SPP24N60C3HKSA1 Equivalent & Substitute Parts

Part Overview

The SPP24N60C3HKSA1 is an N-Channel 650V 24.3A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-220-3 package for through-hole mounting. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. The part delivers 240W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Substiute Parts

SPP24N60C3HKSA1
Infineon TechnologiesIn Stock: 1064SPP24N60C3HKSA1 Datasheet
SPP24N60C3HKSA1
Current Part
SPP24N60C3XKSA1
Infineon TechnologiesIn Stock: 1010SPP24N60C3XKSA1 Datasheet
SPP24N60C3XKSA1
Direct
SPW24N60C3FKSA1
Infineon TechnologiesIn Stock: 2311SPW24N60C3FKSA1 Datasheet
SPW24N60C3FKSA1
Parametric Equivalent
AOT25S65L
Alpha & Omega Semiconductor Inc.In Stock: 1589AOT25S65L Datasheet
AOT25S65L
MFR Recommended
FCP190N65F
onsemiIn Stock: 15950FCP190N65F Datasheet
FCP190N65F
MFR Recommended
IRF830A
Vishay SiliconixIn Stock: 2365IRF830A Datasheet
IRF830A
MFR Recommended
IRF830APBF
Vishay SiliconixIn Stock: 1458IRF830APBF Datasheet
IRF830APBF
MFR Recommended
IRFBC30APBF
Vishay SiliconixIn Stock: 2118IRFBC30APBF Datasheet
IRFBC30APBF
MFR Recommended
PJMP130N65EC_T0_00001
Panjit International Inc.In Stock: 3023PJMP130N65EC_T0_00001 Datasheet
PJMP130N65EC_T0_00001
MFR Recommended
STP21N65M5
STMicroelectronicsIn Stock: 17607STP21N65M5 Datasheet
STP21N65M5
MFR Recommended
STP24NM60N
STMicroelectronicsIn Stock: 1303STP24NM60N Datasheet
STP24NM60N
MFR Recommended
STP26NM60N
STMicroelectronicsIn Stock: 55189STP26NM60N Datasheet
STP26NM60N
MFR Recommended
STP28N60M2
STMicroelectronicsIn Stock: 24755STP28N60M2 Datasheet
STP28N60M2
MFR Recommended
TK20E60W,S1VX
Toshiba Semiconductor and StorageIn Stock: 939TK20E60W,S1VX Datasheet
TK20E60W,S1VX
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 24.3 A (Tc)
On-State Resistance (Rds On Max) @ 15.4A, 10V 160 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1.2mA 3.9 V
Gate Charge (Qg Max) @ 10V 135 nC
Input Capacitance (Ciss Max) @ 25V 3000 pF
Power Dissipation (Max) 240 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole
Gate Voltage (Vgs Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the SPP24N60C3HKSA1 is determined by strict alignment of electrical and mechanical parameters. The critical substitution criteria are:

Primary Electrical Parameters:

  • Drain to Source Voltage (Vdss): 650V minimum
  • Continuous Drain Current (Id): 24.3A or greater
  • On-State Resistance (Rds On): 160mOhm or lower at specified gate voltage
  • Power Dissipation: 240W or greater
  • Operating Temperature Range: -55°C to 150°C minimum

Mechanical Parameters:

  • Package Type: TO-220-3 or TO-247-3 (pin-compatible alternatives)
  • Mounting Type: Through Hole

Substitution Categories:

Direct Equivalent (Same Package, Same Electrical Performance): SPP24N60C3XKSA1 maintains identical electrical specifications with active product status and improved packaging (Tube vs. unspecified).

Parametric Equivalent (Different Package, Equivalent Electrical Performance): SPW24N60C3FKSA1 provides identical electrical parameters in TO-247-3 package, suitable for applications where package footprint permits substitution.

Cross-Manufacturer Equivalents (Matching or Exceeding Specifications): AOT25S65L, FCP190N65F, PJMP130N65EC_T0_00001, and STP21N65M5 meet or exceed the core electrical requirements (Vdss ≥ 650V, Id ≥ 24.3A) with active product status.

