SPP07N60S5 Equivalent & Substitute Parts

Part Overview

The SPP07N60S5 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 650V drain-to-source voltage with 7.3A continuous drain current at 25°C. This device is packaged in TO-220-3 through-hole configuration and belongs to the CoolMOS™ series. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status or improved availability.

Key Parameters

Parameter	SPP07N60S5	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Current - Continuous Drain (Id) @ 25°C	7.3	A
Rds On (Max) @ Id, Vgs	600	mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs	35	nC @ 10V
Power Dissipation (Max)	83	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the SPP07N60S5 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 650V
Continuous Drain Current (Id) must equal or exceed 7.3A at 25°C
On-state resistance (Rds On) must not exceed the original specification to maintain thermal performance
Gate charge (Qg) should remain within acceptable limits to preserve gate drive circuit compatibility
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be TO-220-3 through-hole configuration
Mounting type must be through-hole
Pin configuration must match TO-220-3 standard

Regulatory and Compliance Criteria:

REACH compliance status
RoHS compliance status where applicable
ECCN classification

The substitute parts listed below meet these criteria with Vdss ratings of 600V or higher, drain currents equal to or exceeding the original specification, and identical or superior thermal performance characteristics. All substitute parts maintain TO-220-3 packaging and through-hole mounting compatibility.

Parameter Comparison

Parameter	SPP07N60S5	FCP11N60F	STP10N60M2	STP10NK60Z	STP10NM60N	STP13NK60Z	STP9N60M2	Unit
Manufacturer	Infineon	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	650	600	600	600	600	600	600	V
Id @ 25°C	7.3	11	7.5	10	10	13	5.5	A
Rds On (Max)	600	380	600	750	550	550	780	mOhm
Gate Charge (Qg)	35	52	13.5	70	19	92	10	nC @ 10V
Power Dissipation (Max)	83	125	85	115	70	150	60	W (Tc)
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active	Active	—
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

For Direct Replacement with Voltage Margin: STP10NM60N and STP10N60M2 provide the closest electrical match to the SPP07N60S5 with 600V Vdss ratings, 7.5A to 10A drain current capabilities, and comparable on-state resistance. Both parts are manufactured by STMicroelectronics with active product status and ROHS3 compliance. STP10NM60N offers superior thermal performance at 70W maximum power dissipation and lower gate charge (19 nC), making it suitable for applications requiring efficient gate drive circuits.

For Higher Current Capability: STP13NK60Z and FCP11N60F support higher drain currents (13A and 11A respectively) while maintaining 600V Vdss ratings. These parts accommodate designs requiring increased current headroom. STP13NK60Z is active and ROHS3 compliant. FCP11N60F carries "Not For New Designs" status, limiting its use to legacy system support.

For Lower Power Dissipation Applications: STP9N60M2 operates at 5.5A continuous drain current with 60W maximum power dissipation, suitable for lower-power circuit implementations. This part features the lowest gate charge (10 nC) among the substitute options.

Voltage Derating Consideration: All substitute parts operate at 600V Vdss compared to the original 650V specification. Applications operating near maximum voltage ratings require verification that the 50V reduction does not compromise system safety margins.

Compliance and Availability: All active-status substitute parts (STP10NM60N, STP10N60M2, STP10NK60Z, STP13NK60Z, STP9N60M2) are ROHS3 compliant and REACH unaffected. Current inventory levels range from 1,296 to 18,823 units, providing procurement continuity.

Frequently Asked Questions (FAQ)

Q: Can STP10NM60N directly replace SPP07N60S5 in existing designs? A: STP10NM60N is mechanically and electrically compatible with SPP07N60S5. Both are N-Channel MOSFETs in TO-220-3 packages with -55°C to 150°C operating ranges. The primary difference is Vdss rating (600V vs. 650V). Designs operating below 600V are fully compatible. Designs requiring 650V operation require verification that the 50V reduction maintains adequate safety margins.

Q: What is the difference between STP10NM60N and STP10N60M2? A: Both parts are STMicroelectronics N-Channel MOSFETs with 600V Vdss and 7.5A to 10A drain current ratings in TO-220-3 packages. STP10NM60N (MDmesh™ II series) offers lower power dissipation (70W vs. 85W) and lower gate charge (19 nC vs. 13.5 nC). STP10N60M2 (MDmesh™ II Plus series) provides slightly higher current capability at 7.5A. Selection depends on thermal and gate drive circuit requirements.

Q: Why do substitute parts have lower Vdss ratings (600V vs. 650V)? A: The substitute parts listed represent the closest electrical and mechanical matches available with active product status. The 600V Vdss rating is standard across modern N-Channel MOSFET offerings in this current class. Applications must verify that operating voltages remain below 600V or implement additional circuit protection.

Q: Are all substitute parts ROHS3 compliant? A: All active-status substitute parts (STP10NM60N, STP10N60M2, STP10NK60Z, STP13NK60Z, STP9N60M2) are ROHS3 compliant. FCP11N60F compliance status is not specified in available documentation.

Q: Which substitute part has the lowest gate charge? A: STP9N60M2 has the lowest gate charge at 10 nC @ 10V, followed by STP10N60M2 at 13.5 nC. Lower gate charge reduces gate drive circuit power consumption and switching losses.

Q: Can I use FCP11N60F for new designs? A: FCP11N60F carries "Not For New Designs" product status. This part is suitable only for legacy system support and maintenance applications. New designs should use active-status alternatives such as STP10NM60N, STP10N60M2, STP10NK60Z, STP13NK60Z, or STP9N60M2.

Q: What is the impact of higher drain current ratings in substitute parts? A: Substitute parts with higher drain current ratings (STP13NK60Z at 13A, FCP11N60F at 11A) provide additional current headroom for the same package. These parts are suitable for designs requiring higher current capability or for applications where future current scaling is anticipated. Lower-current alternatives (STP9N60M2 at 5.5A) are appropriate for current-limited applications.

Q: Are the TO-220-3 packages identical across all parts? A: All listed parts use TO-220-3 through-hole packages with identical pin configurations. Physical mounting and PCB layout compatibility is maintained across all substitutes.

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