SPW20N60CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The SPW20N60CFDFKSA1 is an N-Channel 650V 20.7A MOSFET manufactured by Infineon Technologies, housed in a TO-247-3 through-hole package. This device belongs to the CoolMOS™ series and is rated for 208W power dissipation at case temperature. The part is currently marked as Not For New Designs, necessitating identification of functionally equivalent alternatives for ongoing applications and new development initiatives. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-247-3 package format.

Substiute Parts

SPW20N60CFDFKSA1
Infineon TechnologiesIn Stock: 928SPW20N60CFDFKSA1 Datasheet
SPW20N60CFDFKSA1
Current Part
IRFP27N60KPBF
Vishay SiliconixIn Stock: 17065IRFP27N60KPBF Datasheet
IRFP27N60KPBF
MFR Recommended
IXFH22N60P
IXYSIn Stock: 6309IXFH22N60P Datasheet
IXFH22N60P
MFR Recommended
IXFH30N60P
IXYSIn Stock: 2027IXFH30N60P Datasheet
IXFH30N60P
MFR Recommended
IXFX38N80Q2
IXYSIn Stock: 14041IXFX38N80Q2 Datasheet
IXFX38N80Q2
MFR Recommended
IXTH30N60P
IXYSIn Stock: 1442IXTH30N60P Datasheet
IXTH30N60P
MFR Recommended
STW18N60M2
STMicroelectronicsIn Stock: 1362STW18N60M2 Datasheet
STW18N60M2
MFR Recommended

Key Parameters

Parameter SPW20N60CFDFKSA1 Unit
Drain to Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 20.7 A
Rds On (Max) @ Id, Vgs 220 mOhm @ 13.1A, 10V mOhm
Gate Charge (Qg) @ Vgs 124 nC @ 10V
Power Dissipation (Max) 208 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3 Through Hole
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria applied strictly to the provided specifications:

Primary Compatibility Criteria:

  • Package Type: TO-247-3 or compatible through-hole variant (TO-247AC, TO-247AD, PLUS247™-3)
  • Drain to Source Voltage (Vdss): Equal to or greater than 650V
  • Continuous Drain Current (Id): Equal to or greater than 20.7A
  • Rds On (Max): Equal to or less than 220 mOhm at comparable gate voltage
  • Operating Temperature Range: Minimum -55°C to maximum 150°C
  • RoHS3 Compliance and REACH Unaffected status

Substitute Parts Identified:

Group 1 - Direct Voltage Class (600V Devices): IRFP27N60KPBF, IXFH22N60P, IXFH30N60P, IXTH30N60P, STW18N60M2

These parts operate at 600V, which is below the 650V rating of the main part. Substitution is valid for applications where the actual operating voltage does not exceed 600V.

Group 2 - Higher Voltage Class (800V Device): IXFX38N80Q2

This part operates at 800V, exceeding the 650V specification. Substitution is valid for applications requiring higher voltage margin or operating in elevated voltage environments.

Parameter Comparison

Parameter SPW20N60CFDFKSA1 IRFP27N60KPBF IXFH22N60P IXFH30N60P IXTH30N60P STW18N60M2 IXFX38N80Q2 Unit
Manufacturer Infineon Vishay Siliconix IXYS IXYS IXYS STMicroelectronics IXYS
Vdss 650 600 600 600 600 600 800 V
Id @ 25°C 20.7 27 22 30 30 13 38 A
Rds On (Max) 220 @ 13.1A, 10V 220 @ 16A, 10V 350 @ 11A, 10V 240 @ 15A, 10V 240 @ 15A, 10V 280 @ 6.5A, 10V 220 @ 19A, 10V mOhm
Gate Charge (Qg) 124 @ 10V 180 @ 10V 58 @ 10V 82 @ 10V 82 @ 10V 21.5 @ 10V 190 @ 10V nC
Power Dissipation (Max) 208 500 400 500 540 110 735 W
Operating Temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Package TO-247-3 TO-247AC TO-247AD TO-247AD TO-247 TO-247-3 PLUS247™-3
Product Status Not For New Designs Active Active Active Active Active Active
RoHS3 Compliance Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

For Applications Operating at or Below 600V:

IRFP27N60KPBF (Vishay Siliconix) is the primary recommended substitute. This device maintains 220 mOhm maximum Rds On specification, matching the SPW20N60CFDFKSA1 exactly. Current rating of 27A exceeds the 20.7A requirement. Power dissipation capability of 500W provides substantial thermal margin. Product status is Active with full RoHS3 compliance and REACH Unaffected designation. Inventory availability is 16,963 units.

