Equivalent & Substitute Parts for SPS02N60C3

Part Overview

The SPS02N60C3 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 650V drain-to-source voltage with 1.8A continuous drain current at 25°C. This device is packaged in TO-251-3 (IPak) configuration and is part of the CoolMOS™ series. The product is currently listed as obsolete, making identification of suitable substitute components essential for ongoing design support and procurement continuity.

Substiute Parts

SPS02N60C3

Infineon TechnologiesIn Stock: 3542SPS02N60C3 Datasheet

Current PartRFQ

STU2N62K3

STMicroelectronicsIn Stock: 1374STU2N62K3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SPS02N60C3 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support a minimum Vdss rating equal to or greater than 650V to maintain circuit protection margins.

Current Rating Compatibility: The substitute must support a continuous drain current (Id) at 25°C equal to or greater than 1.8A to handle the design load requirements.

On-State Resistance (Rds On): The substitute must maintain Rds On values within acceptable limits to preserve power dissipation characteristics and thermal performance.

Package Compatibility: The substitute must use the TO-251 (IPak) package family to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsinking arrangements.

Gate Charge and Input Capacitance: These parameters affect switching speed and drive circuit requirements; substitutes must remain within reasonable ranges to avoid circuit redesign.

Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C (TJ) or higher.

The STU2N62K3 from STMicroelectronics meets these substitution criteria with a 620V Vdss rating, 2.2A continuous drain current, compatible TO-251 (IPak) packaging, and active product status.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The SPS02N60C3 is obsolete, while the STU2N62K3 is active. Selection of the active substitute ensures long-term availability and supply chain continuity.

Electrical Performance: The STU2N62K3 provides superior electrical characteristics with higher continuous drain current (2.2A vs. 1.8A) and greater power dissipation capability (45W vs. 25W). The 620V Vdss rating is acceptable for applications designed for 650V operation, as it remains within the same voltage class and provides adequate safety margin for most high-voltage switching applications.

Compliance and Certifications: Both devices maintain REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity ratings. The STU2N62K3 includes RoHS3 compliance, providing additional environmental regulatory alignment.

Package Compatibility: Both devices use TO-251 (IPak) through-hole packaging. The STU2N62K3 is specified with short leads (TO-251AA variant), while the SPS02N60C3 uses stub leads. This minor lead configuration difference is accommodated within standard TO-251 footprint tolerances and does not prevent direct substitution on existing PCB layouts.

Thermal Performance: The STU2N62K3 offers enhanced thermal capability with 45W maximum power dissipation compared to 25W for the SPS02N60C3, providing additional thermal margin in applications operating near design limits.

Frequently Asked Questions (FAQ)

Q: Can the STU2N62K3 directly replace the SPS02N60C3 in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with compatible TO-251 (IPak) packaging, matching gate drive voltage requirements (10V), and overlapping operating temperature ranges (-55°C to 150°C). The STU2N62K3 provides equal or superior electrical performance across all critical parameters.

Q: What is the significance of the 30V difference in Vdss rating (620V vs. 650V)?

A: The STU2N62K3 operates at 620V Vdss, which is 4.6% lower than the SPS02N60C3 at 650V. Both devices remain within the same voltage class for high-voltage switching applications. Applications designed for 650V operation will function with the 620V substitute, though the voltage margin is reduced by 30V. Circuit analysis is required to confirm adequate safety margin for specific application requirements.

Q: How do the on-state resistance values compare?

A: The SPS02N60C3 specifies 3Ohm Rds On (Max) while the STU2N62K3 specifies 3.6Ohm Rds On (Max), both measured at 1.1A and 10V gate-source voltage. The 0.6Ohm increase results in slightly higher conduction losses. For applications sensitive to on-state resistance, thermal analysis should confirm acceptable power dissipation with the substitute device.

Q: Are there package lead configuration differences?

A: The SPS02N60C3 uses TO-251-3 stub leads, while the STU2N62K3 uses TO-251-3 short leads (TO-251AA variant). Both configurations fit standard TO-251 footprints. Lead length differences are minor and do not prevent direct PCB substitution.

Q: What is the impact of higher gate charge on the drive circuit?

A: The STU2N62K3 specifies 15nC gate charge compared to 12.5nC for the SPS02N60C3. This 2.5nC increase requires slightly more charge delivery from the gate drive circuit but does not necessitate drive circuit redesign for most applications. Switching speed may increase marginally due to the higher input capacitance (340pF vs. 200pF).

Q: Does the STU2N62K3 require different thermal management?

A: The STU2N62K3 has superior thermal capability (45W vs. 25W maximum power dissipation), allowing operation with lower junction temperatures or higher ambient temperatures. Existing heatsinking arrangements designed for the SPS02N60C3 will provide adequate or improved thermal performance with the substitute.

Q: Are there regulatory or compliance differences?

A: The STU2N62K3 includes RoHS3 compliance certification, while the SPS02N60C3 does not specify this status. Both devices maintain REACH Unaffected status and MSL Level 1 ratings. The STU2N62K3 provides enhanced environmental regulatory alignment for new designs.