Equivalent & Substitute Parts for SPP47N10 N-Channel MOSFET

Part Overview

The SPP47N10 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 47A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and is part of the SIPMOS® series. The SPP47N10 is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating modern component availability and compliance requirements.

Substiute Parts

SPP47N10
Infineon TechnologiesIn Stock: 1492SPP47N10 Datasheet
SPP47N10
Current Part
IXTP44N10T
IXYSIn Stock: 2745IXTP44N10T Datasheet
IXTP44N10T
MFR Recommended
PSMN017-80PS,127
Nexperia USA Inc.In Stock: 6937PSMN017-80PS,127 Datasheet
PSMN017-80PS,127
MFR Recommended
PSMN027-100PS,127
Nexperia USA Inc.In Stock: 23088PSMN027-100PS,127 Datasheet
PSMN027-100PS,127
MFR Recommended
STP30NF10
STMicroelectronicsIn Stock: 70978STP30NF10 Datasheet
STP30NF10
MFR Recommended
STP40NF10
STMicroelectronicsIn Stock: 79663STP40NF10 Datasheet
STP40NF10
MFR Recommended
STP40NF10L
STMicroelectronicsIn Stock: 15535STP40NF10L Datasheet
STP40NF10L
MFR Recommended

Key Parameters

Parameter Value Unit Specification Condition
Drain-to-Source Voltage (Vdss) 100 V Maximum rating
Continuous Drain Current (Id) 47 A At Tc = 25°C
On-Resistance (Rds On Max) 33 mOhm At Id = 33A, Vgs = 10V
Gate Threshold Voltage (Vgs th Max) 4 V At Id = 2mA
Gate Charge (Qg Max) 105 nC At Vgs = 10V
Input Capacitance (Ciss Max) 2500 pF At Vds = 25V
Power Dissipation (Max) 175 W At Tc
Operating Temperature Range -55 to 175 °C Junction temperature (TJ)
Package Type TO-220-3 Through-hole
FET Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitution of the SPP47N10 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
  • Continuous Drain Current (Id): Must equal or exceed 47A at 25°C
  • On-Resistance (Rds On): Must not exceed 33mOhm at specified test conditions
  • Gate Threshold Voltage (Vgs th): Must not exceed 4V at specified test conditions
  • Package Type: Must be TO-220-3 through-hole configuration
  • FET Type: Must be N-Channel MOSFET technology
  • Operating Temperature Range: Must support -55°C to 175°C junction temperature

Secondary Compatibility Parameters:

  • Gate Charge (Qg): Lower values indicate faster switching; values up to 105nC are acceptable
  • Input Capacitance (Ciss): Lower values reduce gate drive requirements; values up to 2500pF are acceptable
  • Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped based on whether they meet all primary criteria. Parts that maintain voltage and current ratings while offering improved on-resistance, lower gate charge, or enhanced compliance status are classified as direct substitutes. Parts with reduced voltage or current ratings are classified as application-dependent substitutes requiring design verification.

Parameter Comparison

Parameter SPP47N10 (Main) IXTP44N10T PSMN017-80PS,127 PSMN027-100PS,127 STP30NF10 STP40NF10 STP40NF10L Unit
Manufacturer Infineon IXYS Nexperia Nexperia STMicroelectronics STMicroelectronics STMicroelectronics
Vdss (Max) 100 100 80 100 100 100 100 V
Id @ 25°C 47 44 50 37 35 50 40 A
Rds On (Max) 33 30 17 26.8 45 28 33 mOhm
Rds On Test Condition (Id, Vgs) 33A, 10V 22A, 10V 10A, 10V 15A, 10V 15A, 10V 25A, 10V 20A, 10V
Vgs th (Max) 4 4.5 4 4 4 4 2.5 V
Qg (Max) 105 33 26 30 55 62 64 nC
Ciss (Max) 2500 1262 1573 1624 1180 2180 2300 pF
Power Dissipation (Max) 175 130 103 103 115 150 150 W
Operating Temp Range -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 °C
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Obsolete Obsolete Active Active Active
RoHS Compliance Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 Direct Substitutes (Recommended for New Designs and Replacements):

STP40NF10 (STMicroelectronics) and STP40NF10L (STMicroelectronics) are the primary recommended substitutes. Both devices maintain the 100V Vdss rating and exceed the 47A continuous drain current requirement with 50A and 40A ratings respectively. STP40NF10 delivers superior on-resistance performance (28mOhm) compared to the SPP47N10 (33mOhm), enabling lower power dissipation in high-current applications. Both parts are Active status products with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The STripFET™ II technology platform provides enhanced switching characteristics suitable for modern power conversion applications.

