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SS110LHRVG Equivalent & Substitute Parts
Part Overview
The SS110LHRVG is a Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 100 V DC reverse voltage and 1 A average rectified current in a Sub SMA surface mount package. This component is classified as Active product status and carries automotive-grade qualification (AEC-Q101). The part is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are identified based on matching electrical performance parameters, mechanical compatibility, and package specifications. Alternative components may be required due to inventory availability, supply chain considerations, or design flexibility within specified electrical operating ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 1 A | mV |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | ns |
| Current - Reverse Leakage @ Vr | 50 | µA @ 100 V |
| Technology | Schottky | — |
| Package / Case | DO-219AB | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature - Junction | -55°C ~ 150°C | °C |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the SS110LHRVG are classified into two categories based on electrical and mechanical compatibility:
Parametric Equivalent (Direct Substitution): Parts that match all critical electrical parameters: 100 V reverse voltage rating, 1 A average rectified current, 800 mV forward voltage drop at 1 A, fast recovery speed characteristics, and DO-219AB package configuration. These parts maintain identical functional performance within the specified operating range.
Similar Manufacturer Parts (Functional Alternatives): Parts that share the same package type (DO-219AB) and core Schottky technology but may differ in specific electrical characteristics such as reverse leakage current, forward voltage specifications, or current rating. These alternatives are suitable when the application permits operation within their specified parameter ranges.
Key Parameters Determining Substitution:
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1 A or higher
- Package / Case: DO-219AB (Sub SMA)
- Technology: Schottky
- Mounting Type: Surface Mount
- Operating Temperature Range: -55°C minimum to 150°C minimum
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ If [mV] | Ir @ Vr [µA] | Package | Product Status | Grade | Temp Range [°C] |
|---|---|---|---|---|---|---|---|---|---|
| SS110LHRVG | Taiwan Semiconductor Corporation | 100 | 1 | 800 @ 1 A | 50 @ 100 V | DO-219AB | Active | Automotive | -55 ~ 150 |
| SS110L | Taiwan Semiconductor Corporation | 100 | 1 | 800 @ 1 A | 50 @ 100 V | DO-219AB | Not For New Designs | — | -55 ~ 150 |
| SS1FH10-M3/H | Vishay General Semiconductor - Diodes Division | 100 | 1 | 800 @ 1 A | 5 @ 100 V | DO-219AB | Active | — | -55 ~ 175 |
| SS1FH10HM3/H | Vishay General Semiconductor - Diodes Division | 100 | 1 | 800 @ 1 A | 5 @ 100 V | DO-219AB | Active | Automotive | -55 ~ 175 |
| SS2FH10-M3/H | Vishay General Semiconductor - Diodes Division | 100 | 2 | 860 @ 2 A | 5 @ 10 V | DO-219AB | Active | — | -55 ~ 175 |
| SS2FH10HM3/H | Vishay General Semiconductor - Diodes Division | 100 | 2 | 860 @ 2 A | 5 @ 100 V | DO-219AB | Active | Automotive | -55 ~ 175 |
Engineering Selection Recommendations
Direct Substitution (Parametric Equivalent):
SS110L is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical electrical specifications. However, this part carries "Not For New Designs" status, limiting its application to legacy system support or existing inventory utilization only.
Active Alternatives with Automotive Qualification:
SS1FH10HM3/H (Vishay General Semiconductor - Diodes Division) is an active product with AEC-Q101 automotive qualification matching the SS110LHRVG. This part maintains 100 V reverse voltage and 1 A current ratings with identical forward voltage characteristics. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. Reverse leakage current is specified at 5 µA @ 100 V, representing lower leakage than the main part.
Active Alternatives without Automotive Grade Designation:
SS1FH10-M3/H (Vishay General Semiconductor - Diodes Division) is an active product with matching electrical parameters to SS1FH10HM3/H but without automotive-grade certification. This part is suitable for non-automotive applications requiring equivalent performance.
Higher Current Rating Alternatives:
SS2FH10HM3/H and SS2FH10-M3/H are rated for 2 A average rectified current with 100 V reverse voltage in the same DO-219AB package. These parts provide current margin for applications where 1 A rating is marginal. SS2FH10HM3/H carries automotive qualification; SS2FH10-M3/H does not. Forward voltage increases to 860 mV @ 2 A due to higher current specification.
Selection Criteria:
For automotive applications requiring AEC-Q101 compliance, select SS1FH10HM3/H or SS2FH10HM3/H. For non-automotive applications, SS1FH10-M3/H or SS2FH10-M3/H are suitable. All recommended alternatives maintain RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).
Frequently Asked Questions (FAQ)
Q: Can SS110L be used as a direct replacement for SS110LHRVG?
A: SS110L is parametrically equivalent with identical electrical specifications (100 V, 1 A, 800 mV forward voltage). However, SS110L carries "Not For New Designs" status. Use only for legacy system maintenance or existing inventory applications. For new designs, select active alternatives such as SS1FH10HM3/H.
Q: What is the difference between SS1FH10-M3/H and SS1FH10HM3/H?
A: Both parts are manufactured by Vishay General Semiconductor - Diodes Division with identical electrical specifications (100 V, 1 A, 800 mV forward voltage). SS1FH10HM3/H carries automotive-grade qualification (AEC-Q101) and is suitable for automotive applications. SS1FH10-M3/H lacks automotive certification and is intended for general industrial applications.
Q: Why do SS2FH10-M3/H and SS2FH10HM3/H have higher forward voltage (860 mV @ 2 A) compared to the main part (800 mV @ 1 A)?
A: Forward voltage is current-dependent. The SS2FH10 series is rated for 2 A average rectified current, and forward voltage is specified at this higher current level. At 1 A operation, forward voltage would be lower than the 2 A specification. These parts are suitable for applications requiring higher current capacity within the same 100 V package.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts (SS110L, SS1FH10-M3/H, SS1FH10HM3/H, SS2FH10-M3/H, SS2FH10HM3/H) are RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).
Q: Can I use a 2 A rated diode (SS2FH10 series) in place of a 1 A rated diode (SS110LHRVG)?
A: Yes. The SS2FH10 series (both SS2FH10-M3/H and SS2FH10HM3/H) maintains the same 100 V reverse voltage rating and DO-219AB package. The higher current rating (2 A) provides design margin for applications where 1 A is marginal. Forward voltage increases to 860 mV @ 2 A due to the higher current specification, but this remains within acceptable limits for most rectifier applications.
Q: What is the operating temperature difference between SS110LHRVG and Vishay alternatives?
A: SS110LHRVG operates from -55°C to 150°C junction temperature. Vishay alternatives (SS1FH10-M3/H, SS1FH10HM3/H, SS2FH10-M3/H, SS2FH10HM3/H) operate from -55°C to 175°C. The extended upper temperature limit provides additional thermal margin in high-temperature applications.
Q: Which substitute part should I select for a new automotive design?
A: For new automotive designs, select SS1FH10HM3/H or SS2FH10HM3/H. Both parts carry AEC-Q101 automotive qualification, are active products, and maintain the required electrical specifications. SS1FH10HM3/H matches the 1 A current rating of the original part; SS2FH10HM3/H provides 2 A capacity for applications requiring higher current margin.
Q: Is reverse leakage current a critical parameter for substitution?
A: Reverse leakage current is application-dependent. SS110LHRVG specifies 50 µA @ 100 V, while Vishay alternatives specify 5 µA @ 100 V. Lower leakage is generally beneficial for precision rectification and low-power applications. Verify that the substitute part's leakage specification meets circuit requirements before selection.
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