SPW07N60CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The SPW07N60CFDFKSA1 is an N-Channel 650V 6.6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across voltage ratings, current handling capacity, thermal characteristics, and package form factors to ensure direct replacement capability in existing applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6.6	A (Tc)
Rds On (Max) @ Id, Vgs	700	mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs	47	nC @ 10V
Power Dissipation (Max)	83	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Input Capacitance (Ciss) (Max) @ Vds	790	pF @ 25V
Vgs(th) (Max) @ Id	5	V @ 300µA
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the SPW07N60CFDFKSA1 is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must support a Drain to Source Voltage (Vdss) rating equal to or greater than 650V to maintain voltage margin in the application circuit.

Current Handling: The continuous drain current (Id) rating must equal or exceed 6.6A at 25°C to support the thermal and electrical load requirements of the original design.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed 700mOhm at the specified gate-source voltage (10V) to maintain power dissipation and thermal performance within design limits.

Thermal Performance: Power dissipation capability must be sufficient to handle the 83W maximum thermal load at the case temperature (Tc).

Package Form Factor: While the original part uses TO-247-3 packaging, substitute parts in alternative through-hole packages (such as TO-220) may be acceptable if mechanical mounting and thermal management provisions are verified for the specific application.

Gate Charge and Input Capacitance: These parameters influence switching speed and driver circuit requirements. Substitutes with comparable or lower values maintain compatibility with existing gate drive circuitry.

The STP10NM60ND from STMicroelectronics meets the core electrical substitution criteria, though with specific trade-offs in voltage rating and package configuration.

Parameter Comparison

Parameter	SPW07N60CFDFKSA1 (Main)	STP10NM60ND (Substitute)	Unit
Manufacturer	Infineon Technologies	STMicroelectronics	—
Series	CoolMOS™	FDmesh™ II	—
Drain to Source Voltage (Vdss)	650	600	V
Continuous Drain Current (Id) @ 25°C	6.6	8	A (Tc)
Rds On (Max) @ Id, Vgs	700 @ 4.6A, 10V	600 @ 4A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	47 @ 10V	20 @ 10V	nC
Power Dissipation (Max)	83	70	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-220-3	Through Hole
Input Capacitance (Ciss) (Max) @ Vds	790 @ 25V	577 @ 50V	pF
Vgs(th) (Max) @ Id	5 @ 300µA	5 @ 250µA	V
Vgs (Max)	±20	±25	V
Product Status	Obsolete	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

Voltage Rating Consideration: The STP10NM60ND operates at 600V maximum Vdss, which is 50V lower than the SPW07N60CFDFKSA1 (650V). This substitution is acceptable only in applications where the circuit design voltage margin permits operation at 600V. Applications requiring the full 650V rating cannot use this substitute without circuit redesign.

Current and Thermal Performance: The STP10NM60ND provides higher continuous drain current (8A versus 6.6A) and lower on-state resistance (600mOhm versus 700mOhm), resulting in improved thermal efficiency. However, the maximum power dissipation is lower (70W versus 83W), which may limit thermal headroom in high-power applications.

Switching Characteristics: The STP10NM60ND exhibits significantly lower gate charge (20nC versus 47nC) and input capacitance (577pF versus 790pF), enabling faster switching speeds and reduced gate driver power consumption. This represents a performance improvement over the original part.

Package Compatibility: The TO-220-3 package of the STP10NM60ND differs mechanically from the TO-247-3 package of the SPW07N60CFDFKSA1. PCB layout modifications and thermal management verification are required for direct substitution.

Compliance and Regulatory Status: Both parts maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99), ensuring regulatory continuity. Both parts carry MSL Level 1 (Unlimited) moisture sensitivity ratings.

Product Status: Both parts are classified as obsolete. Long-term availability cannot be assured for either device. For new designs, evaluation of current-generation alternatives is recommended.

Frequently Asked Questions (FAQ)

Q: Can the STP10NM60ND directly replace the SPW07N60CFDFKSA1 in all applications?

A: Direct replacement is not universal. The STP10NM60ND operates at 600V maximum, compared to 650V for the SPW07N60CFDFKSA1. Substitution is valid only in circuits designed to operate within 600V limits. Additionally, the TO-220-3 package differs mechanically from TO-247-3, requiring PCB layout verification. Thermal management must be re-evaluated due to the lower maximum power dissipation rating (70W versus 83W).

Q: What are the key electrical advantages of the STP10NM60ND?

A: The STP10NM60ND provides lower on-state resistance (600mOhm versus 700mOhm), higher continuous current rating (8A versus 6.6A), significantly lower gate charge (20nC versus 47nC), and reduced input capacitance (577pF versus 790pF). These characteristics result in improved efficiency, faster switching, and reduced gate driver requirements.

Q: Are there voltage margin implications when substituting the STP10NM60ND?

A: Yes. The 50V reduction in Vdss rating (from 650V to 600V) reduces the voltage safety margin in the circuit. Applications operating near the upper voltage limits of the original design may exceed the safe operating area of the substitute. Circuit voltage stress analysis is required before substitution.

Q: How do the package differences affect substitution?

A: The SPW07N60CFDFKSA1 uses TO-247-3 packaging, while the STP10NM60ND uses TO-220-3 packaging. These packages have different pin configurations, lead spacing, and thermal characteristics. PCB layout modifications are necessary, and thermal management provisions must be re-evaluated. The TO-220 package typically has lower thermal performance than TO-247.

Q: What thermal considerations apply to this substitution?

A: The STP10NM60ND has a lower maximum power dissipation rating (70W versus 83W). In applications approaching the 83W thermal limit of the original part, the substitute may operate closer to its maximum rating, reducing thermal margin. Thermal simulation or testing is recommended for high-power applications.

Q: Are both parts subject to the same regulatory requirements?

A: Yes. Both the SPW07N60CFDFKSA1 and STP10NM60ND share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and moisture sensitivity levels (MSL 1, Unlimited). No regulatory compliance changes result from substitution.

Q: What is the impact of lower gate charge on the gate driver circuit?

A: The STP10NM60ND requires significantly less gate charge (20nC versus 47nC) to reach full conduction. Existing gate driver circuits designed for the SPW07N60CFDFKSA1 will operate with reduced power consumption and faster switching transitions. No circuit modifications are required, but gate driver performance will improve.

Q: Should new designs use either of these parts?

A: Both parts are classified as obsolete. Neither is recommended for new designs. Current-generation MOSFET alternatives should be evaluated to ensure long-term availability and access to improved performance characteristics and manufacturing support.

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