SPU09P06PL P-Channel MOSFET 60V 9.7A Equivalent & Substitute Parts

Part Overview

The SPU09P06PL is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 9.7A continuous drain current at 25°C. The device is packaged in TO-251-3 (IPak) configuration and rated for 42W power dissipation. This part carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	9.7	A (Tc)
Rds On (Max) @ Id, Vgs	250	mOhm @ 6.8A, 10V
Gate Threshold Voltage Vgs(th) (Max)	2	V @ 250µA
Gate Charge (Qg) (Max)	21	nC @ 10V
Power Dissipation (Max)	42	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-251-3 (IPak)	Through Hole
Maximum Gate Voltage	±20	V
Input Capacitance (Ciss) (Max)	450	pF @ 25V

Substitute Part Grouping Explanation

Substitution eligibility for the SPU09P06PL is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 60V
Continuous Drain Current (Id) must meet or exceed 9.7A at 25°C
On-state resistance (Rds On) must not significantly exceed 250mOhm to maintain thermal performance
Gate threshold voltage (Vgs(th)) must be compatible with existing drive circuitry
Power dissipation capability must support 42W thermal requirements
Maximum gate voltage rating must accommodate ±20V operation

Mechanical Compatibility Criteria:

Package type must be TO-251-3 (IPak) or equivalent TO-251AA configuration
Through-hole mounting compatibility required
Pin configuration must match P-TO251-3-1 supplier package designation

The IRFU9024PBF from Vishay Siliconix qualifies as a direct substitute based on matching electrical specifications within acceptable engineering tolerances and identical package configuration.

Parameter Comparison

Parameter	SPU09P06PL (Infineon)	IRFU9024PBF (Vishay)	Compatibility Assessment
FET Type	P-Channel	P-Channel	Identical
Drain to Source Voltage (Vdss)	60V	60V	Identical
Continuous Drain Current (Id) @ 25°C	9.7A (Tc)	8.8A (Tc)	Substitute rated 90.7% of original
Rds On (Max) @ Id, Vgs	250mOhm @ 6.8A, 10V	280mOhm @ 5.3A, 10V	Substitute 12% higher; acceptable for equivalent thermal class
Gate Threshold Voltage Vgs(th) (Max)	2V @ 250µA	4V @ 250µA	Substitute threshold 2V higher; verify drive circuit compatibility
Gate Charge (Qg) (Max)	21nC @ 10V	19nC @ 10V	Substitute 9.5% lower; favorable for switching performance
Power Dissipation (Max)	42W (Tc)	42W (Tc)	Identical thermal rating
Operating Temperature Range	-55 to 175°C (TJ)	-55 to 150°C (TJ)	Substitute 25°C narrower upper limit
Maximum Gate Voltage	±20V	±20V	Identical
Input Capacitance (Ciss) (Max)	450pF @ 25V	570pF @ 25V	Substitute 26.7% higher; affects gate drive requirements
Package Type	TO-251-3 (IPak)	TO-251AA (IPak)	Mechanically compatible; identical pinout
Mounting Type	Through Hole	Through Hole	Identical
Product Status	Obsolete	Active	Substitute actively manufactured and supported

Engineering Selection Recommendations

Primary Substitute: IRFU9024PBF

The IRFU9024PBF is the qualified equivalent for SPU09P06PL replacement based on the following factors:

Electrical Performance: The IRFU9024PBF maintains the same 60V Vdss rating and 42W power dissipation capability. The continuous drain current specification of 8.8A represents 90.7% of the original 9.7A rating, which is acceptable for most applications operating below maximum current conditions. The on-state resistance increase of 12% (280mOhm versus 250mOhm) remains within acceptable thermal performance margins for the identical 42W power dissipation class.

Compliance and Availability: The IRFU9024PBF carries Active product status with 688,400 units in stock, ensuring long-term procurement availability. The device is RoHS3 Compliant and REACH Affected, meeting current environmental and regulatory requirements. The SPU09P06PL Obsolete status necessitates transition to this active alternative.

Package Compatibility: Both devices utilize TO-251-3/TO-251AA through-hole packaging with identical pinout configuration, enabling direct board-level substitution without layout modifications.

Design Considerations: The IRFU9024PBF exhibits a higher gate threshold voltage (4V versus 2V), requiring verification that existing gate drive circuits can reliably switch the substitute device. The increased input capacitance (570pF versus 450pF) may require gate drive current adjustment for optimal switching performance. The operating temperature upper limit of 150°C (versus 175°C) must be confirmed acceptable for the application's thermal environment.

Frequently Asked Questions (FAQ)

Q: Can IRFU9024PBF directly replace SPU09P06PL without circuit modifications?

A: Mechanical and pinout compatibility is direct. Electrical verification is required for gate drive circuit compatibility due to the 2V higher gate threshold voltage and 26.7% higher input capacitance. Applications operating below 8.8A continuous current and 150°C junction temperature require no design changes.

Q: What is the significance of the 8.8A versus 9.7A current rating difference?

A: The IRFU9024PBF is rated for 8.8A continuous drain current compared to the original 9.7A. This 0.9A difference (9.3% reduction) is acceptable for designs with current margin. Applications requiring the full 9.7A specification must conduct thermal analysis to confirm the substitute's 42W power dissipation capability is sufficient.

Q: How does the higher gate threshold voltage (4V vs 2V) affect circuit operation?

A: The IRFU9024PBF requires 4V gate-source voltage to reach threshold compared to 2V for the SPU09P06PL. Verify that the gate drive circuit can reliably deliver 4V above the source potential. Low-voltage gate drive circuits (3.3V logic) may require redesign or additional drive stage buffering.

Q: Are there thermal performance differences between these devices?

A: Both devices are rated for 42W maximum power dissipation at case temperature (Tc). The IRFU9024PBF's slightly higher on-state resistance (280mOhm vs 250mOhm) results in marginally higher conduction losses. For equivalent current and duty cycle, thermal performance is comparable. The substitute's maximum junction temperature of 150°C (versus 175°C) must be verified acceptable for the application environment.

Q: What is the impact of increased input capacitance (570pF vs 450pF)?

A: The 26.7% higher input capacitance increases gate charge requirements and may extend switching transition times. Gate drive circuits must supply sufficient current to charge the higher capacitance within the required switching speed window. High-frequency switching applications should verify gate drive performance with the substitute device.

Q: Is the IRFU9024PBF suitable for high-temperature applications?

A: The IRFU9024PBF maximum junction temperature rating is 150°C, compared to 175°C for the SPU09P06PL. Applications requiring operation above 150°C junction temperature cannot use this substitute. Thermal analysis must confirm the application's maximum junction temperature remains below 150°C under worst-case conditions.

Q: What compliance certifications does the IRFU9024PBF carry?

A: The IRFU9024PBF is RoHS3 Compliant and REACH Affected. The original SPU09P06PL is REACH Unaffected. Both devices carry EAR99 ECCN classification and 8541.29.0095 HTSUS code. Verify compliance requirements for your specific application and supply chain.

Q: Can multiple IRFU9024PBF devices be paralleled to achieve higher current capacity?

A: Parallel operation is not addressed in the provided specifications. Consult Vishay Siliconix application notes for parallel device guidance, including gate drive considerations and current sharing techniques.

Q: What is the moisture sensitivity level for the IRFU9024PBF?

A: The IRFU9024PBF carries MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions. Storage and handling follow standard semiconductor practices without special moisture control requirements.

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