Equivalent & Substitute Parts for SPU07N60S5

Part Overview

The SPU07N60S5 is an N-Channel 600V 7.3A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-251-3 (IPAK) package for through-hole mounting. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	SPU07N60S5	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	7.3	A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	5.5	V @ 350µA
Gate Charge (Qg) (Max) @ Vgs	35	nC @ 10V
Power Dissipation (Max)	83	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-251-3 (IPAK)	Through Hole
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution eligibility for the SPU07N60S5 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal 600V
Package Type: Must be TO-251-3 (IPAK) through-hole configuration
FET Type: Must be N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 150°C minimum
Mounting Type: Must be through-hole

Secondary Electrical Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 7.3A
Rds On (Max): Substitute must not exceed 600 mOhm at specified conditions
Gate Charge (Qg): Lower values indicate improved switching performance
Power Dissipation: Substitute must support thermal requirements of the application

All four substitute parts (STU10N60M2, STU10NM60N, STU7NM60N, STU9N60M2) meet the primary compatibility criteria. Secondary parameter variations reflect design improvements in the MDmesh™ II and MDmesh™ II Plus series from STMicroelectronics.

Parameter Comparison

Parameter	SPU07N60S5	STU10N60M2	STU10NM60N	STU7NM60N	STU9N60M2	Unit
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Vdss	600	600	600	600	600	V
Id @ 25°C	7.3	7.5	10	5	5.5	A
Rds On (Max) @ 10V	600 @ 4.6A	600 @ 3A	550 @ 4A	900 @ 2.5A	780 @ 3A	mOhm
Vgs(th) (Max)	5.5	4	4	4	4	V @ 250-350µA
Gate Charge (Qg) @ 10V	35	13.5	19	14	10	nC
Power Dissipation (Max)	83	85	70	45	60	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-251-3	TO-251 (IPAK)	TO-251 (IPAK)	TO-251 (IPAK)	TO-251 (IPAK)	—
Product Status	Obsolete	Obsolete	Active	Active	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

For Direct Replacement (Closest Electrical Match): STU10N60M2 provides the closest electrical performance to the SPU07N60S5, with matching 600 mOhm Rds On specification and comparable 7.5A continuous drain current. Both are classified as obsolete; however, STU10N60M2 maintains higher inventory availability (3092 units) and achieves ROHS3 compliance.

For Active Product Line Selection: STU10NM60N and STU7NM60N are both active products from STMicroelectronics. STU10NM60N offers superior performance with 10A continuous current capability, lower Rds On (550 mOhm), and reduced gate charge (19 nC), supporting higher power applications. STU7NM60N provides conservative current handling (5A) suitable for lower-power circuit implementations.

For Optimized Gate Drive Performance: STU9N60M2 delivers the lowest gate charge specification (10 nC @ 10V), enabling faster switching transitions and reduced drive circuit stress. This part is active and ROHS3 compliant, with 5.5A continuous current rating positioned between STU7NM60N and STU10N60M2.

Compliance Considerations: All substitute parts maintain REACH Unaffected status and EAR99 export classification identical to the original SPU07N60S5. STMicroelectronics substitutes provide ROHS3 compliance, meeting modern environmental and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can STU7NM60N replace SPU07N60S5 in all applications? A: STU7NM60N is electrically compatible at the package and voltage level but provides only 5A continuous current versus the original 7.3A specification. Substitution is valid only for applications where the circuit current demand does not exceed 5A. Verify actual circuit current requirements before selection.

Q: What is the difference between STU10N60M2 and STU10NM60N? A: Both parts share 600V Vdss and TO-251 package compatibility. STU10N60M2 is obsolete with 7.5A rating and 600 mOhm Rds On. STU10NM60N is an active product with 10A rating and 550 mOhm Rds On, representing a newer design generation with improved thermal and switching characteristics.

Q: Are all substitute parts ROHS3 compliant? A: Yes. All four substitute parts (STU10N60M2, STU10NM60N, STU7NM60N, STU9N60M2) are ROHS3 compliant. The original SPU07N60S5 RoHS status is not specified in available documentation.

Q: Which substitute offers the best switching performance? A: STU9N60M2 exhibits the lowest gate charge (10 nC @ 10V), resulting in faster switching transitions and reduced gate drive power requirements. This characteristic is beneficial in high-frequency switching applications.

Q: Can I use STU10NM60N as a direct drop-in replacement? A: Yes. STU10NM60N is mechanically and electrically compatible with SPU07N60S5, featuring identical TO-251 package geometry, matching 600V Vdss rating, and superior electrical performance. As an active product with high inventory (28650 units), it is the recommended long-term replacement.

Q: What is the significance of gate charge differences between substitutes? A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower Qg values (STU9N60M2 at 10 nC) reduce gate driver stress and switching losses. Higher Qg values (SPU07N60S5 at 35 nC) require more robust gate drive circuits but may offer other performance trade-offs.

Q: Are there thermal performance differences I should consider? A: Yes. Power dissipation ratings vary: SPU07N60S5 (83W), STU10N60M2 (85W), STU10NM60N (70W), STU9N60M2 (60W), and STU7NM60N (45W). Lower dissipation indicates improved efficiency. Verify that the selected substitute's thermal rating meets or exceeds your application's power budget.

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