3/H variant includes AEC-Q101 automotive qualification.

Legacy Part Status:

SS110L (Tape & Reel packaging) is a parametric equivalent but carries "Not For New Designs" product status. This part should not be selected for new circuit designs.

Selection Basis:

Part selection should be based on: (1) Active product status requirement for new designs, (2) ROHS3 compliance for regulatory adherence, (3) current capacity requirement (1 A or 2 A), (4) automotive qualification requirement (AEC-Q101 if applicable), and (5) operating temperature range requirement (150°C or 175°C maximum junction temperature).

Frequently Asked Questions (FAQ)

Q: Can SS1FH10-M3/H be used as a direct replacement for SS110L M2G?

A: Yes. SS1FH10-M3/H meets all primary substitution criteria: 100 V reverse voltage, 1 A average rectified current, DO-219AB package, surface mount configuration, and Schottky technology. Both parts are Active product status and ROHS3 compliant. The Vishay part offers lower reverse leakage current (5 µA versus 50 µA) and extended operating temperature range to 175°C.

Q: What is the difference between SS1FH10HM3/H and SS1FH10-M3/H?

A: Both parts are electrically and mechanically identical with 100 V reverse voltage and 1 A current rating. The primary difference is that SS1FH10HM3/H includes AEC-Q101 automotive qualification and is available in Tape & Reel packaging, while SS1FH10-M3/H is available in Cut Tape & Digi-Reel packaging. Selection depends on packaging format requirements for manufacturing processes.

Q: Can SS2FH10-M3/H or SS2FH10HM3/H be used in place of SS110L M2G?

A: These parts are suitable alternatives when design specifications allow for higher current capacity. Both maintain the 100 V reverse voltage rating and DO-219AB package. The 2 A current rating provides additional margin above the 1 A requirement. Forward voltage is slightly higher (860 mV @ 2A versus 800 mV @ 1A). These parts are Active product status and ROHS3 compliant.

Q: What packaging formats are available for equivalent parts?

A: Equivalent parts are available in multiple packaging formats: Tape & Reel (TR), Cut Tape (CT) & Digi-Reel®, and bulk packaging. Packaging selection depends on manufacturing process requirements and volume. Tape & Reel format is standard for automated assembly processes.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, meeting regulatory requirements for electronic component use in regulated markets.

Q: What is the significance of AEC-Q101 qualification?

A: AEC-Q101 is an automotive electronics qualification standard. Parts with this qualification (SS1FH10HM3/H and SS2FH10HM3/H) have undergone additional reliability testing and are suitable for automotive applications and high-reliability industrial applications requiring enhanced quality assurance.

Q: Why does SS110L show "Not For New Designs" status?

A: Parts designated "Not For New Designs" are typically being phased out or have been superseded by improved alternatives. New circuit designs should select from parts with Active product status, such as SS1FH10-M3/H, SS1FH10HM3/H, SS2FH10-M3/H, or SS2FH10HM3/H.

Q: What is the difference in reverse leakage current between parts?

A: SS110L M2G specifies 50 µA reverse leakage at 100 V, while Vishay equivalents specify 5 µA. Lower reverse leakage current reduces power dissipation and improves circuit efficiency, particularly in low-current applications or high-impedance circuits.

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