SPP80N06S2-05 Equivalent & Substitute Parts

Part Overview

The SPP80N06S2-05 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 80A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, indicating it has been discontinued and is no longer recommended for new designs. Finding equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access components with active manufacturing status and current compliance certifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	55	V
Current - Continuous Drain (Id) @ 25°C	80	A
Rds On (Max) @ Id, Vgs	5.1	mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs	170	nC @ 10V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the SPP80N06S2-05 are selected based on strict electrical and mechanical parameter matching within the allowed tolerances for N-Channel MOSFET applications. The substitution criteria are:

Primary Matching Parameters:

FET Type: N-Channel (required match)
Drain to Source Voltage (Vdss): 55V (required match)
Current - Continuous Drain (Id): 80A (required match)
Package / Case: TO-220-3 (required match for mechanical compatibility)
Mounting Type: Through Hole (required match)
Operating Temperature Range: -55°C to 175°C (required match)

Secondary Electrical Parameters (within acceptable engineering tolerance):

Rds On (Max): Substitute values must not exceed the original specification to maintain thermal performance
Gate Charge (Qg): Variations acceptable within switching speed requirements
Power Dissipation: 300W (required match)

The two substitute parts listed—STP80NF55-06 and STP80NF55-08 from STMicroelectronics—meet all primary matching criteria and are electrically compatible with the SPP80N06S2-05 in equivalent circuit applications.

Parameter Comparison

Parameter	SPP80N06S2-05 (Infineon)	STP80NF55-06 (STMicroelectronics)	STP80NF55-08 (STMicroelectronics)
Manufacturer	Infineon Technologies	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Vdss	55V	55V	55V
Id @ 25°C	80A	80A	80A
Rds On (Max)	5.1 mOhm @ 80A, 10V	6.5 mOhm @ 40A, 10V	8 mOhm @ 40A, 10V
Gate Charge (Qg) (Max)	170 nC @ 10V	189 nC @ 10V	155 nC @ 10V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss)	6790 pF @ 25V	4400 pF @ 25V	3850 pF @ 25V
Power Dissipation (Max)	300W	300W	300W
Operating Temperature	-55°C to 175°C	-55°C to 175°C	-55°C to 175°C
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Not For New Designs
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP80NF55-06 (Recommended Primary Substitute)

The STP80NF55-06 is the preferred substitute for the obsolete SPP80N06S2-05. This part carries Active product status, indicating ongoing manufacturing support and availability. It holds ROHS3 compliance certification, meeting current environmental and regulatory requirements. The electrical parameters are within acceptable engineering tolerance: Rds On is 6.5 mOhm (compared to 5.1 mOhm in the original), representing a 27% increase in on-resistance. Gate charge is 189 nC, slightly higher than the original 170 nC. These variations remain within acceptable limits for most switching applications while maintaining the same 80A continuous current rating, 55V voltage rating, and 300W power dissipation capability. Inventory availability is substantial at 15,703 pieces.

STP80NF55-08 (Secondary Substitute)

The STP80NF55-08 is classified as Not For New Designs, indicating it is in the process of being phased out. While electrically compatible with the SPP80N06S2-05, this part should be selected only when STP80NF55-06 is unavailable. The Rds On specification is 8 mOhm at 40A, representing a 57% increase relative to the original part. Gate charge is lower at 155 nC, which may provide faster switching characteristics. ROHS3 compliance is maintained. This part is suitable for legacy design support or applications where higher on-resistance is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the STP80NF55-06 be used as a direct drop-in replacement for the SPP80N06S2-05?

A: Yes. Both parts share identical electrical ratings (55V, 80A, 300W), the same TO-220-3 package, through-hole mounting, and identical operating temperature range (-55°C to 175°C). The primary difference is Rds On specification: 6.5 mOhm versus 5.1 mOhm. This difference affects thermal performance and power dissipation but does not prevent direct substitution in equivalent circuit applications.

Q: What is the significance of the Rds On difference between the SPP80N06S2-05 and STP80NF55-06?

A: Rds On (on-resistance) determines conduction losses in the MOSFET. The STP80NF55-06 has a higher Rds On (6.5 mOhm) compared to the SPP80N06S2-05 (5.1 mOhm). In high-current applications, this results in increased heat generation. Thermal design calculations should account for this difference. For most applications operating below maximum current ratings, this difference is manageable with proper heat sinking.

Q: Why is the SPP80N06S2-05 marked as obsolete?

A: Obsolete status indicates the manufacturer (Infineon Technologies) has discontinued production and no longer supports this part. This creates supply chain risk and limits access to new inventory. Transitioning to active parts such as STP80NF55-06 ensures long-term availability and compliance with current manufacturing standards.

Q: Are there compliance differences between the SPP80N06S2-05 and its substitutes?

A: Yes. The SPP80N06S2-05 is RoHS non-compliant, while both STP80NF55-06 and STP80NF55-08 are ROHS3 compliant. For applications subject to RoHS regulations or customer requirements, the STMicroelectronics substitutes are mandatory. Both substitute parts maintain REACH Unaffected status, matching the original part.

Q: Can the STP80NF55-08 be used instead of STP80NF55-06?

A: Yes, electrically and mechanically. However, STP80NF55-08 is classified as Not For New Designs, indicating it is being phased out. STP80NF55-06 is the preferred choice for new designs and long-term applications due to its Active product status. STP80NF55-08 should be reserved for legacy support or when STP80NF55-06 is unavailable.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) affects switching speed and gate drive requirements. The SPP80N06S2-05 has 170 nC, STP80NF55-06 has 189 nC, and STP80NF55-08 has 155 nC. Higher gate charge requires more energy to switch the device, potentially increasing switching losses. Lower gate charge enables faster switching. These differences are typically accommodated by standard gate drive circuits and do not prevent substitution.

Q: Is the TO-220-3 package identical across all three parts?

A: Yes. All three parts use the TO-220-3 through-hole package with identical pin configuration and mechanical dimensions. PCB layout and thermal management mounting remain unchanged during substitution.

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