Limited Substitutes (Reduced Specifications): IRF830APBF and IRFBC30APBF operate at lower voltage ratings (500V and 600V respectively) and reduced current ratings, suitable only for applications with relaxed voltage and current requirements.


Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Qg Max (nC) Power Diss. (W) Package Status
SPP24N60C3HKSA1 Infineon 650 24.3 160 135 240 TO-220-3 Obsolete
SPP24N60C3XKSA1 Infineon 650 24.3 160 135 240 TO-220-3 Active
SPW24N60C3FKSA1 Infineon 650 24.3 160 135 240 TO-247-3 Active
AOT25S65L Alpha & Omega 650 25 190 26.4 357 TO-220-3 Active
FCP190N65F onsemi 650 20.6 190 78 208 TO-220-3 Not For New Designs
IRF830APBF Vishay Siliconix 500 5 1400 24 74 TO-220-3 Active
IRFBC30APBF Vishay Siliconix 600 3.6 2200 23 74 TO-220-3 Active
PJMP130N65EC_T0_00001 Panjit International 650 29 130 51 235 TO-220-3 Active
STP21N65M5 STMicroelectronics 650 17 190 50 125 TO-220-3 Active
STP24NM60N STMicroelectronics 600 17 190 46 125 TO-220-3 Active

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended):

SPP24N60C3XKSA1 is the primary substitute for SPP24N60C3HKSA1. Both parts are manufactured by Infineon Technologies within the CoolMOS™ series and maintain identical electrical specifications. SPP24N60C3XKSA1 carries active product status with ROHS3 compliance and Tube packaging, providing superior supply chain availability and regulatory alignment compared to the obsolete original part.

Tier 2 - Package Alternative (Conditional):

SPW24N60C3FKSA1 provides identical electrical performance to the original part but in TO-247-3 package format. This substitute is applicable only when PCB layout and thermal management design accommodate the larger TO-247-3 footprint. The part maintains active status and ROHS3 compliance.

Tier 3 - Cross-Manufacturer Equivalents (Application-Dependent):

PJMP130N65EC_T0_00001 (Panjit International) exceeds the original specifications with 29A continuous drain current and 130mOhm on-state resistance, delivering superior performance in high-current applications. Active product status and ROHS3 compliance support long-term availability.

AOT25S65L (Alpha & Omega Semiconductor) meets voltage and current requirements with 25A continuous drain current. The part exhibits higher power dissipation capability (357W) and lower gate charge (26.4nC), beneficial for switching frequency optimization. Active status and ROHS3 compliance are confirmed.

Tier 4 - Reduced Specification Substitutes (Limited Scope):

FCP190N65F (onsemi) maintains 650V voltage rating but delivers reduced continuous drain current (20.6A) and lower power dissipation (208W). Product status is "Not For New Designs," limiting suitability to legacy system maintenance only.

STP21N65M5 (STMicroelectronics) operates at 650V with 17A continuous drain current and 125W power dissipation, representing significant performance reduction. Applicable only to applications with relaxed current and power requirements.

Not Recommended:

IRF830APBF and IRFBC30APBF operate at 500V and 600V respectively with drain currents of 5A and 3.6A. These parts are unsuitable for applications requiring the original 650V/24.3A specification and represent fundamental design compromises.

STP24NM60N operates at 600V (below the 650V requirement) with 17A continuous drain current, introducing voltage margin reduction unsuitable for 650V-rated circuit designs.


Frequently Asked Questions (FAQ)

Q1: Can SPP24N60C3XKSA1 be used as a direct drop-in replacement for SPP24N60C3HKSA1?

Yes. SPP24N60C3XKSA1 is the direct equivalent, maintaining identical electrical specifications (650V, 24.3A, 160mOhm Rds On, 240W power dissipation) and TO-220-3 package format. The primary difference is product status (Active vs. Obsolete) and packaging format (Tube vs. unspecified). No circuit modifications are required.

Q2: What is the difference between SPW24N60C3FKSA1 and SPP24N60C3XKSA1?

