SR20100 Schottky Diode Array Equivalent & Substitute Parts

Part Overview

The SR20100 is a Schottky diode array in a 1 Pair Common Cathode configuration rated for 100 V DC reverse voltage and 20 A average rectified current per diode. Manufactured by Taiwan Semiconductor Corporation, this component is packaged in a TO-220-3 through-hole format and is classified as discontinued at DiGi Electronics. The fast recovery characteristic (≤500 ns) and low forward voltage drop make this rectifier suitable for high-frequency switching applications requiring efficient power conversion. Due to its discontinued status, equivalent and substitute parts from active manufacturers are necessary for ongoing design support and procurement.

Substiute Parts

SR20100
Taiwan Semiconductor CorporationIn Stock: 2317SR20100 Datasheet
SR20100
Current Part
SR20100HC0G
Taiwan Semiconductor CorporationIn Stock: 966SR20100HC0G Datasheet
SR20100HC0G
Parametric Equivalent
MBR10100CT-BP
Micro Commercial CoIn Stock: 5907MBR10100CT-BP Datasheet
MBR10100CT-BP
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MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 3178MBR10100CT-E3/4W Datasheet
MBR10100CT-E3/4W
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MBR10100CT-G1
Diodes IncorporatedIn Stock: 1219MBR10100CT-G1 Datasheet
MBR10100CT-G1
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MBR10H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 3669MBR10H100CT-E3/45 Datasheet
MBR10H100CT-E3/45
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MBR20100CT-BP
Micro Commercial CoIn Stock: 5084MBR20100CT-BP Datasheet
MBR20100CT-BP
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MBR20100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8817MBR20100CT-E3/4W Datasheet
MBR20100CT-E3/4W
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MBR20100CT-G1
Diodes IncorporatedIn Stock: 1781MBR20100CT-G1 Datasheet
MBR20100CT-G1
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MBR20100CT-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 2244MBR20100CT-M3/4W Datasheet
MBR20100CT-M3/4W
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MBR20H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1625MBR20H100CT-E3/45 Datasheet
MBR20H100CT-E3/45
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MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1260MBR20H100CTG-E3/45 Datasheet
MBR20H100CTG-E3/45
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MBR30100CT-BP
Micro Commercial CoIn Stock: 880MBR30100CT-BP Datasheet
MBR30100CT-BP
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MBR30100CT-G1
Diodes IncorporatedIn Stock: 1064MBR30100CT-G1 Datasheet
MBR30100CT-G1
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MBR30H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1669MBR30H100CT-E3/45 Datasheet
MBR30H100CT-E3/45
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MBRB41H100CT-1G
Fairchild SemiconductorIn Stock: 2857MBRB41H100CT-1G Datasheet
MBRB41H100CT-1G
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NTSV20100CTG
onsemiIn Stock: 1487NTSV20100CTG Datasheet
NTSV20100CTG
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SDT20100CT
Diodes IncorporatedIn Stock: 1338SDT20100CT Datasheet
SDT20100CT
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V20100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8760V20100C-E3/4W Datasheet
V20100C-E3/4W
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V20100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 20261V20100C-M3/4W Datasheet
V20100C-M3/4W
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V20100R-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1326V20100R-E3/4W Datasheet
V20100R-E3/4W
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V20M100M-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 112127V20M100M-E3/4W Datasheet
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V30100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 6167V30100C-E3/4W Datasheet
V30100C-E3/4W
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V30100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 4971V30100C-M3/4W Datasheet
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V40100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 90547V40100C-E3/4W Datasheet
V40100C-E3/4W
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V40100G-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1184V40100G-E3/4W Datasheet
V40100G-E3/4W
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V40100G-M3/4W
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V40100G-M3/4W
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V40100K-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1004V40100K-E3/4W Datasheet
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V60100C-E3/4W
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V60100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 10296V60100C-M3/4W Datasheet
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VS-43CTQ100HN3
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Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 20 A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 A
Speed Fast Recovery ≤500 ns, >200 mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the SR20100 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Diode Configuration: 1 Pair Common Cathode (mandatory)
  • Technology: Schottky (mandatory)
  • Voltage - DC Reverse (Vr) (Max): 100 V (mandatory)
  • Mounting Type: Through Hole (mandatory)
  • Package / Case: TO-220-3 (mandatory)

