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SR104 B0G Schottky Diode Equivalent & Substitute Parts
Part Overview
The SR104 B0G is an active-status Schottky rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 40 V DC reverse voltage and 1 A average rectified current in a DO-204AL (DO-41) through-hole axial package. This component is used in applications requiring fast recovery rectification with low forward voltage drop characteristics. Equivalent and substitute parts are identified based on matching electrical ratings, package compatibility, and thermal specifications to ensure functional interchangeability in circuit designs.
Substiute Parts
Key Parameters
| Parameter | SR104 B0G |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified (Io) | 1 A |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 1 A |
| Speed | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Current - Reverse Leakage @ Vr | 500 µA @ 40 V |
| Mounting Type | Through Hole |
| Package / Case | DO-204AL, DO-41, Axial |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Technology | Schottky |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitute parts for the SR104 B0G are grouped based on the following critical parameters that determine functional interchangeability:
Primary Matching Criteria:
- Voltage - DC Reverse (Vr) (Max): 40 V or higher
- Current - Average Rectified (Io): 1 A
- Technology: Schottky
- Mounting Type: Through Hole
- Package / Case: DO-204AL or DO-41 axial configuration
- Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)
Secondary Compatibility Factors:
- Operating Temperature Range: Must encompass or exceed the application's thermal requirements
- Voltage - Forward (Vf): Acceptable range for circuit operation
- Current - Reverse Leakage: Must not exceed circuit leakage specifications
- Regulatory Compliance: RoHS3 and REACH status alignment
Parts are classified as direct substitutes when all primary criteria are met with identical or superior electrical ratings. Parts with higher reverse voltage ratings (45 V) remain functionally compatible for 40 V applications. Variations in forward voltage drop and reverse leakage are noted for circuit-specific evaluation.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | Reverse Leakage @ Vr | Operating Temp (Junction) | Package | RoHS3 |
|---|---|---|---|---|---|---|---|---|
| SR104 B0G | Taiwan Semiconductor Corporation | 40 V | 1 A | 550 mV @ 1 A | 500 µA @ 40 V | -55°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819 | Microchip Technology | 45 V | 1 A | 490 mV @ 1 A | 50 µA @ 45 V | -65°C ~ 125°C | DO-204AL (DO-41) | Not specified |
| 1N5819RL | STMicroelectronics | 40 V | 1 A | 550 mV @ 1 A | 500 µA @ 40 V | -55°C ~ 150°C | DO-204AL (DO-41) | Yes |
| SB140-T | Diodes Incorporated | 40 V | 1 A | 500 mV @ 1 A | 500 µA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| SB140E-G | Comchip Technology | 40 V | 1 A | 500 mV @ 1 A | 500 µA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819-E3/53 | Vishay General Semiconductor - Diodes Division | 40 V | 1 A | 900 mV @ 3.1 A | 1 mA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819-E3/54 | Vishay General Semiconductor - Diodes Division | 40 V | 1 A | 600 mV @ 1 A | 1 mA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819-E3/73 | Vishay General Semiconductor - Diodes Division | 40 V | 1 A | 600 mV @ 1 A | 1 mA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819-G | Comchip Technology | 40 V | 1 A | 600 mV @ 1 A | 1 mA @ 40 V | -55°C ~ 150°C | DO-204AL (DO-41) | Yes |
| 1N5819-T | Diodes Incorporated | 40 V | 1 A | 600 mV @ 1 A | 1 mA @ 40 V | -65°C ~ 125°C | DO-204AL (DO-41) | Yes |
| 1N5819-TP | Micro Commercial Co | 40 V | 1 A | 600 mV @ 1 A | 1 mA @ 40 V | -55°C ~ 125°C | DO-204AL (DO-41) | Yes |
Engineering Selection Recommendations
Direct Substitutes (Identical Electrical and Thermal Ratings):
The 1N5819RL (STMicroelectronics) provides the closest electrical match to the SR104 B0G, with identical reverse voltage (40 V), forward voltage (550 mV @ 1 A), and reverse leakage (500 µA @ 40 V) specifications. The 1N5819RL extends the maximum junction temperature to 150°C, providing enhanced thermal margin. Both components are RoHS3 compliant and REACH unaffected.
Functionally Compatible Substitutes (Equivalent Performance):
The SB140-T (Diodes Incorporated) and SB140E-G (Comchip Technology) meet all primary electrical criteria with 40 V reverse voltage and 1 A current rating. Both feature slightly lower forward voltage (500 mV @ 1 A) compared to the SR104 B0G, resulting in reduced power dissipation. Operating temperature ranges extend to -65°C, providing broader thermal coverage. Both are RoHS3 compliant.
Higher Voltage Rating Substitutes:
The 1N5819 (Microchip Technology) is rated for 45 V reverse voltage, exceeding the SR104 B0G specification. This part is suitable for applications where the 40 V rating is marginal. Forward voltage is lower (490 mV @ 1 A), and reverse leakage is significantly reduced (50 µA @ 45 V). Operating temperature range extends to -65°C.
Vishay 1N5819 Variants (E3/53, E3/54, E3/73):
These Vishay parts maintain 40 V reverse voltage and 1 A current ratings with extended operating temperature to -65°C. Forward voltage specifications vary: 1N5819-E3/53 is specified at 900 mV @ 3.1 A (not directly comparable at 1 A), while 1N5819-E3/54 and 1N5819-E3/73 are specified at 600 mV @ 1 A. Reverse leakage is elevated to 1 mA @ 40 V. All are RoHS3 compliant.