Both parts are Infineon CoolMOS™ devices with identical electrical specifications. The distinction is package type: SPW24N60C3FKSA1 uses TO-247-3 (larger footprint, improved thermal performance), while SPP24N60C3XKSA1 uses TO-220-3 (standard footprint). SPW24N60C3FKSA1 substitution requires PCB layout verification to confirm TO-247-3 compatibility.

Q3: Why are IRF830APBF and IRFBC30APBF listed as substitutes if they have lower ratings?

These parts are included in the provided substitute list but do not meet the original specification requirements. IRF830APBF operates at 500V/5A and IRFBC30APBF at 600V/3.6A, both significantly below the 650V/24.3A requirement. These parts are unsuitable for direct substitution and should be considered only if application requirements have been fundamentally revised to accept reduced voltage and current ratings.

Q4: Is PJMP130N65EC_T0_00001 a superior substitute to SPP24N60C3XKSA1?

PJMP130N65EC_T0_00001 exceeds the original specification in continuous drain current (29A vs. 24.3A) and on-state resistance (130mOhm vs. 160mOhm), delivering improved performance. However, it is a cross-manufacturer part (Panjit International vs. Infineon). Selection should be based on application requirements, supply chain preferences, and thermal design considerations. Both parts maintain active status and ROHS3 compliance.

Q5: Can STP21N65M5 be used in place of SPP24N60C3HKSA1?

STP21N65M5 meets the 650V voltage requirement but provides only 17A continuous drain current versus the original 24.3A specification. This represents a 30% current reduction and is unsuitable for applications requiring full 24.3A capability. Substitution is permissible only if circuit design analysis confirms operation within the reduced 17A current envelope.

Q6: What compliance certifications should be verified when selecting a substitute?

For new designs, ROHS3 compliance is mandatory. SPP24N60C3XKSA1, SPW24N60C3FKSA1, AOT25S65L, PJMP130N65EC_T0_00001, and STP21N65M5 all carry ROHS3 certification. FCP190N65F carries ROHS3 compliance but is marked "Not For New Designs." IRF830APBF and IRFBC30APBF carry ROHS3 compliance with REACH Affected status. Verify REACH compliance requirements for your specific application and region.

Q7: How does gate charge (Qg) affect substitute selection?

Gate charge influences switching speed and driver circuit requirements. The original SPP24N60C3HKSA1 specifies 135nC gate charge. AOT25S65L (26.4nC) and PJMP130N65EC_T0_00001 (51nC) exhibit significantly lower gate charge, enabling faster switching and reduced driver power dissipation. Higher gate charge parts (FCP190N65F at 78nC) may require driver circuit optimization. Verify gate driver capability before substitution.

Q8: What thermal considerations apply when substituting TO-220-3 with TO-247-3 package?

TO-247-3 package (SPW24N60C3FKSA1) provides improved thermal performance through larger die attachment area and enhanced heat spreading. If thermal design margin is critical, TO-247-3 substitution may improve reliability. However, PCB layout must accommodate the larger footprint (approximately 10mm x 15mm vs. 10mm x 13mm for TO-220-3). Verify heatsink mounting compatibility and thermal interface material requirements.

Q9: Are there supply chain advantages to selecting cross-manufacturer substitutes?

Yes. Cross-manufacturer alternatives such as AOT25S65L (Alpha & Omega), PJMP130N65EC_T0_00001 (Panjit), and STP21N65M5 (STMicroelectronics) may offer improved availability compared to Infineon-specific parts during supply constraints. However, design qualification and production testing are required for first-time cross-manufacturer substitution. Maintain Infineon parts as primary specification for consistency.

Q10: Can multiple substitute parts be qualified for a single design?

Yes. Qualifying multiple substitutes (e.g., SPP24N60C3XKSA1 as primary, AOT25S65L as secondary, PJMP130N65EC_T0_00001 as tertiary) provides supply chain flexibility and mitigates single-source risk. All qualified parts must pass identical electrical, thermal, and functional testing. Document substitution hierarchy and switching criteria in design documentation and procurement specifications.

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