Secondary Compatibility Parameters:

  • Current - Average Rectified (Io) (per Diode): Equal or greater than 20 A for direct equivalence; lower ratings represent reduced-current alternatives
  • Voltage - Forward (Vf) (Max) @ If: Lower values indicate improved efficiency
  • Current - Reverse Leakage @ Vr: Lower values indicate reduced leakage
  • Operating Temperature - Junction: Extended ranges provide additional thermal margin
  • RoHS Status: ROHS3 Compliant (maintained across all substitutes)

Substitute parts are grouped into two categories: Parametric Equivalents (matching all primary and secondary parameters) and Similar Alternatives (matching primary criteria with variations in current rating or thermal characteristics).

Parameter Comparison

Manufacturer Part Number Manufacturer Io (per Diode) Vf (Max) @ If Ir @ Vr Tj (Operating) Product Status Grade / Qualification
SR20100 Taiwan Semiconductor Corporation 20 A 900 mV @ 10 A 100 µA @ 100 V -55°C ~ 150°C Discontinued
SR20100HC0G Taiwan Semiconductor Corporation 20 A 900 mV @ 10 A 100 µA @ 100 V -55°C ~ 150°C Active Automotive / AEC-Q101
MBR20100CT-BP Micro Commercial Co 10 A 950 mV @ 20 A 150 µA @ 100 V -55°C ~ 150°C Active
MBR20100CT-E3/4W Vishay General Semiconductor - Diodes Division 10 A 800 mV @ 10 A 100 µA @ 100 V -65°C ~ 150°C Active TMBS® Series
MBR20100CT-G1 Diodes Incorporated 10 A 840 mV @ 10 A 50 µA @ 100 V -55°C ~ 175°C Active Automotive / AEC-Q101
MBR20100CT-M3/4W Vishay General Semiconductor - Diodes Division 10 A 800 mV @ 10 A 100 µA @ 100 V -65°C ~ 150°C Active TMBS® Series
MBR20H100CT-E3/45 Vishay General Semiconductor - Diodes Division 10 A 770 mV @ 10 A 4.5 µA @ 100 V -65°C ~ 150°C Active
MBR10100CT-BP Micro Commercial Co 10 A 850 mV @ 5 A 200 µA @ 100 V -55°C ~ 150°C Active
MBR10100CT-E3/4W Vishay General Semiconductor - Diodes Division 5 A 850 mV @ 5 A 100 µA @ 100 V -65°C ~ 150°C Active TMBS® Series
MBR10100CT-G1 Diodes Incorporated 5 A 840 mV @ 5 A 50 µA @ 100 V -55°C ~ 150°C Active Automotive / AEC-Q101
MBR10H100CT-E3/45 Vishay General Semiconductor - Diodes Division 5 A 760 mV @ 5 A 3.5 µA @ 100 V -65°C ~ 175°C Active

Engineering Selection Recommendations

Direct Parametric Equivalent:

SR20100HC0G is the primary equivalent for SR20100. This part maintains identical electrical specifications (20 A per diode, 100 V reverse voltage, 900 mV forward voltage at 10 A) and mechanical compatibility (TO-220-3 package, through-hole mounting). SR20100HC0G carries Active product status and includes Automotive grade qualification with AEC-Q101 certification, providing enhanced reliability assurance for critical applications.

Current-Reduced Alternatives (10 A per Diode):

MBR20100CT-E3/4W, MBR20100CT-M3/4W, MBR20100CT-G1, and MBR20100CT-BP are suitable for applications where the 20 A current requirement can be reduced to 10 A per diode. These parts maintain the 100 V reverse voltage rating and TO-220-3 package format. MBR20100CT-E3/4W and MBR20100CT-M3/4W offer improved forward voltage characteristics (800 mV @ 10 A) and extended lower operating temperature (-65°C). MBR20100CT-G1 provides Automotive grade with AEC-Q101 qualification and extended upper operating temperature (175°C). MBR20100CT-BP is available from Micro Commercial Co with standard temperature range.