IXFH30N60P (IXYS) and IXTH30N60P (IXYS) are secondary alternatives. Both provide 30A continuous drain current and 240 mOhm Rds On, with 500W and 540W power dissipation respectively. Both maintain Active product status and full compliance certifications. IXFH30N60P uses TO-247AD package variant; IXTH30N60P uses standard TO-247 package. Inventory levels are 2,000 and 1,402 units respectively.

IXFH22N60P (IXYS) is suitable for applications with lower current demands. This device provides 22A continuous drain current with 400W power dissipation. Gate charge is significantly lower at 58 nC, reducing driver requirements. Product status is Active with full compliance. Inventory is 6,250 units.

STW18N60M2 (STMicroelectronics) is applicable only where continuous drain current requirement does not exceed 13A. This device provides the lowest gate charge at 21.5 nC and lowest power dissipation at 110W. Rds On is 280 mOhm, exceeding the SPW20N60CFDFKSA1 specification. Product status is Active with full compliance. Inventory is 1,322 units.

For Applications Requiring Higher Voltage Margin:

IXFX38N80Q2 (IXYS) operates at 800V, providing 200V additional voltage headroom above the SPW20N60CFDFKSA1 specification. This device delivers 38A continuous drain current with 220 mOhm Rds On and 735W power dissipation. Package is PLUS247™-3, a TO-247-3 variant. Product status is Active with full compliance. Inventory is 13,988 units. Substitution is valid for applications where higher voltage operation is required or beneficial.

Compliance and Certification:

All substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the SPW20N60CFDFKSA1 environmental and regulatory requirements. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture Sensitivity Level is 1 (Unlimited) for all devices.

Frequently Asked Questions (FAQ)

Q: Can STW18N60M2 be used as a direct replacement for SPW20N60CFDFKSA1?

A: STW18N60M2 is not suitable as a direct replacement for applications requiring continuous drain current above 13A. The SPW20N60CFDFKSA1 is rated for 20.7A continuous drain current, while STW18N60M2 is rated for only 13A. Additionally, Rds On is 280 mOhm compared to 220 mOhm for the main part. Substitution is valid only for applications with maximum continuous drain current not exceeding 13A.

Q: What is the significance of the 600V versus 650V voltage rating difference?

A: The SPW20N60CFDFKSA1 operates at 650V maximum drain-source voltage. Substitute parts rated at 600V are suitable for applications where the actual operating voltage does not exceed 600V. For applications operating at voltages between 600V and 650V, IXFX38N80Q2 (800V rating) is the appropriate choice. Voltage derating must be verified against specific application requirements.

Q: Are TO-247AD and TO-247AC packages mechanically compatible with TO-247-3?

A: TO-247AD, TO-247AC, and standard TO-247 packages are mechanically compatible with TO-247-3 footprints in through-hole applications. All variants use three leads in the same physical arrangement. PLUS247™-3 is a variant of TO-247-3 and is also mechanically compatible. Pin assignment and lead spacing are identical across these package variants.

Q: Why is IRFP27N60KPBF recommended as the primary substitute?

A: IRFP27N60KPBF is recommended as the primary substitute because it maintains exact electrical equivalence in the critical parameter of Rds On (220 mOhm maximum), exceeds the continuous drain current requirement (27A versus 20.7A), and provides superior power dissipation capability (500W versus 208W). The device is in Active product status with full RoHS3 compliance and has the highest inventory availability (16,963 units) among all substitutes.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge (Qg) affects driver circuit requirements and switching speed. The SPW20N60CFDFKSA1 has 124 nC gate charge. Substitutes range from 21.5 nC (STW18N60M2) to 190 nC (IXFX38N80Q2). Lower gate charge reduces driver power dissipation and enables faster switching. Higher gate charge requires more driver current but may provide improved EMI characteristics. Driver circuit compatibility must be verified for each substitute selection.

Q: Can IXFX38N80Q2 be used in applications designed for 650V operation?

A: Yes, IXFX38N80Q2 can be used in applications designed for 650V operation. The 800V rating provides 150V additional voltage margin above the 650V specification. This substitution is valid and beneficial for applications requiring higher voltage headroom or operating in elevated voltage environments. No circuit modifications are required for voltage compatibility.

Q: What inventory considerations apply to substitute part selection?

A: Inventory availability varies significantly among substitutes. IRFP27N60KPBF has the highest availability at 16,963 units. IXFX38N80Q2 has 13,988 units. IXFH22N60P has 6,250 units. IXTH30N60P has 1,402 units. IXFH30N60P has 2,000 units. STW18N60M2 has 1,322 units. For applications requiring immediate availability or high-volume procurement, IRFP27N60KPBF and IXFX38N80Q2 are preferred choices.

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