Tier 2 Substitutes (Application-Dependent):

IXTP44N10T (IXYS) maintains 100V Vdss and 44A continuous drain current, meeting the primary voltage and current requirements. The device exhibits superior on-resistance (30mOhm) and significantly reduced gate charge (33nC versus 105nC), resulting in lower gate drive power and faster switching transitions. Active product status and ROHS3 compliance support long-term design continuity. The Trench technology platform offers improved switching performance for high-frequency applications.

PSMN027-100PS,127 (Nexperia) maintains 100V Vdss but provides only 37A continuous drain current, falling below the SPP47N10 specification. This part is suitable only for applications where the actual operating current does not exceed 37A. Superior on-resistance (26.8mOhm) and reduced gate charge (30nC) provide efficiency benefits. ROHS3 compliance is supported.

Tier 3 Substitutes (Limited Compatibility):

STP30NF10 (STMicroelectronics) maintains 100V Vdss but provides only 35A continuous drain current, below the SPP47N10 specification. Higher on-resistance (45mOhm) results in increased power dissipation. Suitable only for applications with reduced current requirements. Active status and ROHS3 compliance are supported.

PSMN017-80PS,127 (Nexperia) reduces Vdss to 80V, limiting application to circuits with maximum operating voltages below 80V. The 50A continuous drain current exceeds the SPP47N10 specification, but the reduced voltage rating restricts compatibility. Superior on-resistance (17mOhm) and reduced gate charge (26nC) provide efficiency benefits within voltage-limited applications. ROHS3 compliance is supported.

Product Status and Compliance Considerations:

All recommended substitute parts are Active status products with ROHS3 compliance, ensuring regulatory alignment and long-term supply chain stability. The SPP47N10 is classified as Obsolete and RoHS non-compliant, making transition to compliant alternatives necessary for new production and regulatory adherence. All substitute parts maintain the -55°C to 175°C operating temperature range, supporting thermal design requirements.

Frequently Asked Questions (FAQ)

Q1: Can the IXTP44N10T directly replace the SPP47N10 in existing designs?

The IXTP44N10T maintains the 100V Vdss rating and provides 44A continuous drain current, which is within 94% of the SPP47N10's 47A specification. The superior on-resistance (30mOhm versus 33mOhm) and significantly reduced gate charge (33nC versus 105nC) provide performance improvements. Direct substitution is supported for applications where the actual operating current does not exceed 44A. Gate drive circuits designed for the SPP47N10 will operate with the IXTP44N10T, though the reduced gate charge may require adjustment of gate drive timing parameters for optimal performance.

Q2: Why is the PSMN017-80PS,127 listed as a substitute if it has only 80V Vdss?

The PSMN017-80PS,127 is classified as an application-dependent substitute suitable only for circuits with maximum operating voltages not exceeding 80V. While this represents a voltage derating compared to the SPP47N10's 100V rating, the part provides superior on-resistance (17mOhm) and reduced gate charge (26nC) for applications within this voltage constraint. This part is included in the substitute list because it appears in the SPP47N10's documented substitute chain, indicating historical cross-reference relationships.

Q3: What is the significance of the reduced gate charge in substitute parts like IXTP44N10T and PSMN017-80PS,127?

Gate charge (Qg) directly impacts gate drive power consumption and switching speed. The SPP47N10 requires 105nC of gate charge at 10V, while the IXTP44N10T requires only 33nC. Lower gate charge reduces the energy required to switch the device on and off, decreasing gate driver power dissipation and enabling faster switching transitions. This is particularly beneficial in high-frequency switching applications such as power supplies and motor drives. Gate drive circuits must be verified to deliver sufficient current to charge the gate within the required switching time window.