Current-Reduced Alternatives (5 A per Diode):

MBR10100CT-E3/4W, MBR10100CT-G1, and MBR10H100CT-E3/45 are applicable for applications requiring only 5 A per diode. MBR10H100CT-E3/45 exhibits superior leakage characteristics (3.5 µA @ 100 V) and extended upper operating temperature (175°C). MBR10100CT-G1 includes Automotive grade with AEC-Q101 qualification.

All substitute parts maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and through-hole TO-220-3 packaging.

Frequently Asked Questions (FAQ)

Q: Can SR20100HC0G be used as a direct replacement for SR20100?

A: Yes. SR20100HC0G is a parametric equivalent with identical electrical specifications (20 A per diode, 100 V reverse voltage, 900 mV forward voltage at 10 A) and mechanical compatibility (TO-220-3 through-hole package). SR20100HC0G is Active status with Automotive grade and AEC-Q101 qualification.

Q: What is the difference between 20 A and 10 A rated alternatives?

A: The current rating specifies the maximum average rectified current per diode. A 20 A part (SR20100, SR20100HC0G) can handle twice the current of a 10 A part (MBR20100CT series). Selection depends on circuit current requirements. Using a 10 A part in a 20 A application will result in component overstress and failure.

Q: Are MBR10100CT and MBR20100CT parts interchangeable?

A: No. MBR10100CT parts are rated for 10 A per diode, while MBR20100CT parts are rated for 20 A per diode. These are different product lines with different current capabilities. Selection must match the application current requirement.

Q: What does "1 Pair Common Cathode" configuration mean?

A: This describes the internal diode arrangement within the package. A 1 Pair Common Cathode configuration contains two diodes sharing a common cathode terminal. This configuration is essential for specific circuit topologies such as bridge rectifiers. All listed substitutes maintain this configuration.

Q: Why do some parts have lower forward voltage (Vf) specifications?

A: Forward voltage varies based on diode design and manufacturing process. Lower Vf values (e.g., 760 mV vs. 900 mV) indicate reduced power dissipation at the same current level, resulting in improved efficiency and lower thermal generation. Parts with lower Vf are preferable in power-sensitive applications.

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current represents unwanted current flow when the diode is reverse-biased. Lower leakage values indicate better diode quality and reduced power loss in the reverse-biased state. Parts with leakage specifications below 10 µA (such as MBR10H100CT-E3/45 at 3.5 µA) are preferred for precision applications.

Q: Do all substitutes have the same operating temperature range?

A: No. The SR20100 operates from -55°C to 150°C. Some alternatives extend the lower limit to -65°C (MBR20100CT-E3/4W, MBR20100CT-M3/4W, MBR10100CT-E3/4W, MBR10H100CT-E3/45) or upper limit to 175°C (MBR20100CT-G1, MBR10100CT-G1, MBR10H100CT-E3/45). Extended ranges provide additional thermal margin for demanding environments.

Q: What is AEC-Q101 qualification?

A: AEC-Q101 is an automotive industry standard qualification for discrete semiconductors. Parts carrying this qualification (SR20100HC0G, MBR20100CT-G1, MBR10100CT-G1) have undergone rigorous testing for reliability, temperature cycling, and performance consistency. This qualification is required for automotive and mission-critical applications.

Q: Are all substitutes ROHS3 compliant?

A: Yes. All listed parts maintain ROHS3 compliance, indicating compliance with Restriction of Hazardous Substances regulations. All parts also carry MSL 1 (Unlimited) moisture sensitivity rating, requiring no special moisture control during storage and handling.

Q: What is the TMBS® series designation?

A: TMBS® is a Vishay trademark for their Trench MOS Barrier Schottky diode technology. Parts designated as TMBS® (MBR20100CT-E3/4W, MBR20100CT-M3/4W, MBR10100CT-E3/4W) incorporate this advanced manufacturing process, typically resulting in improved electrical characteristics such as lower forward voltage and leakage current.

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