SPP47N10L Equivalent & Substitute MOSFETs Reference Page

Part Overview

The Infineon Technologies SPP47N10L is an N-channel MOSFET belonging to the SIPMOS® series. It features a maximum drain-to-source voltage of 100 V, continuous drain current up to 47A (Tc), and is housed in a TO220-3 package for through-hole mounting. As an obsolete product, direct replacement is necessary for ongoing designs and inventory support. Equivalent models must meet or exceed the main electrical and mechanical parameters to ensure safe and effective substitution.

Key Parameters

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 25 V
Power Dissipation (Max)	175W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant

Substitute Part Grouping Explanation

Substitute MOSFETs are grouped strictly based on electrical and mechanical compatibility. The following parameters define substitutability for the SPP47N10L N-channel MOSFET:

FET type: N-Channel MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): Must be >= 100 V or appropriately specified for circuit requirements
Continuous Drain Current (Id): Must be >= 47A (Tc) where application demands
Rds On (Max) at comparable Vgs and Id
Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), and Max Vgs
Package: TO-220-3 or mechanical equivalent for through-hole mounting
Compliance: RoHS status and other certifications may impact part selection in regulated applications

Parameter Comparison

Manufacturer Part Number	Manufacturer	Drain to Source Voltage (Vdss)	Continuous Drain Current (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Package / Case	RoHS Status	Product Status
SPP47N10L	Infineon Technologies	100 V	47A (Tc)	26mOhm @ 33A, 10V	2V @ 2mA	135 nC @ 10 V	±20V	2500 pF @ 25 V	175W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	RoHS non-compliant	Obsolete
HUF75639P3-F102	onsemi	100 V	56A (Tc)	25mOhm @ 56A, 10V	4V @ 250µA	130 nC @ 20 V	±20V	2000 pF @ 25 V	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Obsolete
PHP45NQ10T,127	NXP Semiconductors	100 V	47A (Tc)	25mOhm @ 25A, 10V	4V @ 1mA	61 nC @ 10 V	±20V	2600 pF @ 25 V	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Active
PSMN017-80PS,127	Nexperia USA Inc.	80 V	50A (Tc)	17mOhm @ 10A, 10V	4V @ 1mA	26 nC @ 10 V	±20V	1573 pF @ 40 V	103W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Obsolete
PSMN027-100PS,127	Nexperia USA Inc.	100 V	37A (Tc)	26.8mOhm @ 15A, 10V	4V @ 1mA	30 nC @ 10 V	±20V	1624 pF @ 50 V	103W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Obsolete
STP40NF10L	STMicroelectronics	100 V	40A (Tc)	33mOhm @ 20A, 10V	2.5V @ 250µA	64 nC @ 5 V	±17V	2300 pF @ 25 V	150W (Tc)	175°C (TJ)	Through Hole	TO-220-3	ROHS3 Compliant	Active

Engineering Selection Recommendations

For regulated applications requiring RoHS compliance, select MOSFETs indicated as ROHS3 compliant, such as HUF75639P3-F102, PHP45NQ10T,127, PSMN017-80PS,127, PSMN027-100PS,127, and STP40NF10L. Active status substitutes, including PHP45NQ10T,127 and STP40NF10L, may offer enhanced long-term availability. Match package type and electrical specifications exactly as shown to ensure mechanical and electrical compatibility. Only use obsolete substitutes when required by inventory or compatibility mandates.

Frequently Asked Questions (FAQ)

Q1: How are substitute MOSFETs selected for the SPP47N10L?
Substitutes are selected strictly based on N-channel type, voltage rating (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), and mechanical package compatibility (TO-220-3).

Q2: Are all substitutes pin-to-pin compatible with the SPP47N10L?
All listed substitute MOSFETs use the TO-220-3 standard package suitable for through-hole mounting, ensuring direct mechanical compatibility.

Q3: Why is RoHS compliance an important criterion in substitution?
RoHS (Restriction of Hazardous Substances) compliance is necessary for use in regulated markets. Substitutes with ROHS3 compliant status are suitable for such applications.

Q4: What electrical parameters should be matched when choosing a substitute?
Drain to source voltage (Vdss), continuous drain current (Id), Rds On, gate charge (Qg), and gate threshold voltage (Vgs(th)) must align closely to maintain circuit function and thermal performance.

Q5: Does the product status (Active/Obsolete) affect substitute selection?
Active status substitutes are preferable for new designs and long-term availability, while obsolete substitutes are primarily used for legacy support.

Q6: What is the significance of input capacitance and power dissipation for substitution?
Matching input capacitance (Ciss) ensures similar switching characteristics. Power dissipation rating (W) affects reliability under load and must meet application requirements.

Q7: What mounting and package considerations exist for these MOSFETs?
The TO-220-3 or equivalent through-hole mounting package is essential for board installation and thermal management compatibility.

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