SPP15N60CFDXKSA1 Equivalent & Substitute Parts

Part Overview

The SPP15N60CFDXKSA1 is an N-Channel 600 V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 13.4 A continuous drain current at 25°C with a maximum power dissipation of 156 W. The component is packaged in a Through Hole PG-TO220-3-1 configuration and is designated as Not For New Designs, indicating legacy product status. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Substiute Parts

SPP15N60CFDXKSA1

Infineon TechnologiesIn Stock: 1118SPP15N60CFDXKSA1 Datasheet

Current PartRFQ

FCPF11N60F

onsemiIn Stock: 5845FCPF11N60F Datasheet

MFR RecommendedRFQ

IXTP12N70X2M

IXYSIn Stock: 789IXTP12N70X2M Datasheet

MFR RecommendedRFQ

STP13NM60N

STMicroelectronicsIn Stock: 9053STP13NM60N Datasheet

MFR RecommendedRFQ

STP16N65M5

STMicroelectronicsIn Stock: 1332STP16N65M5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the SPP15N60CFDXKSA1 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must be ≥ 600 V to maintain voltage rating compatibility
• Current - Continuous Drain (Id) @ 25°C: Must be ≥ 13.4 A to support the original current specification
• Rds On (Max): Lower or equal values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Operating Temperature Range: Must encompass -55°C ~ 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package / Case: TO-220-3 or compatible TO-220 variants acceptable
• Vgs (Max): Must accommodate ±20 V gate voltage specification

Regulatory Compliance:

• RoHS3 Compliance required
• REACH Unaffected status required

The four substitute parts listed below meet these criteria with varying trade-offs in power dissipation, gate charge, and voltage ratings.

Parameter Comparison

Engineering Selection Recommendations

STP13NM60N (STMicroelectronics MDmesh™ II Series)

The STP13NM60N maintains the 600 V Vdss rating and provides 11 A continuous drain current. This part is Active status, ensuring long-term availability. The 360 mOhm Rds On and 30 nC gate charge represent significant improvements in switching efficiency compared to the legacy SPP15N60CFDXKSA1. Power dissipation is rated at 90 W, which is lower than the original part. This substitute is suitable for applications where the 11 A current rating is sufficient and improved efficiency is beneficial.

FCPF11N60F (onsemi SuperFET™ Series)

The FCPF11N60F maintains 600 V Vdss and 11 A continuous drain current specifications. This part carries Not For New Designs status, similar to the original. The 380 mOhm Rds On and 52 nC gate charge are comparable to the original device. Power dissipation is 36 W, indicating lower thermal load. The TO-220F-3 package variant provides full pack isolation. This substitute is appropriate for direct replacement in existing designs where current rating reduction is acceptable.

STP16N65M5 (STMicroelectronics MDmesh™ V Series)

The STP16N65M5 offers 650 V Vdss, exceeding the original 600 V specification, with 12 A continuous drain current. This part is Active status with long-term supply assurance. The 299 mOhm Rds On represents the lowest on-resistance among all substitutes, providing superior efficiency. Gate charge is 45 nC. Power dissipation is 90 W. This substitute is optimal for applications requiring higher voltage margin and improved performance characteristics.

IXTP12N70X2M (IXYS Ultra X2 Series)

The IXTP12N70X2M provides the highest Vdss rating at 700 V with 12 A continuous drain current. This part is Active status. The 300 mOhm Rds On and exceptionally low 19 nC gate charge deliver superior switching performance and minimal switching losses. Power dissipation is 40 W. The isolated tab package variant provides enhanced thermal and electrical isolation. This substitute is suitable for applications requiring maximum voltage headroom and lowest switching losses.

Frequently Asked Questions (FAQ)

Q: Can the SPP15N60CFDXKSA1 be directly replaced with any of these substitutes?

A: Direct replacement depends on application-specific current and power dissipation requirements. All substitutes maintain the 600 V minimum voltage rating and Through Hole TO-220 package compatibility. However, the SPP15N60CFDXKSA1 is rated for 13.4 A continuous drain current, while all substitutes are rated at 11-12 A. Applications requiring the full 13.4 A specification cannot use these substitutes without circuit redesign.

Q: What is the significance of the gate charge (Qg) differences?

A: Gate charge directly affects switching speed and switching losses. The IXTP12N70X2M has the lowest gate charge at 19 nC, resulting in faster switching transitions and reduced power dissipation during switching events. The original SPP15N60CFDXKSA1 has 84 nC, indicating slower switching characteristics. Lower gate charge substitutes improve overall circuit efficiency but may require gate driver optimization.

Q: Are all substitutes RoHS3 compliant?

A: Yes, all four substitute parts listed are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements.

Q: What is the difference between TO-220-3 and TO-220F-3 packages?

A: The TO-220F-3 (full pack) variant used in the FCPF11N60F provides complete isolation of the tab from the drain connection, offering improved electrical isolation. The standard TO-220-3 package has the tab connected to the drain. Both are mechanically compatible with standard TO-220 mounting hardware.

Q: Which substitute offers the best thermal performance?

A: The IXTP12N70X2M offers the lowest power dissipation at 40 W and the lowest gate charge at 19 nC, resulting in minimal switching losses. The STP16N65M5 and STP13NM60N both provide 90 W power dissipation ratings. The FCPF11N60F has the lowest power dissipation at 36 W but carries legacy product status.

Q: Can substitutes with higher Vdss ratings be used in 600 V applications?

A: Yes. The STP16N65M5 (650 V) and IXTP12N70X2M (700 V) can be used in 600 V applications. Higher voltage ratings provide additional safety margin and do not negatively impact circuit operation at lower voltages. However, higher voltage devices typically have higher on-resistance at equivalent current levels, which may affect efficiency.

Q: What does "Active" product status mean compared to "Not For New Designs"?

A: Active status indicates the manufacturer continues production and supports long-term availability. Not For New Designs indicates the product is in end-of-life phase with limited future support. For new designs, Active status parts (STP13NM60N, STP16N65M5, IXTP12N70X2M) are preferred. For legacy system maintenance, Not For New Designs parts (FCPF11N60F) may be acceptable.

Q: Are there thermal management considerations when substituting?

A: Yes. The original SPP15N60CFDXKSA1 is rated for 156 W power dissipation, significantly higher than all substitutes. Applications designed for the original part's thermal characteristics may require heatsink redesign when using lower power-rated substitutes, as thermal management requirements will be reduced.