Comchip 1N5819-G:
This variant extends the maximum junction temperature to 150°C while maintaining 40 V reverse voltage and 1 A current. Forward voltage is 600 mV @ 1 A with 1 mA reverse leakage. Operating temperature range is -55°C ~ 150°C. RoHS3 compliant.
Diodes Incorporated 1N5819-T:
Rated for 40 V reverse voltage and 1 A current with 600 mV forward voltage @ 1 A. Operating temperature range is -65°C ~ 125°C. Reverse leakage is 1 mA @ 40 V. RoHS3 compliant. High inventory availability (75,300 pcs).
Micro Commercial Co 1N5819-TP:
Meets 40 V reverse voltage and 1 A current specifications with 600 mV forward voltage @ 1 A. Reverse recovery time is specified at 10 ns. Operating temperature range is -55°C ~ 125°C. RoHS3 compliant.
All substitute parts listed maintain Schottky technology, fast recovery characteristics (≤ 500 ns), through-hole mounting, and DO-204AL/DO-41 axial package compatibility. Selection should be based on circuit-specific requirements for forward voltage drop, reverse leakage tolerance, and thermal operating range.
Frequently Asked Questions (FAQ)
Q: Can the 1N5819 (45 V rating) be used in place of the SR104 B0G (40 V rating)?
A: Yes. The 1N5819 is rated for 45 V reverse voltage, which exceeds the SR104 B0G specification of 40 V. Higher voltage-rated diodes are functionally compatible in lower-voltage applications. The 1N5819 also features lower forward voltage (490 mV @ 1 A) and significantly reduced reverse leakage (50 µA @ 45 V), resulting in improved circuit performance.
Q: What is the difference between the Vishay 1N5819-E3/54 and 1N5819-E3/73 variants?
A: Both parts are electrically identical with 40 V reverse voltage, 1 A current rating, and 600 mV forward voltage @ 1 A. The designations E3/54 and E3/73 represent different manufacturing date codes or tape reel configurations. Electrical performance and package compatibility are equivalent. Selection between these variants is based on inventory availability and supplier preference.
Q: Are all substitute parts RoHS3 compliant?
A: All listed substitute parts are RoHS3 compliant except the Microchip 1N5819, which does not specify RoHS status in the provided data. For applications requiring RoHS3 certification, the 1N5819RL (STMicroelectronics), SB140-T (Diodes Incorporated), SB140E-G (Comchip Technology), Vishay 1N5819 variants (E3/53, E3/54, E3/73), 1N5819-G (Comchip), 1N5819-T (Diodes Incorporated), and 1N5819-TP (Micro Commercial Co) are all suitable.
Q: What is the significance of forward voltage differences between substitute parts?
A: Forward voltage (Vf) directly affects power dissipation and circuit efficiency. The SR104 B0G is specified at 550 mV @ 1 A. Substitutes with lower Vf (such as SB140-T at 500 mV or 1N5819 at 490 mV) reduce power loss and heat generation. Substitutes with higher Vf (such as 1N5819-E3/54 at 600 mV) increase power dissipation. Selection depends on thermal budget and efficiency requirements of the application.
Q: Can reverse leakage differences affect circuit operation?
A: Yes. The SR104 B0G specifies 500 µA reverse leakage @ 40 V. The 1N5819 (Microchip) reduces this to 50 µA @ 45 V, while Vishay and other variants increase it to 1 mA @ 40 V. Higher reverse leakage increases standby current and heat generation. Applications with strict leakage specifications should select parts with lower reverse leakage ratings.
Q: Are all substitute parts available in the same DO-204AL (DO-41) package?
A: Yes. All listed substitute parts are specified for DO-204AL or DO-41 axial through-hole packages. These designations refer to the same physical package configuration. Parts are mechanically and electrically interchangeable in PCB layouts designed for DO-41 axial components.
Q: What is the difference between operating temperature ranges of substitute parts?
A: The SR104 B0G operates from -55°C to 125°C. Some substitutes extend the lower limit to -65°C (1N5819, SB140-T, SB140E-G, 1N5819-E3/54, 1N5819-E3/73, 1N5819-T) or upper limit to 150°C (1N5819RL, 1N5819-G). Extended temperature ranges provide design margin for applications operating in extreme thermal environments. Selection should match the application's actual operating temperature requirements.
Q: Is the Microchip 1N5819 suitable for RoHS3-compliant applications?
A: The Microchip 1N5819 does not specify RoHS3 status in the provided data. For applications requiring documented RoHS3 compliance, alternative parts with explicit RoHS3 certification should be selected, such as the 1N5819RL, SB140-T, SB140E-G, or Vishay 1N5819 variants.
Q: What factors should determine the choice between SB140-T and 1N5819-T?
A: Both parts meet the SR104 B0G electrical specifications with 40 V reverse voltage and 1 A current. The SB140-T (Diodes Incorporated) features 500 mV forward voltage @ 1 A, while the 1N5819-T (Diodes Incorporated) is specified at 600 mV @ 1 A. The SB140-T provides lower power dissipation. The 1N5819-T offers significantly higher inventory availability (75,300 pcs vs. 5,200 pcs). Selection depends on power budget and supply chain requirements.
Q: Can the 1N5819-E3/53 be used despite its different forward voltage specification?
A: The 1N5819-E3/53 is specified at 900 mV @ 3.1 A, which is not directly comparable to the SR104 B0G specification of 550 mV @ 1 A. At the 1 A operating point, the actual forward voltage of the 1N5819-E3/53 is not provided. This part should be used only if circuit simulation or testing confirms acceptable forward voltage performance at the intended operating current.
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