Q4: Are all substitute parts available in the same TO-220-3 package?

All substitute parts listed are packaged in TO-220-3 through-hole configuration, maintaining mechanical and thermal interface compatibility with the SPP47N10. This ensures direct board-level substitution without PCB layout modifications. Thermal performance varies based on power dissipation ratings: the SPP47N10 is rated for 175W, while substitute parts range from 103W to 150W. Thermal design verification is required for applications operating at maximum power dissipation levels.

Q5: Which substitute part is recommended for new product designs?

STP40NF10 is the recommended substitute for new designs. This part maintains the 100V Vdss rating, exceeds the 47A continuous drain current requirement with a 50A rating, and delivers superior on-resistance performance (28mOhm). The device is Active status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The STripFET™ II technology platform provides proven performance in modern power conversion applications. Inventory availability (79,600 pieces) supports production continuity.

Q6: Can the STP30NF10 be used as a substitute if the application current is below 35A?

The STP30NF10 maintains the 100V Vdss rating and provides 35A continuous drain current. For applications where the actual operating current does not exceed 35A, this part is electrically compatible. However, the higher on-resistance (45mOhm versus 33mOhm) results in increased power dissipation compared to the SPP47N10. Thermal design verification is required to confirm that the 115W power dissipation rating is sufficient for the application. The part is Active status with ROHS3 compliance.

Q7: What compliance advantages do the substitute parts offer over the SPP47N10?

All substitute parts are ROHS3 compliant, whereas the SPP47N10 is RoHS non-compliant. ROHS3 compliance is mandatory for products sold in the European Union and increasingly required by global customers. All substitute parts maintain REACH Unaffected status and EAR99 export classification, matching the SPP47N10's regulatory profile. Moisture Sensitivity Level (MSL) 1 (Unlimited) is maintained across all parts, indicating no moisture-related handling restrictions.

Q8: How do the on-resistance specifications differ between parts, and what is the practical impact?

On-resistance (Rds On) determines the voltage drop across the device during conduction, directly affecting power dissipation. The SPP47N10 specifies 33mOhm at 33A and 10V gate voltage. Substitute parts vary: IXTP44N10T (30mOhm at 22A), PSMN017-80PS,127 (17mOhm at 10A), PSMN027-100PS,127 (26.8mOhm at 15A), STP30NF10 (45mOhm at 15A), STP40NF10 (28mOhm at 25A), and STP40NF10L (33mOhm at 20A). Lower on-resistance reduces conduction losses, improving efficiency and reducing thermal management requirements. On-resistance values are specified at different test currents, requiring application-specific analysis to determine actual performance impact.

Q9: Are there any gate voltage (Vgs) differences that affect gate drive circuit design?

The SPP47N10 specifies maximum gate voltage (Vgs Max) of ±20V. Most substitute parts maintain this specification, except STP40NF10L which specifies ±17V. Gate drive circuits must be designed to operate within these voltage limits. The gate threshold voltage (Vgs th) varies slightly: SPP47N10 (4V), IXTP44N10T (4.5V), and STP40NF10L (2.5V). Lower threshold voltages enable operation with lower gate drive voltages, reducing gate driver power requirements. Gate drive circuits should be verified to deliver sufficient voltage margin above the threshold voltage for reliable switching.

Q10: What inventory considerations should be evaluated when selecting a substitute?

Current inventory levels vary significantly: STP40NF10 (79,600 pieces), STP30NF10 (70,887 pieces), PSMN027-100PS,127 (23,005 pieces), IXTP44N10T (2,700 pieces), STP40NF10L (15,465 pieces), and PSMN017-80PS,127 (6,921 pieces). For production continuity and cost optimization, parts with higher inventory levels provide greater supply security. STP40NF10 and STP30NF10 offer the highest inventory availability, supporting large-volume production requirements. For low-volume applications or prototyping, all listed parts maintain sufficient inventory for immediate availability.

Request Quote (Ships tomorrow)